2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: DARLINGTON POWER The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 TRANSISTORS series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE 2N6050 2N6051 2N6052 MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6057 2N6058 2N6059 UNITS Collector-Base Voltage VCBO 60 80 100 V Collector-Emitter Voltage VCEO 60 80 100 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 12 A Peak Collector Current ICM 20 A Continuous Base Current IB 0.2 A Power Dissipation PD 150 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance JC 1.17 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEV VCE=Rated VCEO, VEB=1.5V 0.5 mA ICEV VCE=Rated VCEO, VEB=1.5V, TC=150°C 5.0 mA ICEO VCE=½Rated VCEO 1.0 mA IEBO VEB=5.0V 2.0 mA BVCEO IC=100mA, (2N6050, 2N6057) 60 V BVCEO IC=100mA, (2N6051, 2N6058) 80 V BVCEO IC=100mA, (2N6052, 2N6059) 100 V VCE(SAT) IC=6.0A, IB=24mA 2.0 V VCE(SAT) IC=12A, IB=120mA 3.0 V VBE(SAT) IC=12A, IB=120mA 4.0 V VBE(ON) VCE=3.0V, IC=6.0A 2.8 V hFE VCE=3.0V, IC=6.0A 750 18K hFE VCE=3.0V, IC=12A 100 hfe VCE=3.0V, IC=5.0A, f=1.0kHz 300 fT VCE=3.0V, IC=5.0A, f=1.0MHz 4.0 MHz Cob VCB=10V, IE=0, f=100kHz (PNP types) 500 pF Cob VCB=10V, IE=0, f=100kHz (NPN types) 300 pF R1 (18-September 2012)

2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (18-September 2012) www.centralsemi.com

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