2SA1667/1668 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) Application: TV Vertical Output, Audio Output Driver and General Purpose nAbsolute maximum ratings (Ta=25°C) nElectrical Characteristics (Ta=25°C) External DimensionsFM20 (TO220F) Ratings Ratings Symbol Unit Symbol Conditions Unit VCBO 2S–A1156067 2S–A2106068 V ICBO 2–S10Am16ax67 2–S1A0m16ax68 mA 10.1±0.2 4.0±0.2 4.22±.80.2 c0.5 VVIICBCEBEOO –150 –––621 –200 AAVV IVhEF(BBEOR)CEO VCE=I–CV1=E0B–V=2, 5–I6CmV=VCA–B0=.7A ––115500m–in1600mmai–n–x220000min mVVA 16.9±0.3 8.4±0.2 ba 0.8±0.2ø3.3±0.2 PC 25(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–0.07A –1.0max V 3.9±0.2 TTjstg –55 1to5 0+150 °°CC fCTOB VVCCEB==––1120VV,, fI=E=1M0.H2Az 2600ttyypp MpHFz 13.0min 11..3355±±00..1155 nTypical Switching Characteristics (Common Emitter) 2.54 2.504.85+-00..120.45+-00..12 2.4±0.2 2.2±0.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (Ω) (A) (V) (V) (mA) (mA) (ms) (ms) (ms) a. Part No. –20 20 –1 –10 5 –100 100 0.4typ 1.5typ 0.5typ B C E b. Lot No. IC–VCE Characteristics (Typical) VCE(sat)–IB Characteristics (Typical) IC–VBE Temperature Characteristics (Typical) –2.0 –50m A (V)CE(sat) –3 –2 (VCE=–10V) V –1.6 age A)–1.6 Collector Current I(A)C–––001...842 IB=–5mA/Step ector-Emitter Saturation Volt ––21 IC=–2A Collector Current I(C–––100...284 125˚C (Case Temp) 25˚C (Case Temp)–30˚C (Case Temp) Coll –0.5A –1A 00 –2 –4 –6 –8 –10 0–2 –10 –100 –1000 00 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 Collector-Emitter Voltage VCE(V) Base Current IB(mA) Base-Emittor Voltage VBE(V) hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) q j-a–t Characteristics (VCE=–10V) (VCE=–10V) W) 400 400 C/ 5 DC Current Gain hFE14000 Typ DC Current Gain hFE13000 –1232505˚˚˚CCC qTransient Thermal Resistance (˚j-a0.15 –0.01 –0.1 –1 –2 –0.01 –0.1 –1 –2 1 10 100 1000 Collector Current IC(A) Collector Current IC(A) Time t(ms) fT–IE Characteristics (Typical) Safe Operating Area (Single Pulse) Pc–Ta Derating 50 (VCE=–12V) –5 25 Natural Cooling Cut-off Frequency f(MH)TZ 12340000 Typ Collector Current I(A)C–0–.11 WN12..ai22tthuSSorAAau11lt C66H66oe78oaltisnignk 20mDsC5ms1ms aximum Power Dissipation P(W)C 2100 1155000x0x5x11005x002xx22 With Infinite heHatesSainiltikscioninnke :m AGmluremaisneum M Without Heatsink 1 2 2 00.01 0.1 1 2 –0.01–1 –10 –100 –300 00 25 50 75 100 125 150 Emitter Current IE(A) Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(˚C) 25