PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features • POWER TRANSISTORS High DC Current Gain − h = 2500 (Typ) @ I = 4.0 Adc FE C • 60 − 100 VOLTS, 75 WATTS Collector−Emitter Sustaining Voltage − @ 100 mAdc − V = 60 Vdc (Min) − 2N6040, 2N6043 CEO(sus) = 100 Vdc (Min) − 2N6042, 2N6045 • Low Collector−Emitter Saturation Voltage − V = 2.0 Vdc (Max) @ I = 4.0 Adc − 2N6043,44 CE(sat) C = 2.0 Vdc (Max) @ I = 3.0 Adc − 2N6042, 2N6045 C • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V • These Devices are Pb−Free and are RoHS Compliant* TO−220 CASE 221A STYLE 1 MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit MARKING DIAGRAM Collector−Emitter Voltage 2N6040 VCEO 60 Vdc 2N6043 2N6042 100 2N6045 Collector−Base Voltage 2N6040 VCB 60 Vdc 2N6043 2N6042 100 2N604xG 2N6045 AYWW Emitter−Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 8.0 Adc Peak 16 Base Current IB 120 mAdc Total Power Dissipation @ TC = 25°C PD 75 W 2N604x =Device Code Derate above 25°C 0.60 W/°C x = 0, 2, 3, or 5 A = Assembly Location Operating and Storage Junction TJ, Tstg –65 to +150 °C Y = Year Temperature Range WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the G = Pb−Free Package device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 − Rev. 10 2N6040/D

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCÎÎharaÎÎcterÎÎisticÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymÎÎbolÎÎÎÎÎÎÎÎMÎÎax ÎÎÎÎÎÎÎÎUniÎÎt Thermal Resistance, Junction−to−Case (cid:2) 1.67 °C/W ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJÎÎC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Ambient (cid:2) 57 °C/W ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJÎA ÎÎÎÎÎÎÎÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage VCEO(sus) Vdc (IC = 100 mAdc, IB = 0) 2N6040, 2N6043 60 − 2N6042, 2N6045 100 − Collector Cutoff Current ICEO (cid:3)A (VCE = 60 Vdc, IB = 0) 2N6040, 2N6043 − 20 (VCE = 100 Vdc, IB = 0) 2N6042, 2N6045 − 20 Collector Cutoff Current ICEX (cid:3)A (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6040, 2N6043 − 20 (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) 2N6042, 2N6045 − 20 (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N6040, 2N6043 − 200 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N6041, 2N6044 − 200 (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N6042, 2N6045 − 200 Collector Cutoff Current ICBO (cid:3)A (VCB = 60 Vdc, IE = 0) 2N6040, 2N6043 − 20 (VCB = 100 Vdc, IE = 0) 2N6042, 2N6045 − 20 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 2.0 mAdc ON CHARACTERISTICS DC Current Gain hFE − (IC = 4.0 Adc, VCE = 4.0 Vdc) 2N6040, 2N6043, 1000 20.000 (IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6042, 2N6045 1000 20,000 (IC = 8.0 Adc, VCE = 4.0 Vdc) All Types 100 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 4.0 Adc, IB = 16 mAdc) 2N6040, 2N6043, − 2.0 (IC = 3.0 Adc, IB = 12 mAdc) 2N6042, 2N6045 − 2.0 (IC = 8.0 Adc, IB = 80 Adc) All Types − 4.0 Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) VBE(sat) − 4.5 Vdc Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.8 Vdc DYNAMIC CHARACTERISTICS Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) |hfe| 4.0 − Output Capacitance 2N6040/2N6042 Cob − 300 pF (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6043/2N6045 − 200 Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 300 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data. http://onsemi.com 2

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045 TA TC 4.0 80 S) T T A 3.0 60 W N ( O SIPATI 2.0 40 TC S DI R WE TA O 1.0 20 P , D P 0 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C) Figure 1. Power Derating 5.0 3.0 ts RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -V(cid:4)3C0C V 2.0 D1 MUST BE FAST RECOVERY TYPE, eg: (cid:2)(cid:2)1MNS5D862150 U0 SUESDE DA BBOEVLEO WIB ≈IB 1≈0 100 m0A mA TUTRC SCOPE μ(cid:2)(cid:3)s) 10..07 tf V2 RB ME ( 0.5 approx TI +(cid:4)8.0 V 51 D1 ≈ 8.0 k ≈(cid:3)120 t, 00..32 VCC = 30 V tr 0 IC/IB = 250 apVp1rox +(cid:4)4.0 V 0.1 ITBJ1 == 2IB52°C -12 V 25 (cid:3)s for td and tr, D1 is disconnected 0.07 PNNPPN td @ VBE(off) = 0 V tr, tf ≤ 10 ns aFnodr NVP2 N= t0est circuit reverse all polarities and D1. 0.050.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 DUTY CYCLE = 1.0% IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Times Equivalent Circuit Figure 3. Switching Times 1.0 D) 0.7 D = 0.5 E Z 0.5 r(t), EFFECTIVE TRANSIENTRMAL RESISTANCE (NORMALI000000...000...213573 S00IN..00G52L00E..21 PULSE 0.01 (cid:2)(cid:2)DPRTJJJU EC(CCpLA( Uk=StD)) R E- 1=TV . TT6IrEM(CR7tS) °EA = C(cid:2)A I ANPJ/PWTC( PpS tkL1H)Y (cid:2)O FJWCO(NtR) POWER P(pk)DUTtY1 CtY2CLE, D = t1/t2 E0.02 H T 0.01 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response http://onsemi.com 3

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045 20 There are two limitations on the power handling ability of 100 (cid:3)s 10 a transistor: average junction temperature and second P) breakdown. Safe operating area curves indicate I − V M5.0 C CE T (A 5001 .(cid:3)0(cid:3)sms limits of the transistor that must be observed for reliable URREN21..00 BTOJ N= D1I5N0G°C WIRE LIM5.I0T(cid:3)EmDs dc odipsesriaptaitoino;n i .teh.a, nth teh etr acnusrivsetosr i nmduiscta nteo.t be subjected to greater OR C0.5 THERMALLY LIMITED @ TC = 25°C The data of Figure 5 is based on TJ(pk) = 150°C; TC is T (SINGLE PULSE) variable depending on conditions. Second breakdown pulse C LE0.2 SECOND BREAKDOWN LIMITED limits are valid for duty cycles to 10% provided TJ(pk) COL0.1 CURVES APPLY BELOW RATED VCEO < 150°C. TJ(pk) may be calculated from the data in Figure 4. , C 2N6040, 2N6043 At high case temperatures, thermal limitations will reduce I0.05 2N6045 the power that can be handled to values less than the 0.02 limitations imposed by second breakdown. 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active−Region Safe Operating Area 10,000 300 N 5000 TJ = 25°C GAI 3000 200 T 2000 N E F) R 1000 p MALL-SIGNAL CUR 532100000000 TVICCC = E= 3 =2. 054 °.A0C dVcdc C, CAPACITANCE (17000 Cib Cob h, Sfe 532000 PNNPPN 50 PNP NPN 100 10 30 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS) Figure 6. Small−Signal Current Gain Figure 7. Capacitance PNP NPN 2N6040, 2N6042 2N6043, 2N6045 20,000 20,000 VCE = 4.0 V VCE = 4.0 V 10,000 10,000 N 7000 N 7000 T GAI 5000 TJ = 150°C T GAI 5000 TJ = 150°C EN 3000 EN 3000 R R UR 2000 25°C UR 2000 C C C C 25°C , DE1000 , DE1000 F 700 F 700 h 500 -(cid:4)55°C h 500 -(cid:4)55°C 300 300 200 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 8. DC Current Gain http://onsemi.com 4

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045 S) 3.0 S) 3.0 T T VOL TJ = 25°C VOL TJ = 25°C E ( 2.6 E ( 2.6 G G A A OLT IC = 2.0 A 4.0 A 6.0 A OLT IC = 2.0 A 4.0 A 6.0 A V V R 2.2 R 2.2 E E T T T T MI MI -E 1.8 -E 1.8 R R O O T T C C E E L 1.4 L 1.4 L L O O C C , E , E C C V 1.0 V 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 9. Collector Saturation Region 3.0 3.0 TJ = 25°C TJ = 25°C 2.5 2.5 S) S) T T L L O 2.0 O 2.0 V V E ( E ( G G A A OLT 1.5 VBE @ VCE = 4.0 V OLT 1.5 VBE(sat) @ IC/IB = 250 V V V, V, VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 1.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.010 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages ORDERING INFORMATION Device Package Shipping 2N6040G TO−220 50 Units / Rail (Pb−Free) 2N6042G TO−220 50 Units / Rail (Pb−Free) 2N6043G TO−220 50 Units / Rail (Pb−Free) 2N6045G TO−220 50 Units / Rail (Pb−Free) http://onsemi.com 5

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. −T− SPELAATNIENG 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL B F C BODY AND LEAD IRREGULARITIES ARE T S ALLOWED. INCHES MILLIMETERS 4 DIM MIN MAX MIN MAX A 0.570 0.620 14.48 15.75 Q A B 0.380 0.415 9.66 10.53 C 0.160 0.190 4.07 4.83 1 2 3 U D 0.025 0.038 0.64 0.96 F 0.142 0.161 3.61 4.09 H G 0.095 0.105 2.42 2.66 H 0.110 0.161 2.80 4.10 K J 0.014 0.024 0.36 0.61 Z K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 L R Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 V J S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 G U 0.000 0.050 0.00 1.27 D V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 N STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com 2N6040/D 6