ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > 2N6109
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2N6109产品简介:
ICGOO电子元器件商城为您提供2N6109由Central Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2N6109价格参考¥4.65-¥7.79。Central Semiconductor2N6109封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP 50V 7A 10MHz 40W 通孔 TO-220AB。您可以下载2N6109参考资料、Datasheet数据手册功能说明书,资料中有2N6109 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
品牌 | Central Semiconductor |
产品目录 | 半导体 |
描述 | 两极晶体管 - BJT PNP Med Power |
产品分类 | 分离式半导体 |
产品手册 | |
产品图片 | |
rohs | 符合RoHS |
产品系列 | 晶体管,两极晶体管 - BJT,Central Semiconductor 2N6109 |
产品型号 | 2N6109 |
产品种类 | 两极晶体管 - BJT |
发射极-基极电压VEBO | 5 V |
商标 | Central Semiconductor |
增益带宽产品fT | 10 MHz |
安装风格 | Through Hole |
封装 | Bulk |
封装/箱体 | TO-220 |
工厂包装数量 | 400 |
晶体管极性 | PNP |
最大功率耗散 | 40 W |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 7 A |
最小工作温度 | - 65 C |
直流集电极/BaseGainhfeMin | 30 |
系列 | 2N6109 |
配置 | Single |
集电极—发射极最大电压VCEO | 50 V |
集电极—基极电压VCBO | 60 V |
集电极—射极饱和电压 | 3.5 V |
集电极连续电流 | 0.45 A |
2N6107 2N6109 2N6111 PNP 2N6288 2N6290 2N6292 NPN www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE 2N6111 2N6109 2N6107 MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6288 2N6290 2N6292 UNITS Collector-Base Voltage VCBO 40 60 80 V Collector-Emitter Voltage VCEO 30 50 70 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 7.0 A Peak Collector Current ICM 10 A Continuous Base Current IB 3.0 A Power Dissipation PD 40 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 3.13 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEV VCE=Rated VCEO, VEB=1.5V 100 μA ICEV VCE=Rated VCEO, VEB=1.5V, TC=150°C 2.0 mA ICEO VCE=20V (2N6111, 2N6288) 1.0 mA ICEO VCE=40V (2N6109, 2N6290) 1.0 mA ICEO VCE=60V (2N6107, 2N6292) 1.0 mA IEBO VEB=5.0V 1.0 mA BVCEO IC=100mA (2N6111, 2N6288) 30 V BVCEO IC=100mA (2N6109, 2N6290) 50 V BVCEO IC=100mA (2N6107, 2N6292) 70 V VCE(SAT) IC=7.0A, IB=3.0A 3.5 V VBE(ON) VCE=4.0V, IC=7.0A 3.0 V hFE VCE=4.0V, IC=2.0A (2N6107, 2N6292) 30 150 hFE VCE=4.0V, IC=2.5A (2N6109, 2N6290) 30 150 hFE VCE=4.0V, IC=3.0A (2N6111, 2N6288) 30 150 hFE VCE=4.0V, IC=7.0A 2.3 hfe VCE=4.0V, IC=0.5A, f=50kHz 20 fT VCE=4.0V, IC=0.5A, f=1.0MHz 4.0 MHz Cob VCB=10V, IE=0, f=1.0MHz 250 pF R1 (10-April 2013)
2N6107 2N6109 2N6111 PNP 2N6288 2N6290 2N6292 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R1 (10-April 2013) www.centralsemi.com
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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: C entral Semiconductor: 2N6288 2N6107 2N6109 2N6290 2N6292