2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.5 (cid:2) @ 10 V, 60 V 115 mA 500 mA MAXIMUM RATINGS Rating Symbol Value Unit N−Channel 3 Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 M(cid:2)) VDGR 60 Vdc Drain Current ID ±(cid:2)115 mAdc − Continuous TC = 25°C (Note 1) ID ±(cid:2)75 − Continuous TC = 100°C (Note 1) IDM ±(cid:2)800 1 − Pulsed (Note 2) Gate−Source Voltage − Continuous VGS ±(cid:2)20 Vdc 2 − Non−repetitive (tp ≤ 50 (cid:3)s) VGSM ±(cid:2)40 Vpk MARKING 3 THERMAL CHARACTERISTICS DIAGRAM Characteristic Symbol Max Unit 1 To(DtaNelo rDateete v3 ia)c beTo ADv =ies 2s2i55p°°aCCtion FR−5 Board PD 212.85 mmWW/°C SOT2−23 702(cid:2) M(cid:2) Thermal Resistance, Junction−to−Ambient R(cid:4)JA 556 °C/W CASE 318 1 STYLE 21 Total Device Dissipation PD (Note 4) Alumina Substrate, TA = 25°C 300 mW 702 = Device Code Derate above 25°C 2.4 mW/°C M = Date Code* Thermal Resistance, Junction−to−Ambient R(cid:4)JA 417 °C/W (cid:2) = Pb−Free Package (Note: Microdot may be in either location) Junction and Storage Temperature TJ, Tstg −(cid:2)55 to °C +150 *Date Code orientation and/or position may vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. The Power Dissipation of the package may result in a lower continuous drain current. Device Package Shipping† 2. Pulse Test: Pulse Width ≤ 300 (cid:3)s, Duty Cycle ≤ 2.0%. 3. FR−5 = 1.0 x 0.75 x 0.062 in. 2N7002LT1G SOT−23 3000 Tape & Reel 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. (Pb−Free) 2N7002LT3G 10,000 Tape & Reel 2V7002LT1G 3000 Tape & Reel SOT−23 2V7002LT3G 10,000 Tape & Reel (Pb−Free) 2N7002LT1H* 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Not for new design. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2016 − Rev. 8 2N7002L/D

2N7002L, 2V7002L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage V(BR)DSS 60 − − Vdc (VGS = 0, ID = 10 (cid:3)Adc) Zero Gate Voltage Drain Current TJ = 25°C IDSS − − 1.0 (cid:3)Adc (VGS = 0, VDS = 60 Vdc) TJ = 125°C − − 500 Gate−Body Leakage Current, Forward IGSSF − − 100 nAdc (VGS = 20 Vdc) Gate−Body Leakage Current, Reverse IGSSR − − −100 nAdc (VGS = −(cid:2)20 Vdc) ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 1.0 − 2.5 Vdc (VDS = VGS, ID = 250 (cid:3)Adc) On−State Drain Current ID(on) 500 − − mA (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Static Drain−Source On−State Voltage VDS(on) Vdc (VGS = 10 Vdc, ID = 500 mAdc) − − 3.75 (VGS = 5.0 Vdc, ID = 50 mAdc) − − 0.375 Static Drain−Source On−State Resistance rDS(on) Ohms (VGS = 10 V, ID = 500 mAdc) TC = 25°C − − 7.5 TC = 125°C − − 13.5 (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C − − 7.5 TC = 125°C − − 13.5 Forward Transconductance gFS 80 − − mS (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Ciss − − 50 pF (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance Coss − − 25 pF (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crss − − 5.0 pF (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time (VDD = 25 Vdc, ID (cid:2) 500 mAdc, td(on) − − 20 ns Turn−Off Delay Time RG = 25 (cid:2), RL = 50 (cid:2), Vgen = 10 V) td(off) − − 40 ns BODY−DRAIN DIODE RATINGS Diode Forward On−Voltage VSD − − −1.5 Vdc (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous IS − − −115 mAdc (Body Diode) Source Current Pulsed ISM − − −800 mAdc 5. Pulse Test: Pulse Width ≤ 300 (cid:3)s, Duty Cycle ≤ 2.0%. www.onsemi.com 2

2N7002L, 2V7002L TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 1.8 TA = 25°C VDS = 10 V -(cid:2)55°C 25°C PS) 1.6 VGS = 10 V PS) 0.8 125°C M 1.4 9 V M A A ENT ( 1.2 8 V ENT ( 0.6 R R R 1.0 R U U C 7 V C N 0.8 N 0.4 AI 6 V AI R 0.6 R D D I, D 0.4 5 V I, D 0.2 0.2 4 V 3 V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VDS, DRAIN SOURCE VOLTAGE (VOLTS) VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 1. Ohmic Region Figure 2. Transfer Characteristics E NC 2.4 D) 1.2 A E N-SOURCE ON-RESISTRMALIZED) 22111.....20864 VIDG =S 2=0 100 m VA D VOLTAGE (NORMALIZ 11011...019..10505 VIDD =S 1=. 0V GmSA C DRAI(NO 11..20 ESHOL 00.8.95 TATI 0.8 THR 0.8 , SDS(on) 00..46 V, GS(th) 00.7.75 r -(cid:2)60 -(cid:2)20 +(cid:2)20 +(cid:2)60 +(cid:2)100 +(cid:2)140 -(cid:2)60 -(cid:2)20 +(cid:2)20 +(cid:2)60 +(cid:2)100 +(cid:2)140 T, TEMPERATURE (°C) T, TEMPERATURE (°C) Figure 3. Temperature versus Static Figure 4. Temperature versus Gate Drain−Source On−Resistance Threshold Voltage www.onsemi.com 3

2N7002L, 2V7002L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 21: END VIEW PIN 1. GATE 2. SOURCE 3. DRAIN RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com 2N7002L/D 4

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: 2N7002LT1 2N7002LT1G 2N7002LT3 2N7002LT3G 2V7002LT1G 2V7002LT3G