2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − www.onsemi.com h = 3500 (Typ) @ I = 4.0 Adc FE C • Collector−Emitter Sustaining Voltage − @ 200 mAdc PNP SILICON V = 60 Vdc (Min) − 2N6667 CEO(sus) DARLINGTON = 80 Vdc (Min) − 2N6668 • POWER TRANSISTORS Low Collector−Emitter Saturation Voltage − V = 2.0 Vdc (Max)@ I = 5.0 Adc 10 A, 60−80 V, 65 W CE(sat) C • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • TO−220AB Compact Package • Complementary to 2N6387, 2N6388 • These Devices are Pb−Free and are RoHS Compliant* 4 COLLECTOR 1 2 BASE 3 TO−220 CASE 221A ≈8 k ≈120 STYLE 1 MARKING DIAGRAM EMITTER Figure 1. Darlington Schematic 2N666x AYWWG x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping 2N6667G TO−220 50 Units/Rail (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please 2N6668G TO−220 50 Units/Rail download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free) Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 − Rev. 8 2N6667/D

2N6667, 2N6668 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎMÎÎAXÎÎIMUÎÎM RÎÎATÎÎINGÎÎS (NÎÎoteÎÎ 1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol 2N6667 2N6668 Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎCoÎÎllectoÎÎr−EÎÎmitteÎÎr VoÎÎltageÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCEÎÎO ÎÎÎÎÎÎÎÎ60ÎÎÎÎÎÎÎÎÎÎ80ÎÎÎÎÎÎÎÎVdcÎÎ ÎÎÎÎCoÎÎllectoÎÎr−BÎÎase ÎÎVoltaÎÎgeÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCÎÎB ÎÎÎÎÎÎÎÎ60ÎÎÎÎÎÎÎÎÎ80ÎÎÎÎÎÎÎÎVdcÎÎ ÎÎÎÎEmÎÎitterÎÎ−BasÎÎe VoÎÎltagÎÎe ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVEÎÎB ÎÎÎÎÎÎÎÎÎÎÎÎ5.0ÎÎÎÎÎÎÎÎÎÎÎÎVdcÎÎ ÎÎCoÎllectoÎr CuÎrrenÎt−ÎConÎtinuÎousÎÎÎÎÎÎÎÎÎÎÎÎÎICÎÎÎÎÎÎÎ10ÎÎÎÎÎÎAdcÎ − Peak 15 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current IB 250 mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TC = 25(cid:2)C PD 65 W ÎÎÎÎDÎÎeraÎÎte abÎÎoveÎÎ 25(cid:2)ÎÎC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ0.52ÎÎÎÎÎÎÎÎÎÎÎÎW/(cid:2)CÎÎ ÎÎTotÎal DÎeviceÎ DisÎsipaÎtion Î@ TÎA = 2Î5(cid:2)CÎÎÎÎÎÎÎÎÎÎÎÎPDÎÎÎÎÎÎÎ2.0ÎÎÎÎÎÎWÎ ÎÎÎÎDÎÎeraÎÎte abÎÎoveÎÎ 25(cid:2)ÎÎC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ0.01ÎÎ6 ÎÎÎÎÎÎÎÎÎÎW/(cid:2)CÎÎ ÎÎOpÎeratiÎng aÎnd SÎtoraÎge JÎunctÎion TÎempÎeratÎure RÎangÎe ÎÎÎÎÎÎÎÎTJ, TÎstg ÎÎÎÎΖ65Î to +Î150ÎÎÎÎÎ(cid:2)CÎ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCÎÎharaÎÎcterÎÎisticÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSÎÎymÎÎbolÎÎÎÎÎÎÎÎMÎÎax ÎÎÎÎÎÎÎÎUniÎÎt ÎÎÎÎThÎÎermaÎÎl ReÎÎsistaÎÎnceÎÎ, JunÎÎctionÎÎ to CÎÎaseÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎR(cid:2)JÎÎC ÎÎÎÎÎÎÎÎ1ÎÎ.92 ÎÎÎÎÎÎÎÎ(cid:2)C/WÎÎ ÎÎThÎermaÎl ReÎsistaÎnceÎ, JunÎctionÎ to AÎmbÎientÎÎÎÎÎÎÎÎÎÎÎÎÎÎR(cid:2)JÎA ÎÎÎÎ6Î2.5 ÎÎÎÎ(cid:2)C/WÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (Note 1) (TC = 25(cid:2)C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage (Note 2) 2N6667 VCEO(sus) 60 − Vdc ÎÎÎÎ(ÎÎIC = ÎÎ200ÎÎ mAdÎÎc, IBÎÎ = 0ÎÎ) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2NÎÎ666ÎÎÎÎ8 ÎÎÎÎÎÎÎÎÎÎÎÎ80 ÎÎÎÎÎÎÎÎ− ÎÎÎÎÎÎÎÎ ÎÎCoÎllectoÎr CuÎtoff ÎCurrÎent(ÎVCEÎ = 60Î VdÎc, IBÎ = 0)ÎÎÎÎÎÎÎÎ2NÎ666ÎÎ7 ÎIÎCEOÎÎÎÎ− ÎÎÎ1Î.0 ÎÎÎmAdÎc (VCE = 80 Vdc, IB = 0) 2N6668 − 1.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current ÎÎ(ÎVCEÎ = 60Î VdcÎ, VEÎB(offÎ) = 1Î.5 VdÎc) ÎÎÎÎÎÎÎÎÎÎ2NÎ666ÎÎ7 ÎIÎCEXÎÎÎÎ− ÎÎÎ3Î00 ÎÎÎ(cid:3)AdÎc ÎÎ(ÎVCEÎ = 80Î VdcÎ, VEÎB(offÎ) = 1Î.5 VÎdc) ÎÎÎÎÎÎÎÎÎÎ2NÎ666ÎÎ8 ÎÎÎÎÎÎ− ÎÎÎ3Î00 ÎÎÎÎ (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125(cid:2)C) 2N6667 − 3.0 mAdc ÎÎÎÎ(ÎÎVCEÎÎ = 80ÎÎ VdcÎÎ, VEÎÎB(offÎÎ) = 1ÎÎ.5 VdÎÎc, TÎÎC = ÎÎ125(cid:2)ÎÎC) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2NÎÎ666ÎÎÎÎ8 ÎÎÎÎÎÎÎÎÎÎÎÎ− ÎÎÎÎÎÎ3ÎÎ.0 ÎÎÎÎÎÎÎÎ ÎÎÎÎEmÎÎitterÎÎ CutÎÎoff CÎÎurreÎÎnt (VÎÎBE =ÎÎ 5.0 ÎÎVdcÎÎ, IC =ÎÎ 0)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIÎÎEBOÎÎÎÎÎÎÎ− ÎÎÎÎÎ5ÎÎ.0 ÎÎÎÎÎmAdÎÎc ÎÎÎÎON CÎÎHAÎÎRACÎÎTERÎÎISTÎÎICS ÎÎ(NotÎÎe 1)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎDCÎ CurÎrentÎ GainÎ (ICÎ = 5Î.0 AdÎc, VÎCE =Î 3.0Î VdcÎ) ÎÎÎÎÎÎÎÎÎÎÎÎhFEÎÎÎ1Î000ÎÎÎ20Î000ÎÎÎ−Î (IC = 10 Adc, VCE = 3.0 Vdc) 100 − ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage(IC = 5.0 Adc, IB = 0.01 Adc) VCE(sat) − 2.0 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(ÎÎIC =ÎÎ 10 AÎÎdc, ÎÎIB = ÎÎ0.1 AÎÎdc)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− ÎÎÎÎÎÎ3ÎÎ.0 ÎÎÎÎÎÎÎÎ ÎÎBaÎse−EÎmittÎer SÎaturaÎtionÎ VoltÎage(ÎIC =Î 5.0 ÎAdc,Î IB =Î 0.01Î AdÎc) ÎÎÎÎÎÎÎÎVBÎE(saÎt) ÎÎÎ− ÎÎÎ2Î.8 ÎÎÎVdcÎ (IC = 10 Adc, IB = 0.1 Adc) − 4.5 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) |hfe| 20 − − ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 200 pF ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 1000 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2%. http://onsemi.com 2

2N6667, 2N6668 VCC - 30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS RC D1, MUST BE FAST RECOVERY TYPES e.g., SCOPE (cid:2)(cid:2)1MNS5D862150 U0 SUESDE DA BBOEVLEO WIB (cid:3)IB (cid:3) 10 100 m0A mA V2 RB TUT APPROX + 8 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf (cid:2) 10 ns 0 51 D1 (cid:3) 8 k (cid:3) 120 DUTY CYCLE = 1.0% V1 + 4.0 V APPROX - 12 V 25 μs Figure 2. Switching Times Test Circuit TA TC 4 80 10 7 VCC = 30 V S) 5 IC/IB = 250 N (WATT 3 60 32 tr ITBJ1 == 2IB52°C SIPATIO 2 40 TC μME ((cid:3)(cid:4)s) 1 ts S TI 0.7 R DI t, 0.5 WE TA O 1 20 0.3 .td , PD 0.2 tf P 0.1 0 0 20 40 60 80 100 120 140 160 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 T, TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPS) Figure 3. Power Derating Figure 4. Typical Switching Times 1 D = 0.5 E C0.5 TIVESTAN0.3 EFFECL RESI0.2 00..12 r(t) NORMALIZED TRANSIENT THERMA0000...000.1532 000...000521 SINGLE PULSE P(pk)DUTtY1 CtY2CLE, D = t1/t2 ZRTDPRθJU EθC(JJpLACCUkSD() Rt=E-) T V =1TTIE. MCR9rS( 2EtA= )°A I ARCNPPTθ/( PWpS JtkCL1H ) Y MOR FAθWJOXCNR(t )POWER 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 t, TIME (ms) Figure 5. Thermal Response http://onsemi.com 3

2N6667, 2N6668 20 100 μs There are two limitations on the power handling ability of 10 5 ms S) a transistor: average junction temperature and second NT (AMP 253 dc 1 ms blirmeaitksd oofw tnh.e S tarafen soispteorra ttihnagt amreuas tc buerv oebs sienrdviecda tfeo IrC r e−l iVabClEe E R operation; i.e., the transistor must not be subjected to greater R 1 U C dissipation than the curves indicate. TOR 00..35 TJ = 150°C 2N6667 The data of Figure 6 is based on TJ(pk) = 150(cid:2)C; TC is LEC0.2 BONDING WIRE LIMIT 2N6668 variable depending on conditions. Second breakdown pulse , COLC00.0.15 TSHEECROMNADL B LRIMEAITK @DO TWCN = L2I5M°ICT l<im 15it0s (cid:2)aCre. TvJa(plikd) mfoary dbeu tcya lccyuclalteesd tforo 1m0 t%he pdraotav iidne Fdi gTuJr(ep 5k). I0.03 CURVES APPLY BELOW RATED VCEO At high case temperatures, thermal limitations will reduce 0.02 the power that can be handled to values less than the 1 2 3 5 7 10 20 30 50 70 100 limitations imposed by second breakdown. VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Maximum Safe Operating Area 10,000 300 5000 N AI T G 2000 TJ = 25°C UREN 1000 E (pF) 200 L C 500 NC LL-SIGNA 120000 TVICCC = E= 3 =2 A54° MVCPOSLTS CAPACITA 100 Cib Cob MA C, 70 S 50 , E 50 F h 20 10 30 1 2 3 5 7 10 2030 50 70 100 200300500 1000 0.1 0.2 0.5 1 2 5 10 20 50 100 f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Small−Signal Current Gain Figure 8. Typical Capacitance 20,000 S) 2.6 T VCE = 3 V OL TJ = 25°C 107,000000 TJ = 150°C GE (V 2.2 N A GAI 5000 OLT IC = 2 A 4 A 6 A ENT 3000 ER V 1.8 R T R 2000 T C CU TJ = 25°C -EMI 1.4 , DE1000 TOR F 700 C h E 500 LL 1 TJ = - 55°C CO 300 , E 200 VC 0.6 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.3 0.5 0.7 1 2 3 5 7 10 20 30 IC, COLLECTOR CURRENT (AMPS) IB, BASE CURRENT (mA) Figure 9. Typical DC Current Gain Figure 10. Typical Collector Saturation Region http://onsemi.com 4

2N6667, 2N6668 3 +(cid:5)5 °C) +(cid:5)4 hFE(cid:4)@(cid:4)VCE(cid:4)(cid:4)(cid:4)3.0(cid:4)V LTS) 2.5 TJ = 25°C NTS (mV/ ++(cid:5)(cid:5)32 *IC/IB ≤ 3 25°C to 150°C O E V, VOLTAGE (V 1.25 VBE(sat) @ IC/IB = 250 URE COEFFICI +-(cid:5)(cid:5)101 ∗θVC for VCE(sat) -(cid:5)55°C to 25°C AT -(cid:5)2 1 VBE @ VCE = 3 V MPER -(cid:5)3 θVB for VBE 25°C to 150°C TE -(cid:5)4 -(cid:5)55°C to 25°C 0.5 VCE(sat) @ IC/IB = 250 θ, V -(cid:5)5 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) Figure 11. Typical “On” Voltages Figure 12. Typical Temperature Coefficients 105 REVERSE FORWARD 104 A) μT ((cid:3)(cid:4)103 VCE = 30 V N E R R U102 C OR TJ = 150°C CT101 E LL 100°C CO100 , C 25°C I 10-(cid:5)1 +(cid:5)0.6 +(cid:5)0.4 +(cid:5)0.2 0 -(cid:5)0.2 -(cid:5)0.4 -(cid:5)0.6 -(cid:5)0.8 -(cid:5)1 -(cid:5)1.2 -(cid:5)1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 13. Typical Collector Cut−Off Region http://onsemi.com 5

2N6667, 2N6668 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. −T− SPELAATNIENG 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL B F C BODY AND LEAD IRREGULARITIES ARE T S ALLOWED. INCHES MILLIMETERS 4 DIM MIN MAX MIN MAX A 0.570 0.620 14.48 15.75 Q A B 0.380 0.415 9.66 10.53 C 0.160 0.190 4.07 4.83 1 2 3 U D 0.025 0.038 0.64 0.96 F 0.142 0.161 3.61 4.09 H G 0.095 0.105 2.42 2.66 H 0.110 0.161 2.80 4.10 K J 0.014 0.024 0.36 0.61 Z K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 L R Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 V J S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 G U 0.000 0.050 0.00 1.27 D V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 N STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com 2N6667/D 6