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2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits (cid:132) AEC-Q101 qualified (cid:132) Trench MOSFET technology (cid:132) Logic-level compatible (cid:132) Very fast switching 1.3 Applications (cid:132) High-speed line driver (cid:132) Relay driver (cid:132) Low-side loadswitch (cid:132) Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T =25°C - - 60 V DS amb voltage V gate-source -20 - 20 V GS voltage I drain current V =10V; T =25°C [1] - - 310 mA D GS amb Static characteristics R drain-source V =10V; I =500mA; - 1 1.6 Ω DSon GS D on-state T =25°C; t ≤300µs; pulsed; j p resistance δ≤0.01 [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2 S source 3 D drain G 1 2 mbb076 S SOT323 (SC-70) 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version 2N7002PW SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 4. Marking cod es Type number Marking code[1] 2N7002PW X8% [1] % = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China 5. Limiting values Table 5. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25°C - 60 V DS amb V gate-source voltage -20 20 V GS I drain current V =10V; T =25°C [1] - 310 mA D GS amb V =10V; T =100°C [1] - 240 mA GS amb I peak drain current T =25°C; single pulse; t ≤10µs - 1.2 A DM amb p P total power dissipation T =25°C [2] - 260 mW tot amb [1] - 310 mW T =25°C - 830 mW sp T junction temperature - 150 °C j T ambient temperature -55 150 °C amb T storage temperature -65 150 °C stg Source-drain diode I source current T =25°C [1] - 310 mA S amb [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 2 of 15

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa001 017aaa002 120 120 Pder Ider (%) (%) 80 80 40 40 0 0 −75 −25 25 75 125 175 −75 −25 25 75 125 175 Tamb (°C) Tamb (°C) Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a function of ambient temperature function of ambient temperature 017aaa027 10 ID (A) 1 (1) (2) 10−1 (3) (4) 10−2 (5) (6) 10−3 10−1 1 10 102 VDS (V) I = single pulse DM (1) t = 100 μs p (2) t = 1 ms p (3) t = 10 ms p (4) t = 100 ms p (5) DC; T = 25 °C sp (6) DC; T = 25 °C; drain mounting pad 1 cm2 amb Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 2N7002PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 3 of 15

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance in free air [1] - 415 480 K/W th(j-a) from junction to [2] - 350 400 K/W ambient R thermal resistance - - 150 K/W th(j-sp) from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 103 017aaa028 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0.02 0 10 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 017aaa029 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 10 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 4 of 15

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =10µA; V =0V; T =25°C 60 - - V (BR)DSS D GS j breakdown voltage V gate-source threshold I =250µA; V =V ; T =25°C 1.1 1.75 2.4 V GSth D DS GS j voltage I drain leakage current V =60V; V =0V; T =25°C - - 1 µA DSS DS GS j V =60V; V =0V; T =150°C - - 10 µA DS GS j I gate leakage current V =20V; V =0V; T =25°C - - 100 nA GSS GS DS j V =-20V; V =0V; T =25°C - - 100 nA GS DS j R drain-source on-state V =5V; I =50mA; pulsed; - 1.3 2 Ω DSon GS D resistance t ≤300µs; δ≤0.01; T =25°C p j V =10V; I =500mA; pulsed; - 1 1.6 Ω GS D t ≤300µs; δ≤0.01; T =25°C p j g forward V =10V; I =200mA; pulsed; - 400 - mS fs DS D transconductance t ≤300µs; δ≤0.01; T =25°C p j Dynamic characteristics Q total gate charge I =300mA; V =30V; V =4.5V; - 0.6 0.8 nC G(tot) D DS GS T =25°C Q gate-source charge j - 0.2 - nC GS Q gate-drain charge - 0.2 - nC GD C input capacitance V =0V; V =10V; f=1MHz; - 30 50 pF iss GS DS T =25°C C output capacitance j - 7 - pF oss C reverse transfer - 4 - pF rss capacitance t turn-on delay time V =50V; R =250Ω; V =10V; - 3 6 ns d(on) DS L GS R =6Ω; T =25°C t rise time G(ext) j - 4 - ns r t turn-off delay time - 10 20 ns d(off) t fall time - 5 - ns f Source-drain diode V source-drain voltage I =115mA; V =0V; T =25°C 0.47 0.75 1.1 V SD S GS j 2N7002PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 5 of 15

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 0.7 017aaa017 10−3 017aaa018 ID VGS = 4.0 V (A0).6 3.5 V ID (A) 0.5 10−4 3.25 V (1) (2) (3) 0.4 0.3 3.0 V 10−5 0.2 2.75 V 0.1 2.5 V 0.0 10−6 0.0 1.0 2.0 3.0 4.0 0 1 2 3 VDS (V) VGS (V) T = 25 °C T = 25 °C; V = 5 V amb amb DS (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a Fig 7. Sub-threshold drain current as a function of function of drain-source voltage; typical values gate-source voltage 017aaa019 017aaa020 10.0 6.0 RDSon (Ω) (1) R(DΩS)on 7.5 (2) 4.0 5.0 (1) 2.0 2.5 (2) (3) (4) (5) 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0.0 2.0 4.0 6.0 8.0 10.0 ID (A) VGS (V) T = 25 °C I = 500 mA amb D (1) V = 3.25 V (1) T = 150 °C GS amb (2) V = 3.5 V (2) T = 25 °C GS amb (3) V = 4 V GS (4) V = 5 V GS (5) V = 10 V GS Fig 8. Drain-source on-state resistance as a function Fig 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values 2N7002PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 6 of 15

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 017aaa021 017aaa022 1.0 2.4 ID a (A) 0.8 (1) (2) 1.8 0.6 1.2 0.4 0.6 0.2 (2) (1) 0.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 −60 0 60 120 180 VGS (V) Tamb (°C) V > I × R DS D DSon (1) T = 25 °C amb (2) T = 150 °C amb Fig 10. Transfer characteristics: drain current as a Fig 11. Normalized drain-source on-state resistance as function of gate-source voltage; typical values a function of ambient temperature; typical values 3.0 017aaa023 102 017aaa024 VGS(th) (V) (1) (1) C (pF) 2.0 (2) (2) 10 (3) (3) 1.0 0.0 1 −60 0 60 120 180 10−1 1 10 102 Tamb (°C) VDS (V) I = 0.25 mA; V = V f = 1 MHz; V = 0 V D DS GS GS (1) maximum values (1) C iss (2) typical values (2) C oss (3) minimum values (3) C rss Fig 12. Gate-source threshold voltage as a function of Fig 13. Input, output and reverse transfer capacitances ambient temperature as a function of drain-source voltage; typical values 2N7002PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 7 of 15

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 017aaa025 5.0 VGS VDS (V) 4.0 ID VGS(pl) 3.0 VGS(th) 2.0 VGS QGS1 QGS2 1.0 QGS QGD QG(tot) 003aaa508 0.0 0.0 0.2 0.4 0.6 0.8 QG (nC) I = 300 mA; V = 30 V; T = 25 °C D DS amb Fig 14. Gate-source voltage as a function of gate Fig 15. Gate charge waveform definitions charge; typical values 017aaa026 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) V = 0 V GS (1) T = 150 °C amb (2) T = 25 °C amb Fig 16. Source current as a function of source-drain voltage; typical values 2N7002PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 8 of 15

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 8. Test information P duty cycle δ = t1 t2 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 2N7002PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 9 of 15

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT323 D B E A X y HE v M A 3 Q A A1 c 1 2 e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x bp c D E e e1 HE Lp Q v w 1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23 mm 0.1 1.3 0.65 0.2 0.2 0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-11-04 SOT323 SC-70 06-03-16 Fig 18. Package outline SOT323 (SC-70) 2N7002PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 10 of 15

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 10. Soldering 2.65 1.85 1.325 solder lands 2 solder resist 2.35 (03.×6) 3 1.3 solder paste 0.5 occupied area 1 (3×) Dimensions in mm 0.55 (3×) sot323_fr Fig 19. Reflow soldering footprint for SOT323 (SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 3.65 2.1 1.8 Dimensions in mm preferred transport 09 (2×) direction during soldering sot323_fw Fig 20. Wave soldering footprint for SOT323 (SC-70) 2N7002PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 11 of 15

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision his tory Document ID Release date Data sheet status Change notice Supersedes 2N7002PW v.2 20100729 Product data sheet - 2N7002PW_1 Modifications: • Correction of thermal values. • Correction of various characteristics values including related graphs. 2N7002PW_1 20100422 Product data sheet - - 2N7002PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 12 of 15

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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NXP Semiconductors hereby expressly objects to limitation specifications and product descriptions, at any time and without applying the customer’s general terms and conditions with regard to the notice. This document supersedes and replaces all information supplied prior purchase of NXP Semiconductors products by customer. to the publication hereof. 2N7002PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 13 of 15

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or 12.4 Trademarks construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or Notice: All referenced brands, product names, service names and trademarks other industrial or intellectual property rights. are the property of their respective owners. Export control — This document as well as the item(s) described herein may Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, be subject to export control regulations. Export might require a prior FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, authorization from national authorities. ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, Quick reference data — The Quick reference data is an extract of the TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 2N7002PW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 29 July 2010 14 of 15

2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . .9 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .10 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 13 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 July 2010 Document identifier: 2N7002PW