Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

2PD2150 20 V, 3 A NPN low V (BISS) transistor CEsat Rev. 02 — 2 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a medium power CEsat SOT89(SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB1424. 1.2 Features n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n High efficiency due to less heat generation n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n DC-to-DC conversion n MOSFET gate driving n Motor control n Charging circuits n Power switches (e.g. motors, fans) n Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 3 A C I peak collector current single pulse; - - 5 A CM t £ 1ms p V collector-emitter I =2A; I =0.1A [1] - 0.2 0.5 V CEsat C B saturation voltage [1] Pulse test: t £ 300m s;d£ 0.02. p

2PD2150 NXP Semiconductors 20 V, 3 A NPN low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 emitter 2 2 collector 3 base 3 1 3 2 1 sym042 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2PD2150 SC-62 plastic surface-mounted package; collector pad for SOT89 good heat transfer; 3leads 4. Marking Table 4. Marking codes Type number Marking code 2PD2150 M2 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 40 V CBO V collector-emitter voltage open base - 20 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 3 A C I peak collector current single pulse; - 5 A CM t £ 1ms p P total power dissipation T £ 25(cid:176) C [1] - 0.5 W tot amb [2] - 2 W T junction temperature - 150 (cid:176) C j T ambient temperature - 65 +150 (cid:176) C amb T storage temperature - 65 +150 (cid:176) C stg [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on a ceramicPCB, Al O , standard footprint. 2 3 2PD2150_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 January 2007 2 of 13

2PD2150 NXP Semiconductors 20 V, 3 A NPN low V (BISS) transistor CEsat 006aaa943 2.4 Ptot (1) (W) 1.6 0.8 (2) 0 - 75 - 25 0 25 75 125 175 Tamb ((cid:176)C) (1) CeramicPCB, Al O , standard footprint 2 3 (2) FR4PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air [1] - - 250 K/W th(j-a) junction to ambient [2] - - 62 K/W [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on a ceramicPCB, Al O , standard footprint. 2 3 2PD2150_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 January 2007 3 of 13

2PD2150 NXP Semiconductors 20 V, 3 A NPN low V (BISS) transistor CEsat 103 006aaa944 duty cycle = Zth(j-a) (K/W) 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 1 0 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 103 tp (s) FR4PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 006aaa945 duty cycle = Zth(j-a) 1 0.75 (K/W) 0.5 0.33 10 0.2 0.1 0.05 0.02 1 0.01 0 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 103 tp (s) CeramicPCB, Al O , standard footprint 2 3 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2PD2150_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 January 2007 4 of 13

2PD2150 NXP Semiconductors 20 V, 3 A NPN low V (BISS) transistor CEsat 7. Characteristics Table 7. Characteristics T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V =30V; I =0A - - 0.1 m A CBO CB E current I emitter-base cut-off V =5V; I =0A - - 0.1 m A EBO EB C current h DC current gain V =2V; I =0.1A 180 - 390 FE CE C V collector-emitter I =2A; I =0.1A [1] - 0.2 0.5 V CEsat C B saturation voltage f transition frequency V =2V; I =- 0.5A; - 220 - MHz T CE E f=100MHz C common-base input V =5V; I =i =0A; - 180 - pF ib EB E e capacitance f=1MHz C common-base output V =10V;I =i =0A; - 20 - pF ob CB E e capacitance f=1MHz [1] Pulse test: t £ 300m s;d£ 0.02. p 2PD2150_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 January 2007 5 of 13

2PD2150 NXP Semiconductors 20 V, 3 A NPN low V (BISS) transistor CEsat 104 006aaa956 2.0 006aaa957 IB (mA) = 20 10 8 (mICA) (IAC) 18 16 1.6 14 6 103 12 1.2 4 (1) (2) (3) 102 0.8 2 10 0.4 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.2 0.4 0.6 0.8 1.0 VBE (V) VCE (V) V =2V T =25(cid:176) C CE amb (1) T =100(cid:176) C amb (2) T =25(cid:176) C amb (3) T =- 40(cid:176) C amb Fig 4. Collector current as a function of base-emitter Fig 5. Collector current as a function of voltage; typical values collector-emitter voltage; typical values 5 006aaa958 103 006aaa959 50 30 IC 45 (1)(2)(3) (A) 40 25 hFE 4 35 20 15 102 3 10 2 IB (mA) = 5 10 1 0 1 0 1 2 3 4 5 1 10 102 103 104 VCE (V) IC (mA) T =25(cid:176) C V =2V amb CE (1) T =100(cid:176) C amb (2) T =25(cid:176) C amb (3) T =- 40(cid:176) C amb Fig 6. Collector current as a function of Fig 7. DCcurrent gain as a function of collector collector-emitter voltage; typical values current; typical values 2PD2150_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 January 2007 6 of 13

2PD2150 NXP Semiconductors 20 V, 3 A NPN low V (BISS) transistor CEsat 006aaa960 006aaa961 1 1 VCEsat VCEsat (V) (V) 10- 1 10- 1 (1) (1) (2) (2) (3) (3) 10- 2 10- 2 10- 3 10- 3 1 10 102 103 104 1 10 102 103 104 IC (mA) IC (mA) I /I =10 I /I =20 C B C B (1) T =100(cid:176) C (1) T =100(cid:176) C amb amb (2) T =25(cid:176) C (2) T =25(cid:176) C amb amb (3) T =- 40(cid:176) C (3) T =- 40(cid:176) C amb amb Fig 8. Collector-emitter saturation voltage as a Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values function of collector current; typical values 1 006aaa962 103 006aaa963 VCEsat fT (V) (MHz) (1) 10- 1 (2) 102 (3) 10- 2 10 10- 3 1 1 10 102 103 104 - 1 - 10 - 102 - 103 IC (mA) IE (mA) I /I =50 T =25(cid:176) C; V =2V C B amb CE (1) T =100(cid:176) C amb (2) T =25(cid:176) C amb (3) T =- 40(cid:176) C amb Fig 10. Collector-emitter saturation voltage as a Fig 11. Transition frequency as a function of emitter function of collector current; typical values current; typical values 2PD2150_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 January 2007 7 of 13

2PD2150 NXP Semiconductors 20 V, 3 A NPN low V (BISS) transistor CEsat 103 006aaa964 103 006aaa965 Cib Cob (pF) (pF) 102 102 10 10 10- 1 1 10 102 10- 1 1 10 102 VEB (V) VCB (V) T =25(cid:176) C; f=1MHz; I =i =0A T =25(cid:176) C; f=1MHz; I =i =0A amb E e amb E e Fig 12. Common-base input capacitance as a function Fig 13. Common-base output capacitance as a of emitter-base voltage; typical values function of collector-base voltage; typical values 2PD2150_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 January 2007 8 of 13

2PD2150 NXP Semiconductors 20 V, 3 A NPN low V (BISS) transistor CEsat 8. Package outline 4.6 4.4 1.6 1.8 1.4 1.4 2.6 2.4 4.25 3.75 1.2 1 2 3 0.8 0.53 0.40 0.48 0.44 1.5 0.35 0.23 3 Dimensions in mm 06-08-29 Fig 14. Package outline SOT89(SC-62/TO-243) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 1000 4000 2PD2150 SOT89 8mm pitch, 12mm tape and reel -115 -135 [1] For further information and the availability of packing methods, seeSection13. 2PD2150_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 January 2007 9 of 13

2PD2150 NXP Semiconductors 20 V, 3 A NPN low V (BISS) transistor CEsat 10. Soldering 4.75 2.25 2.00 1.90 1.20 solder lands 0.85 0.20 solder resist occupied area 1.70 1.20 solder paste 4.60 4.85 Dimensions in mm 0.50 1.20 1.20 1.00 3 2 1 (3x) msa442 0.60 (3x) 0.70 (3x) 3.70 3.95 SOT89 standard mounting conditions for reflow soldering Fig 15. Reflow soldering footprint SOT89(SC-62/TO-243) 6.60 2.40 2 3.50 7.60 solder lands 0.50 3 1 1.20 solder resist occupied area 3.00 Dimensions in mm preferred transport direction during soldering 1.50 0.70 5.30 msa423 Not recommended for wave soldering Fig 16. Wave soldering footprint SOT89(SC-62/TO-243) 2PD2150_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 January 2007 10 of 13

2PD2150 NXP Semiconductors 20 V, 3 A NPN low V (BISS) transistor CEsat 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes 2PD2150_2 20070102 Product data sheet - 2PD2150_1 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Table 1 “Quick reference data”: I collector current added C • Table 1 “Quick reference data”: I peak collector current maximum value adapted CM • Table 1 “Quick reference data”: V collector-emitter saturation voltage added CEsat • Table 5 “Limiting values”: V collector-emitter voltage maximum value adapted CEO • Table 5 “Limiting values”: I collector current maximum value adapted C • Table 5 “Limiting values”: I peak collector current maximum value adapted CM • Table 5 “Limiting values”: P total power dissipation for ceramicPCB condition added tot • Figure 1 “Power derating curves”: adapted • Table 6 “Thermal characteristics”: adapted • Table 6 “Thermal characteristics”: R thermal resistance from junction to ambient for th(j-a) ceramicPCB condition added • Figure2: t pulse time redefined to pulse duration p • Figure3: added • Table 7 “Characteristics”: V collector-emitter saturation voltage typical value added CEsat • Table 7 “Characteristics”: f transition frequency conditions slightly changed T • Table 7 “Characteristics”: C common-base input capacitance added ib • Table 7 “Characteristics”: C common-base output capacitance added ob • Figure4,6,10,11,12,13 and16: added • Figure5,7,8 and9: adapted • Section 12 “Legal information”: updated 2PD2150_1 20050422 Product data sheet - - 2PD2150_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 January 2007 11 of 13

2PD2150 NXP Semiconductors 20 V, 3 A NPN low V (BISS) transistor CEsat 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 12.2 Definitions malfunctionofaNXPSemiconductorsproductcanreasonablybeexpectedto result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Draft —The document is a draft version only. The content is still under Semiconductors products in such equipment or applications and therefore internal review and subject to formal approval, which may result in such inclusion and/or use is at the customer’s own risk. modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of Applications —Applications that are described herein for any of these informationincludedhereinandshallhavenoliabilityfortheconsequencesof products are for illustrative purposes only. NXP Semiconductors makes no use of such information. representation or warranty that such applications will be suitable for the specified use without further testing or modification. Short data sheet —A short data sheet is an extract from a full data sheet withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended Limiting values —Stress above one or more limiting values (as defined in forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent full information. For detailed and full information see the relevant full data damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof sheet, which is available on request via the local NXP Semiconductors sales the device at these or any other conditions above those given in the office. In case of any inconsistency or conflict with the short data sheet, the Characteristics sections of this document is not implied. Exposure to limiting full data sheet shall prevail. values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold 12.3 Disclaimers subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless General —Information in this document is believed to be accurate and explicitly otherwise agreed to in writing by NXP Semiconductors. In case of reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor any inconsistency or conflict between information in this document and such warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch terms and conditions, the latter will prevail. information and shall have no liability for the consequences of use of such No offer to sell or license —Nothing in this document may be interpreted information. or construed as an offer to sell products that is open for acceptance or the Right to make changes —NXPSemiconductorsreservestherighttomake grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents changes to information published in this document, including without or other industrial or intellectual property rights. limitation specifications and product descriptions, at any time and without notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. 12.4 Trademarks Suitability for use —NXP Semiconductors products are not designed, Notice:Allreferencedbrands,productnames,servicenamesandtrademarks authorized or warranted to be suitable for use in medical, military, aircraft, are the property of their respective owners. space or life support equipment, nor in applications where failure or 13. Contact information For additional information, please visit:http://www.nxp.com For sales office addresses, send an email to:salesaddresses@nxp.com 2PD2150_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 January 2007 12 of 13

2PD2150 NXP Semiconductors 20 V, 3 A NPN low V (BISS) transistor CEsat 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 Contact information. . . . . . . . . . . . . . . . . . . . . 12 14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 January 2007 Document identifier: 2PD2150_2