2N6486 2N6487 2N6488 NPN 2N6489 2N6490 2N6491 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N6486, 2N6489 series types are complementary silicon power transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) 2N6486 2N6487 2N6488 SYMBOL 2N6489 2N6490 2N6491 UNITS Collector-Base Voltage VCBO 50 70 90 V Collector-Emitter Voltage VCEO 40 60 80 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 15 A Continuous Base Current IB 5.0 A Power Dissipation PD 75 W Power Dissipation (TA=25°C) PD 1.8 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 1.67 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C) 2N6486 2N6487 2N6488 2N6489 2N6490 2N6491 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS ICEV VCE=45V, VEB=1.5V - 500 - - - - μA ICEV VCE=65V, VEB=1.5V - - - 500 - - μA ICEV VCE=85V, VEB=1.5V - - - - - 500 μA ICEO VCE=½ Rated VCEO - 1.0 - 1.0 - 1.0 mA IEBO VEB=5.0V - 1.0 - 1.0 - 1.0 mA BVCEV VBE=1.5V, IC=200mA 50 - 70 - 90 - V BVCEO IC=200mA 40 - 60 - 80 - V VCE(SAT) IC=5.0A, IB=0.5A - 1.3 - 1.3 - 1.3 V VCE(SAT) IC=15A, IB=5.0A - 3.5 - 3.5 - 3.5 V VBE(ON) VCE=4.0V, IC=5.0A - 1.3 - 1.3 - 1.3 V VBE(ON) VCE=4.0V, IC=15A - 3.5 - 3.5 - 3.5 V hFE VCE=4.0V, IC=5.0A 20 150 20 150 20 150 hFE VCE=4.0V, IC=15A 5.0 - 5.0 - 5.0 - hfe VCE=4.0V, IC=1.0A, f=1.0kHz 25 - 25 - 25 - fT VCE=4.0V, IC=1.0A, f=1.0MHz 5.0 - 5.0 - 5.0 - MHz R1 (11-September 2012)

2N6486 2N6487 2N6488 NPN 2N6489 2N6490 2N6491 PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R1 (11-September 2012) www.centralsemi.com

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