2N6034 2N6035 2N6036 PNP 2N6037 2N6038 2N6039 NPN www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: DARLINGTON POWER The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 TRANSISTORS series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) 2N6034 2N6035 2N6036 SYMBOL 2N6037 2N6038 2N6039 UNITS Collector-Base Voltage VCBO 40 60 80 V Collector-Emitter Voltage VCEO 40 60 80 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 4.0 A Peak Collector Current ICM 8.0 A Continuous Base Current IB 100 mA Power Dissipation PD 40 W Power Dissipation (TA=25°C) PD 1.5 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 83.3 °C/W Thermal Resistance ΘJC 3.12 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=Rated VCBO 500 μA ICEV VCE=Rated VCEO, VBE=1.5V 100 μA ICEV VCE=Rated VCEO, VBE=1.5V, TC=125°C 500 μA ICEO VCE=Rated VCEO 100 μA IEBO VEB=5.0V 2.0 mA BVCEO IC=100mA (2N6034, 2N6037) 40 V BVCEO IC=100mA (2N6035, 2N6038) 60 V BVCEO IC=100mA (2N6036, 2N6039) 80 V VCE(SAT) IC=2.0A, IB=8.0mA 2.0 V VCE(SAT) IC=4.0A, IB=40mA 3.0 V VBE(SAT) IC=4.0A, IB=40mA 4.0 V VBE(ON) VCE=3.0V, IC=2.0A 2.8 V hFE VCE=3.0V, IC=500mA 500 hFE VCE=3.0V, IC=2.0A 750 15K hFE VCE=3.0V, IC=4.0A 100 fT VCE=10V, IC=750mA, f=1.0MHz 25 MHz Cob VCB=10V, IE=0, f=100kHz (PNP) 200 pF Cob VCB=10V, IE=0, f=100kHz (NPN) 100 pF R1 (12-March 2014)

2N6034 2N6035 2N6036 PNP 2N6037 2N6038 2N6039 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (12-March 2014) www.centralsemi.com

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