2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. http://onsemi.com Features 20 AMPERE • High DC Current Gain @ I = 10 Adc − C COMPLEMENTARY SILICON h = 2400 (Typ) − 2N6284 FE POWER TRANSISTORS = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − 100 VOLTS, 160 WATTS VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors COLLECTOR • CASE Pb−Free Packages are Available* BASE 1 MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit EMITTER 2 Collector−Emitter Voltage VCEO Vdc 2N6286 80 2N6284/87 100 MARKING DIAGRAM Collector−Base Voltage VCB Vdc 2N6286 80 2N6284/87 100 1 2N628xG Emitter−Base Voltage VEB 5.0 Vdc 2 AYYWW Collector Current − Continuous IC 20 Adc TO−204AA (TO−3) MEX Peak 40 CASE 1−07 STYLE 1 Base Current IB 0.5 Adc Total Power Dissipation @ TC = 25°C PD 160 W 2N628x = Device Code Derate above 25°C 0.915 W/°C x = 4, 6 or 7 Operating and Storage Temperature TJ, Tstg −65 to +200 °C G = Pb−Free Package Range A = Location Code YY = Year THERMAL CHARACTERISTICS (Note 1) WW = Work Week MEX = Country of Orgin Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R(cid:2)JC 1.09 °C/W ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Device Package Shipping Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. 2N6284 TO−3 100 Units/Tray 2N6284G TO−3 100 Units/Tray (Pb−Free) 2N6286 TO−3 100 Units/Tray 2N6286G TO−3 100 Units/Tray (Pb−Free) 2N6287 TO−3 100 Units/Tray *For additional information on our Pb−Free strategy and soldering details, please 2N6287G TO−3 100 Units/Tray download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free) Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: September, 2008 − Rev. 4 2N6284/D

2N6284 (NPN); 2N6286, 2N6287 (PNP) 160 140 S) T T A 120 W ON ( 100 TI A SIP 80 S DI R 60 E W O 40 P , D P 20 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25(cid:2)C unless otherwise noted) (Note 2) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage VCEO(sus) Vdc ÎÎÎÎ(ICÎ = 0Î.1 AdÎc, IBÎ = 0Î) ÎÎÎÎÎÎÎÎÎÎÎ2NÎ6286ÎÎÎÎÎÎÎÎ80 ÎÎÎ−ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2NÎÎ6284ÎÎ, 2NÎÎ6287ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1ÎÎ00 ÎÎÎÎÎÎ−ÎÎÎÎÎÎÎÎÎÎ ÎÎColÎlectoÎr CuÎtoff CÎurreÎnt ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICÎEOÎÎÎÎÎÎÎÎÎÎmÎAdcÎ (VCE = 40 Vdc, IB = 0) − 1.0 ÎÎÎÎÎÎÎÎ(VÎÎCE =ÎÎ 50 VÎÎdc,ÎÎ IB =ÎÎ 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− ÎÎÎÎÎÎ1.ÎÎ0 ÎÎÎÎÎÎÎÎ ÎÎColÎlectoÎr CuÎtoff CÎurreÎnt ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICÎEX ÎÎÎÎÎÎÎÎÎÎmÎAdcÎ (VCE = Rated VCB, VBE(off) = 1.5 Vdc) − 0.5 ÎÎÎÎ(VÎCE =Î RatÎed VÎCB, ÎVBE(Îoff) =Î 1.5Î VdcÎ, TC Î= 15Î0(cid:2)CÎ) ÎÎÎÎÎÎÎÎÎÎÎÎÎ− ÎÎÎ5.Î0 ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current IEBO − 2.0 mAdc ÎÎÎÎÎÎÎÎ(VÎÎBE =ÎÎ 5.0 ÎÎVdcÎÎ, IC =ÎÎ 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎON ÎÎCHAÎÎRACÎÎTERÎÎISTÎÎICSÎÎ (NoÎÎte 3)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎDC ÎCurrÎent GÎainÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎhÎFE ÎÎÎÎÎÎÎÎÎÎÎ− Î (IC = 10 Adc, VCE = 3.0 Vdc) 750 18,000 ÎÎÎÎÎÎÎÎ(ICÎÎ = 2ÎÎ0 AdÎÎc, VÎÎCE =ÎÎ 3.0 ÎÎVdc)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1ÎÎ00 ÎÎÎÎÎÎ−ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage VCE(sat) Vdc ÎÎÎÎ(ICÎ = 1Î0 AdÎc, IBÎ = 40Î mAÎdc)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− ÎÎÎ2.Î0 ÎÎÎÎ (IC = 20 Adc, IB = 200 mAdc) − 3.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter On Voltage VBE(on) − 2.8 Vdc ÎÎÎÎÎÎÎÎ(ICÎÎ = 1ÎÎ0 AdÎÎc, VÎÎCE =ÎÎ 3.0 ÎÎVdc)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎBasÎe−EÎmitteÎr SaÎturaÎtion ÎVoltaÎge ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVBÎE(satÎ) ÎÎÎ− ÎÎÎ4.Î0 ÎÎÎVdcÎ ÎÎÎÎÎÎÎÎ(ICÎÎ = 2ÎÎ0 AdÎÎc, IBÎÎ = 20ÎÎ0 mÎÎAdcÎÎ) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎDYNÎÎAMÎÎIC CÎÎHARÎÎACTÎÎERÎÎISTICÎÎS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎMagÎnituÎde oÎf CoÎmmoÎn EmÎitteÎr SmÎall−SÎignÎal ShÎort−ÎCircÎuit ÎÎÎÎÎÎÎÎÎ|hÎfe| ÎÎÎÎ4.0 ÎÎÎ−ÎÎÎÎMHzÎ Forward Current Transfer Ratio ÎÎÎÎÎÎÎÎ(ICÎÎ = 1ÎÎ0 AdÎÎc, VÎÎCE =ÎÎ 3.0 ÎÎVdc,ÎÎ f = ÎÎ1.0 MÎÎHz)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎOutÎput CÎapaÎcitanÎceÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCÎob ÎÎÎÎÎÎÎÎÎÎÎpFÎ (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6284 − 400 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2NÎÎ6286ÎÎ, 2NÎÎ6287ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− ÎÎÎÎÎÎ60ÎÎ0 ÎÎÎÎÎÎÎÎ ÎÎSmÎall−SÎignaÎl CuÎrrentÎ GaiÎn ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎhÎfe ÎÎÎ3Î00 ÎÎÎ−ÎÎÎÎ− Î ÎÎÎÎ(ICÎ = 1Î0 AdÎc, VÎCE =Î 3.0 ÎVdc,Î f = Î1.0 kÎHz)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. Indicates JEDEC Registered Data. 3. Pulse test: Pulse Width = 300 (cid:3)s, Duty Cycle = 2% http://onsemi.com 2

2N6284 (NPN); 2N6286, 2N6287 (PNP) VCC RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS - 30 V D1 MUST BE FAST RECOVERY TYPE e.g., (cid:4)1N5825 USED ABOVE IB (cid:3) 100 mA RC (cid:4)MSD6100 USED BELOW IB (cid:3) 100 mA SCOPE TUT V2 RB APPROX + 8.0 V 51 D1 (cid:3) 8.0 k (cid:3) 50 0 V1 + 4.0 V APPROX 25 (cid:3)s FOR td AND tr, D1 IS DISCONNECTED - 12 V tr, tf (cid:2) 10 ns FAONDR VN2P N= 0TEST CIRCUIT REVERSE ALL POLARITIES DUTY CYCLE = 1.0% Figure 2. Switching Times Test Circuit 10 7.0 ts 2N6284 (NPN) 2N6287 (PNP) 5.0 3.0 2.0 μ(cid:2)(cid:3)s) tf tr E ( 1.0 M TI 0.7 t, 0.5 0.3 VCC = 30 Vdc 0.2 IC/IB = 250 IB1 = IB2 0.1 TJ = 25°C td @ VBE(off) = 0 V 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) Figure 3. Switching Times 1.0 D) 0.7 E D = 0.5 NTALIZ 0.5 EM SIR 0.3 0.2 NO TRAE (N 0.2 0.1 FECTIVE SISTANC00.0.17 00..0052 RR(cid:2)(cid:2)JJCC( =t) 1=. 0r(9t)° CR/(cid:2)WJC MAX P(pk) EFRE0.05 D CURVES APPLY FOR POWER r(t), RMAL 0.03 0.01 PRUELASDE T TIMREA IANT S t1HOWN t1 t2 E TH0.02 SINGLE PULSE TJ(pk) - TC = P(pk) R(cid:2)JC(t) DUTY CYCLE, D = t1/t2 0.01 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response http://onsemi.com 3

2N6284 (NPN); 2N6286, 2N6287 (PNP) ACTIVE−REGION SAFE OPERATING AREA 50 There are two limitations on the power handling ability of 0.1 ms a transistor: average junction temperature and second 20 P) 0.5 ms breakdown. Safe operating area curves indicate IC − VCE M 10 T (A 1.0 ms limits of the transistor that must be observed for reliable N 5.0 operation; i.e. the transistor must not be subjected to greater E RR 5.0 ms dissipation than the curves indicate. CU 2.0 dc The data of Figure 5 is based on T = 200(cid:2)C; T is OR 1.0 TJ = 200°C variable depending on conditions. SecoJ(npdk )breakdown puClse T C E 0.5 limits are valid for duty cycles to 10% provided L COL 0.2 SECOND BREAKDOWN LIMITED TJ(pk) < 200(cid:2)C. TJ(pk) may be calculated from the data in , C BONDING WIRE LIMITED Figure 4. At high case temperatures, thermal limitations will I 0.1 THERMAL LIMITATION @ TC = 25°C reduce the power that can be handled to values less than the (cid:4)SINGLE PULSE 0.05 limitations imposed by second breakdown. 2.0 5.0 10 20 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. 2N6284, 2N6287 10,000 N 5000 TJ = 25°C GAI VCE = 3.0 Vdc NT 2000 IC = 10 A E R 1000 R U L C 500 A N G 200 SI - LL 100 A M S 50 , E F 2N6284 (NPN) h 20 2N6287 (PNP) 10 1.0 2.0 5.0 10 20 50 100 200 500 1000 f, FREQUENCY (kHz) Figure 6. Small−Signal Current Gain 1000 TJ = 25°C 700 F) 500 P E ( C N TA 300 Cib CI A P CA Cob C, 200 2N6284 (NPN) 2N6287 (PNP) 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4

2N6284 (NPN); 2N6286, 2N6287 (PNP) NPN PNP 2N6284 2N6287 20,000 30,000 VCE = 3.0 V 20,000 VCE = 3.0 V 10,000 N 7000 TJ = 150°C N10,000 TJ = 150°C GAI 5000 GAI 7000 T T 5000 N N E 3000 E 25°C RR 2000 25°C RR 3000 U U C C C C 2000 D 1000 D , E -(cid:5)55°C , E -(cid:5)55°C F 700 F 1000 h h 500 700 500 300 200 300 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 8. DC Current Gain S) 3.0 S) 3.0 T T OL TJ = 25°C OL TJ = 25°C V V TAGE ( 2.6 IC = 5.0 A 10 A 15 A TAGE ( 2.6 IC = 5.0 A 10 A 15 A L L O O V V R 2.2 R 2.2 E E T T T T MI MI E E R‐ 1.8 R‐ 1.8 O O T T C C E E L L L 1.4 L 1.4 O O C C , E , E C C V 1.0 V 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 9. Collector Saturation Region 3.0 3.0 TJ = 25°C TJ = 25°C 2.5 2.5 S) S) T T L L O O V V E ( 2.0 E ( 2.0 G G A A T T OL VBE(sat) @ IC/IB = 250 OL V, V 1.5 V, V 1.5 VBE(sat) @ IC/IB = 250 1.0 VBE @ VCE = 3.0 V 1.0 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages http://onsemi.com 5

2N6284 (NPN); 2N6286, 2N6287 (PNP) NPN PNP 2N6284 2N6287 +(cid:5)5.0 +(cid:5)5.0 °S (mV/C) ++(cid:5)(cid:5)43..00 *APPLIES FOR IC/IB ≤ hFE(cid:3)@(cid:3)VC2E50(cid:3)(cid:4)(cid:3)3.0(cid:3)V °S (mV/C) ++(cid:5)(cid:5)43..00 *APPLIES FOR IC/IB ≤ hFE(cid:3)@(cid:3)VC2E50(cid:3)(cid:4)(cid:3)3.0(cid:3)V T T CIEN +(cid:5)2.0 25°C to 150°C CIEN +(cid:5)2.0 25°C to 150°C FFI +(cid:5)1.0 FFI +(cid:5)1.0 -(cid:5)55°C to + 25°C OE 0 -(cid:5)55°C to + 25°C OE 0 C C E E TUR -(cid:5)1.0 *(cid:2)VC for VCE(sat) TUR -(cid:5)1.0 *(cid:2)VC for VCE(sat) A -(cid:5)2.0 A -(cid:5)2.0 EMPER -(cid:5)3.0 (cid:2)VB for VBE 25°C to + 150°C EMPER -(cid:5)3.0 (cid:2)VB for VBE 25°C to + 150°C , TV -(cid:5)4.0 -(cid:5)55°C to + 25°C , TV -(cid:5)4.0 -(cid:5)55°C to + 25°C θ θ -(cid:5)5.0 -(cid:5)5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 105 103 A) 104 VCE = 30 V A) 102 VCE = 30 V μT ((cid:2)(cid:3) μT ((cid:2)(cid:3) TJ = 150°C EN 103 EN 101 RR TJ = 150°C RR U U OR C 102 100°C OR C 100 100°C T T C C LE 101 LE 10-1 OL REVERSE FORWARD OL REVERSE FORWARD C C , C 100 , C 10-2 25°C I I 25°C 10-1 10-3 -(cid:5)0.6-(cid:5)0.4 -(cid:5)0.2 0 +(cid:5)0.2 +(cid:5)0.4 +(cid:5)0.6 +(cid:5)0.8 +(cid:5)1.0 +(cid:5)1.2 + 1.4 +(cid:5)0.6+(cid:5)0.4 +(cid:5)0.2 0 -(cid:5)0.2 -(cid:5)0.4 -(cid:5)0.6 -(cid:5)0.8 -(cid:5)1.0 -(cid:5)1.2 -(cid:5)1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut−Off Region COLLECTOR COLLECTOR NPN PNP 2N6284 2N6287 BASE BASE (cid:3) 8.0 k (cid:3) 60 (cid:3) 8.0 k (cid:3) 60 EMITTER EMITTER Figure 13. Darlington Schematic http://onsemi.com 6

2N6284 (NPN); 2N6286, 2N6287 (PNP) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z A NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI N Y14.5M, 1982. 2.CONTROLLING DIMENSION: INCH. C 3.ALL RULES AND NOTES ASSOCIATED WITH −T− SEATING REFERENCED TO-204AA OUTLINE SHALL APPLY. PLANE E INCHES MILLIMETERS D 2 PL K DIM MIN MAX MIN MAX A 1.550 REF 39.37 REF 0.13 (0.005) M T Q M Y M B --- 1.050 --- 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 U −Y− E 0.055 0.070 1.40 1.77 V L G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC 2 K 0.440 0.480 11.18 12.19 G B L 0.665 BSC 16.89 BSC H N --- 0.830 --- 21.08 1 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC −Q− V 0.131 0.188 3.33 4.77 0.13 (0.005) M T Y M STYLE 1: PIN 1.BASE 2.EMITTER CASE:COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com 2N6284/D 7

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: 2N6284 2N6284G 2N6286 2N6286G 2N6287 2N6287G