2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. www.onsemi.com Features • High DC Current Gain 7 AMPERE • High Current Gain − Bandwidth Product POWER TRANSISTORS • TO−220 Compact Package COMPLEMENTARY SILICON • These Devices are Pb−Free and are RoHS Compliant* 30 − 50 − 70 VOLTS, 40 WATTS MAXIMUM RATINGS (Note 1) PNP NPN Rating Symbol Value Unit COLLECTOR 2, 4 COLLECTOR 2, 4 Collector−Emitter Voltage VCEO Vdc 2N6111, 2N6288 30 2N6109 50 1 1 2N6107, 2N6292 70 BASE BASE Collector−Base Voltage VCB Vdc 2N6111, 2N6288 40 EMITTER 3 EMITTER 3 2N6109 60 2N6107, 2N6292 80 4 Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 7.0 Adc TO−220 Collector Current − Peak ICM 10 Adc CASE 221A STYLE 1 Base Current IB 3.0 Adc Total Power Dissipation PD 1 @ TC = 25(cid:2)C 40 W 2 Derate above 25(cid:2)C 0.32 W/°C 3 Operating and Storage Junction TJ, Tstg −65 to +150 °C MARKING DIAGRAM Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2N6xxxG THERMAL CHARACTERISTICS AYWW Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case R(cid:2)JC 3.125 (cid:2)C/W 2N6xxx = Specific Device Code xxx = See Table on Page 4 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please See detailed ordering, marking, and shipping information in download the ON Semiconductor Soldering and Mounting Techniques the package dimensions section on page 4 of this data sheet. Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 − Rev. 11 2N6107/D

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25(cid:2)C unless otherwise noted) (Note 2) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) VCEO(sus) Vdc (IC = 100 mAdc, IB = 0) 2N6111, 2N6288 30 − 2N6109 50 − 2N6107, 2N6292 70 − Collector Cutoff Current ICEO mAdc (VCE = 20 Vdc, IB = 0) 2N6111, 2N6288 − 1.0 (VCE = 40 Vdc, IB = 0) 2N6109 − 1.0 (VCE = 60 Vdc, IB = 0) 2N6107, 2N6292 − 1.0 Collector Cutoff Current ICEX (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) 2N6111, 2N6288 − 100 (cid:3)Adc (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N6109 − 100 (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N6107, 2N6292 − 100 (VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150(cid:2)C) 2N6111, 2N6288 − 2.0 mAdc (VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150(cid:2)C) 2N6109 − 2.0 (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150(cid:2)C) 2N6107, 2N6292 − 2.0 Emitter Cutoff Current IEBO mAdc (VBE = 5.0 Vdc, IC = 0) − 1.0 ON CHARACTERISTICS (Note 3) DC Current Gain hFE − (IC = 2.0 Adc, VCE = 4.0 Vdc) 2N6107, 2N6292 30 150 (IC = 2.5 Adc, VCE = 4.0 Vdc) 2N6109 30 150 (IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6111, 2N6288 30 150 (IC = 7.0 Adc, VCE = 4.0 Vdc) All Devices 2.3 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 7.0 Adc, IB = 3.0 Adc) − 3.5 Base−Emitter On Voltage VBE(on) Vdc (IC = 7.0 Adc, VCE = 4.0 Vdc) − 3.0 DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 4) fT MHz (IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz) 2N6288, 2N6292 4.0 − 2N6107, 2N6109, 2N6111 10 − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) − 250 Small−Signal Current Gain hfe − (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz) 20 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width ≤300(cid:3)s, Duty Cycle ≤2.0%. 4. fT = |hfe| • ftest http://onsemi.com 2

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) 40 S) T AT 30 W N ( O TI A SIP 20 S DI R E W O 10 P , D P 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating VCC +(cid:2)30 V 2.0 25 (cid:3)s RC 10..07 VTJC C= =2 53°0C V +11 V SCOPE 0.5 IC/IB = 10 RB 0 51 D1 μME ((cid:3)(cid:4)s) 00..32 tr TI -(cid:2)9.0 V t, 0.1 tr, tf ≤ 10 ns -(cid:2)4 V 0.07 td @ VBE(off) ≈ 5.0 V DUTY CYCLE = 1.0% 0.05 RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.03 D1 MUST BE FAST RECOVERY TYPE, eg: 0.02 1N5825 USED ABOVE IB ≈ 100 mA 0.07 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 7.0 MSD6100 USED BELOW IB ≈ 100 mA IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Time Test Circuit Figure 3. Turn−On Time D) E Z 1.0 LI A 0.7 M D = 0.5 R 0.5 O N E ( 0.3 C 0.2 AN 0.2 T S SI 0.1 MAL RE00.0.17 0.05 ZR(cid:2)(cid:2)JJCC( t=) =3 .r1(t2) 5R°(cid:2)CJ/CW MAX P(pk) R0.05 D CURVES APPLY FOR POWER SIENT THE00..0023 0.02 0.01 PRTJUE(pLAkSD) E- T TTIMCR EA= I ANPT( pS tk1H) OZ(cid:2)WJCN(t) DUTtY1 CtY2CLE, D = t1/t2 AN SINGLE PULSE R0.01 r(t), T 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.t0, TIME (ms5).0 10 20 50 100 200 500 1.0 k Figure 4. Thermal Response http://onsemi.com 3

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) 15 There are two limitations on the power handling ability of 0.1 ms 10 a transistor: average junction temperature and second MPS)7.0 0.5 ms breakdown. Safe operating area curves indicate IC − VCE T (A5.0 limits of the transistor that must be observed for reliable EN3.0 dc operation; i.e., the transistor must not be subjected to greater R UR2.0 0.1 dissipation than the curves indicate. R C ms The data of Figure 5 is based on TJ(pk) = 150(cid:2)C; TC is TO1.0 CURRENT LIMIT variable depending on conditions. Second breakdown C E0.7 SECONDARY pulse limits are valid for duty cycles to 10% provided L OL0.5 BREAKDOWN LIMIT 5.0 ms T ≤ 150(cid:2)C. T may be calculated from the data in I, CC0.3 T@H TECR M= A25L° LCIM (SITINGLE PULSE) FiJg(pukr)e 4. At high cJa(pske) temperatures, thermal limitations will 0.2 reduce the power that can be handled to values less than the 0.15 limitations imposed by second breakdown. 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active−Region Safe Operating Area 5.0 300 3.0 TJ = 25°C 2.0 VCC = 30 V 200 TJ = 25°C μ(cid:3)(cid:4)s) 10..07 ts IICB1/I B= =IB 120 NCE (pF) Cib E ( 0.5 TA 100 M CI t, TI 0.3 tr CAPA 70 Cob 0.2 C, 50 0.1 0.07 0.05 30 0.07 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 7.0 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn−Off Time Figure 7. Capacitance ORDERING INFORMATION Device Device Marking Package Shipping 2N6107G 2N6107 TO−220 50 Units / Rail (Pb−Free) 2N6109G 2N6109 TO−220 50 Units / Rail (Pb−Free) 2N6111G 2N6111 TO−220 50 Units / Rail (Pb−Free) 2N6288G 2N6288 TO−220 50 Units / Rail (Pb−Free) 2N6292G 2N6292 TO−220 50 Units / Rail (Pb−Free) http://onsemi.com 4

MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AJ DATE 05 NOV 2019 SCALE 1:1 STYLE 1: STYLE 2: STYLE 3: STYLE 4: PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1 2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2 3. EMITTER 3. COLLECTOR 3. GATE 3. GATE 4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2 STYLE 5: STYLE 6: STYLE 7: STYLE 8: PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE 2. DRAIN 2. CATHODE 2. ANODE 2. ANODE 3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY 4. DRAIN 4. CATHODE 4. ANODE 4. ANODE STYLE 9: STYLE 10: STYLE 11: STYLE 12: PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1 2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2 3. EMITTER 3. DRAIN 3. GATE 3. GATE 4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED Electronic versions are uncontrolled except when accessed directly from the Document Repository. DOCUMENT NUMBER: 98ASB42148B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DESCRIPTION: TO−220 PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: TECHNICAL SUPPORT Email Requests to: orderlit@onsemi.com North American Technical Support: Europe, Middle East and Africa Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 ON Semiconductor Website: www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ www.onsemi.com 1