2N6387, 2N6388 Plastic Medium-Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features www.onsemi.com • High DC Current Gain − h = 2500 (Typ) @ I = 4.0 Adc FE C • Collector−Emitter Sustaining Voltage − @ 100 mAdc DARLINGTON NPN SILICON VCEO(sus) = 60 Vdc (Min) − 2N6387 POWER TRANSISTORS = 80 Vdc (Min) − 2N6388 8 AND 10 AMPERES • Low Collector−Emitter Saturation Voltage − 65 WATTS, 60 − 80 VOLTS V = 2.0 Vdc (Max) @ I CE(sat) C = 5.0 Adc − 2N6387, 2N6388 • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • TO−220AB Compact Package 4 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit 1 2 Collector−Emitter Voltage 2N6387 VCEO 60 Vdc 3 2N6388 80 TO−220 Collector−Base Voltage 2N6387 VCB 60 Vdc CASE 221A 2N6388 80 STYLE 1 Emitter−Base Voltage VEB 5.0 Vdc MARKING DIAGRAM Collector Current − Continuous IC 10 Adc − Peak 15 Base Current IB 250 mAdc Total Power Dissipation @ TC = 25(cid:2)C PD 65 W Derate above 25(cid:2)C 0.52 W/°C 2N638xG TDoetraal tPe oawbeorv eD i2s5s(cid:2)ipCation @ TA = 25(cid:2)C PD 02.0.016 WW/°C AYWW Operating and Storage Junction, TJ, Tstg −65 to +150 °C Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2N638x =Device Code 1. Indicates JEDEC Registered Data. x = 7 or 8 G =Pb−Free Package THERMAL CHARACTERISTICS A =Assembly Location Y =Year Characteristics Symbol Max Unit WW =Work Week Thermal Resistance, Junction−to−Case R(cid:2)JC 1.92 (cid:2)C/W Thermal Resistance, Junction−to−Ambient R(cid:2)JA 62.5 (cid:2)C/W ORDERING INFORMATION Device Package Shipping 2N6387G TO−220 50 Units / Rail (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please 2N6388G TO−220 50 Units / Rail download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free) Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 − Rev. 15 2N6387/D

2N6387, 2N6388 TA TC 4.0 80 S) T T A 3.0 60 W N ( TIO TC A SIP 2.0 40 S DI R WE TA O 1.0 20 P , D P 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C) Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (TC = 25(cid:2)C unless otherwise noted) (Note 2) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) VCEO(sus) Vdc (IC = 200 mAdc, IB = 0) 2N6387 60 − 2N6388 80 − Collector Cutoff Current ICEO mAdc (VCE = 60 Vdc, IB = 0) 2N6387 − 1.0 (VCE = 80 Vdc, IB = 0) 2N6388 − 1.0 Collector Cutoff Current ICEX (cid:3)Adc (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N6387 − 300 (VCE − 80 Vdc, VEB(off) = 1.5 Vdc) 2N6388 − 300 (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125(cid:2)C) 2N6387 − 3.0 mAdc (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125(cid:2)C) 2N6388 − 3.0 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 5.0 mAdc ON CHARACTERISTICS (Note 3) DC Current Gain hFE − (IC = 5.0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388 1000 20,000 (IC = 1 0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388 100 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 5.0 Adc, IB = 0.01 Adc) 2N6387, 2N6388 − 2.0 (IC = 10 Adc, IB = 0.1 Adc) 2N6387, 2N6388 − 3.0 Base−Emitter On Voltage VBE(on) Vdc (IC = 5.0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388 − 2.8 (IC = 10 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388 − 4.5 DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) |hfe| 20 − − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 200 pF Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 1000 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width ≤ 300 (cid:3)s, Duty Cycle ≤ 2.0%. http://onsemi.com 2

2N6387, 2N6388 VCC RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS + 30 V D1 MUST BE FAST RECOVERY TYPES, e.g., (cid:4)1N5825 USED ABOVE IB (cid:3) 100 mA RC (cid:4)MSD6100 USED BELOW IB (cid:3) 100 mA SCOPE TUT V1 RB APPROX + 12 V 51 D1 (cid:3) 8.0 k (cid:3) 120 0 V2 - 4.0 V APPROX 25 (cid:3)s FOR td AND tr, D1 IS DISCONNECTED - 8 V AND V2 = 0 tr, tf (cid:2) 10 ns DUTY CYCLE = 1.0% Figure 2. Switching Times Test Circuit 7.0 5.0 3.0 ts tf μ(cid:2)(cid:3)s) 1.0 ME ( 0.7 tr TI t, 0.3 VCC = 30 V 0.2 IC/IB = 250 td IB1 = IB2 0.1 TJ = 25°C 0.07 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 3. Switching Times 1.0 E 0.7 C D = 0.5 N 0.5 A T SIS 0.3 0.2 E R 0.2 L D) AE 0.1 MZ T THERORMALI00.0.17 0.05 ZR(cid:2)(cid:2)JJCC (=t) 1=. 9r2(t°) CR/(cid:2)WJC MAX P(pk) r(t), TRANSIEN(N000...000532 00..0021 SINGLE PULSE DPRTJU EC(pLAUkSD) RE- TV TTIEMCRS EA= A I ANPPT( PpS tkL1H)Y OZ (cid:2)FWJOCNR(t) POWER DUTtY1 CtY2CLE, D = t1/t2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms) Figure 4. Thermal Response http://onsemi.com 3

2N6387, 2N6388 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second S)10 10 (cid:3)s breakdown. Safe operating area curves indicate I − V AMP5.0 dc 50 (cid:3)s limits of the transistor that must be observed forC reliabClEe ENT (2.0 50 ms 1 ms operation; i.e., the transistor must not be subjected to greater R dissipation than the curves indicate. R CUR01..50 TJ = 150°C 5 ms The data of Figure 5 is based on TJ(pk) = 150(cid:2)C; TC is O variable depending on conditions. Second breakdown pulse OLLECT00..21 BTSHEOECNRODMNINADGL B LWRYI ERLAIEMK LIDTIOMEDWIT NE@D L TIMC I=T E1D00°C l<im 15it0s (cid:2)aCre. TvJa(plikd) mfoary dbuet yc aclcyucllaetse dto f r1o0m% t hper doavtiad eind FTigJ(uprke) C I, C CURVES APPLY BELOW RATED VCEO 2N6387 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the 2N6388 0.03 limitations imposed by second breakdown 1.0 2.0 4.0 6.0 10 20 40 60 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active-Region Safe Operating Area 10,000 300 N 5000 TJ = 25°C AI G 3000 200 T 2000 N E F) R 1000 p UR E ( SIGNAL C 532000000 TVCC E= =2 54°.0C Vdc PACITANC 100 Cob MALL- 100 IC = 3.0 Adc C, CA 70 Cib , SE 3500 50 F h 20 10 30 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS) Figure 6. Small−Signal Current Gain Figure 7. Capacitance 20,000 S) 3.0 T VCE = 4.0 V OL TJ = 25°C 10,000 V GE ( 2.6 GAIN 5000 TJ = 150°C OLTA IC = 2.0 A 4.0 A 6.0 A T V C CURREN 32000000 25°C -EMITTER 21..28 D 1000 R , FE -(cid:5)55°C CTO h E 500 LL 1.4 O C 300 , E 200 VC 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA) Figure 8. DC Current Gain Figure 9. Collector Saturation Region http://onsemi.com 4

2N6387, 2N6388 3.0 + 5.0 TJ = 25°C °mV/C)+ 4.0 *IC/IB ≤ hFE(cid:3)@(cid:3)VCE3(cid:3)(cid:4)(cid:3)4.0(cid:3)V LTS) 2.5 NTS (++ 23..00 25°C to 150°C O E V CI LTAGE ( 2.0 COEFFI+ 1.00 *(cid:2)VC for VCE(sat) -(cid:5)55°C to 25°C V, VO 1.5 VBE(sat) @ IC/IB = 250 URE - 1.0 T A - 2.0 VBE @ VCE = 4.0 V ER 25°C to 150°C 1.0 VCE(sat) @ IC/IB = 250 , TEMPV-- 34..00 (cid:2)VB for VBE -(cid:5)55°C to 25°C θ 0.5 - 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients 105 REVERSE FORWARD COLLECTOR A) 104 μ(cid:2)(cid:3) T ( VCE = 30 V EN 103 R R U TOR C 102 TJ = 150°C BASE C LLE 101 (cid:3) 8.0 k (cid:3) 120 O C , C 100 100°C I 25°C 10-(cid:5)1 EMITTER -(cid:5)0.6 -(cid:5)0.4 -(cid:5)0.2 0 +(cid:5)0.2 +(cid:5)0.4 +(cid:5)0.6 +(cid:5)0.8 +(cid:5)1.0 +(cid:5)1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut−Off Region Figure 13. Darlington Schematic http://onsemi.com 5

MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AJ DATE 05 NOV 2019 SCALE 1:1 STYLE 1: STYLE 2: STYLE 3: STYLE 4: PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1 2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2 3. EMITTER 3. COLLECTOR 3. GATE 3. GATE 4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2 STYLE 5: STYLE 6: STYLE 7: STYLE 8: PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE 2. DRAIN 2. CATHODE 2. ANODE 2. ANODE 3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY 4. DRAIN 4. CATHODE 4. ANODE 4. ANODE STYLE 9: STYLE 10: STYLE 11: STYLE 12: PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1 2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2 3. EMITTER 3. DRAIN 3. GATE 3. GATE 4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED Electronic versions are uncontrolled except when accessed directly from the Document Repository. DOCUMENT NUMBER: 98ASB42148B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DESCRIPTION: TO−220 PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

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