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  • 型号: 2N6505G
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
  • 要求:
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2N6505G产品简介:

ICGOO电子元器件商城为您提供2N6505G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2N6505G价格参考。ON Semiconductor2N6505G封装/规格:晶闸管 - SCR, SCR 100V 25A Standard Recovery Through Hole TO-220AB。您可以下载2N6505G参考资料、Datasheet数据手册功能说明书,资料中有2N6505G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

THYRISTOR SCR 25A 100V TO220ABSCR 100V 25A

产品分类

SCR - 单个分离式半导体

GateTriggerCurrent-Igt

30 mA

GateTriggerVoltage-Vgt

1.5 V

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体闸流管,SCR,ON Semiconductor 2N6505G-

数据手册

点击此处下载产品Datasheet

产品型号

2N6505G

SCR类型

标准恢复型

不重复通态电流

250 A

产品目录页面

点击此处下载产品Datasheet

产品种类

SCRs

供应商器件封装

TO-220AB

保持电流Ih最大值

40 mA

关闭状态漏泄电流(在VDRMIDRM下)

0.01 mA

其它名称

2N6505GOS

包装

散装

商标

ON Semiconductor

安装类型

通孔

安装风格

Through Hole

封装

Bulk

封装/外壳

TO-220-3

封装/箱体

TO-220-3

工作温度

-40°C ~ 125°C

工厂包装数量

500

最大工作温度

+ 125 C

最小工作温度

- 40 C

栅极触发电压-Vgt

1.5 V

栅极触发电流-Igt

30 mA

标准包装

500

正向电压下降

1.8 V

电压-断态

100V

电压-栅极触发(Vgt)(最大值)

1.5V

电压-通态(Vtm)(最大值)

1.8V

电流-不重复浪涌50、60Hz(Itsm)

250A @ 60Hz

电流-保持(Ih)(最大值)

40mA

电流-断态(最大值)

10µA

电流-栅极触发(Igt)(最大值)

30mA

电流-通态(It(AV))(最大值)

16A

电流-通态(It(RMS))(最大值)

25A

系列

2N650X

额定重复关闭状态电压VDRM

100 V

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PDF Datasheet 数据手册内容提取

Thyristors Surface Mount – 50 - 800V > 2N6504 Series 2N6504 Series Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features • Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts • 300 A Surge Current Capability • Pb−Free Package is Available Pin Out Functional Diagram CASE 221A STYLE 4 1 2 Additional Information Datasheet Resources Samples © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/28/19

Thyristors Surface Mount – 50 - 800V > 2N6504 Series Maximum Ratings (T = 25°C unless otherwise noted) J Rating Symbol Value Unit 2N6504 50 2N6505 V , 100 Peak Repetitive Off-State Voltage (Note 1) DRM 2N6507 V 400 V (Gate Open, Sine Wave 50 to 60 Hz, T = 25 to 125°C) RRM J 2N6508 600 2N6509 800 On-State RMS Current (180° Conduction Angles; T = 85°C) I 25 A C T (RMS) Average On-State Current (180° Conduction Angles; T = 85°C) I 16 A C T (AV) Peak Non-repetitive Surge Current I 250 A²s (1/2 Cycle, Sine Wave 60 Hz, T = 100°C) TSM J Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 85°C) P 20 W C GM Forward Average Gate Power (t = 8.3 ms, T = 85°C) P 0.5 W C G(AV) Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, T = 85°C) I 2.0 A C GM Operating Junction Temperature Range T -40 to +125 °C J Storage Temperature Range T -40 to +125 °C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit *Thermal Resistance, Junction to Case R 1.5 °C/W ƟJC *Maximum Lead Temperature for Soldering Purposes, 1/8” from case for T 260 °C 10 seconds L * Indicates JEDEC Registered Data. Electrical Characteristics - OFF (T = 25°C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit - - 1.0 µA †Peak Repetitive Blocking Current T = 25°C I , J DRM (V = V = V ; Gate Open) T = 125°C I AK DRM RRM J RRM - - 2.0 mA © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/28/19

Thyristors Surface Mount – 50 - 800V > 2N6504 Series Electrical Characteristics - ON (T = 25°C unless otherwise noted; Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit * Forward On-State Voltage (Note 2) (ITM = 50 A) V − − 1.8 V TM * Gate Trigger Current (Continuous dc) T = 25°C − 9.0 30 C I mA (VAK = Rated VDRM or VRRM, Gate Open) TC = -40°C GT − − 75 * Gate Trigger Voltage (Continuous dc) (V = 12 Vdc, R = 100 Ω, T = -40 °C) V − 1.0 1.5 V AK L C GT Gate Non-Trigger Voltage (V = 12 Vdc, R = 100 Ω, T = 125°C) V 0.2 − − V AK L J GD *Holding Current (V = 12 Vdc, T = 25°C − 18 40 D C I mA Initiating Current = 200 mA, Gate Open) TC = -40°C H − − 80 * Turn-On Time (I = 25 A, I = 50 mAdc) t − 1.5 2.0 µs TM GT gt (I = 25 A, I = 25 A) - - 15 Turn-Off Time (V = rated voltage) TM R t µs RM (ITM = 25 A, IR = 25 A, TJ = 125°C) q - - 35 *Indicates JEDEC Registered Data 2. Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off-State Voltage (Gate Open, Rated VDRM, dv/dt(c) − 50 − V/µs Exponential Waveform) Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Forward Off State Voltage DRM IDRM Peak Forward Blocking Current I I V Peak Repetitive Reverse Off State Voltage RRM IRRM Peak Reverse Blocking Current I V Maximum On State Voltage TM I Holding Current H Figure 1. AverageCurrent Derating Figure 2. Maximum On-State Power Dissipation © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/28/19

Thyristors Surface Mount – 50 - 800V > 2N6504 Series Figure 3. Typical On−State Characteristics Figure 4. Maximum Non−Repetitive Surge Current Figure 5. Thermal Response © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/28/19

Thyristors Surface Mount – 50 - 800V > 2N6504 Series Typical Trigger Characteristics Figure 6. Typical Gate Trigger Current vs. Junction Temperature Figure 7. Typical Gate Trigger Voltage vs. Junction Temperature Figure 8. Typical Holding Current vs.Junction Temperature Ordering Information Device Package Shipping 2N6504 TO-220AB TO-220AB 2N6504G (Pb-Free) 500 Units / Box 2N6505 TO-220AB TO-220AB 2N6505G (Pb-Free) 2N6505T TO-220AB 500 Units / Box TO-220AB 2N6505TG (Pb-Free) 2N6507 TO-220AB 500 Units / Box TO-220AB 2N6507G (Pb-Free) 2N6507T TO-220AB 500 Units / Box TO-220AB 2N6507TG (Pb-Free) 2N6508 TO-220AB 500 Units / Box TO-220AB 2N6508G (Pb-Free) 2N6508TG TO-220AB 500 Units / Box TO-220AB 2N6509 (Pb-Free) 500 Units / Box 2N6509G TO-220AB TO-220AB 2N6509T (Pb-Free) 500 Units / Box 2N6509TG TO-220AB © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/28/19

Thyristors Surface Mount – 50 - 800V > 2N6504 Series Dimensions Part Marking System SEATING PLANE B F C T S TO-220AB CASE 221A 4 Q A STYLE 3 12 3 U 1 H 2 K Z L R V J G D N Inches Millimeters Pin Assignment Dim Min Max Min Max 1 Cathode A 0.590 0.620 14.99 15.75 2 Anode B 0.380 0.420 9.65 10.67 3 Gate C 0.178 0.188 4.52 4.78 4 Anode D 0.025 0.035 0.64 0.89 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.41 2.67 H 0.110 0.130 2.79 3.30 J 0.018 0.024 0.46 0.61 K 0.540 0.575 13.72 14.61 L 0.060 0.075 1.52 1.91 N 0.195 0.205 4.95 5.21 Q 0.105 0.115 2.67 2.92 R 0.085 0.095 2.16 2.41 S 0.045 0.060 1.14 1.52 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/28/19