2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G,(cid:2)2N6039G (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com 4.0 AMPERES DARLINGTON Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching COMPLEMENTARY SILICON applications. POWER TRANSISTORS Features 40, 60, 80 VOLTS, 40 WATTS • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V NPN PNP • Epoxy Meets UL 94 V−0 @ 0.125 in COLLECTOR 2, 4 COLLECTOR 2, 4 • These Devices are Pb−Free and are RoHS Compliant* BASE BASE 3 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO Vdc EMITTER 1 EMITTER 1 2N6034G 40 2N6035G, 2N6038G 60 2N6038 2N6034 2N6036G, 2N6039G 80 2N6039 2N6035 2N6036 Collector−Base Voltage VCBO Vdc 2N6034G 40 2N6035G, 2N6038G 60 2N6036G, 2N6039G 80 Emitter−Base Voltage VEBO 5.0 Vdc TO−225 Collector Current − Continuous IC 4.0 Adc CASE 77−09 STYLE 1 Collector Current − Peak ICM 8.0 Apk Base Current IB 100 mAdc 1 2 3 Total Device Dissipation PD @ TC = 25°C 40 W Derate above 25°C 320 mW/°C MARKING DIAGRAM Total Device Dissipation PD @ TC = 25°C 1.5 W Derate above 25°C 12 mW/°C YWW 2 Operating and Storage Junction TJ, Tstg –65 to +150 °C N603xG Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Y =Year assumed, damage may occur and reliability may be affected. WW =Work Week 2N603x =Device Code THERMAL CHARACTERISTICS x = 4, 5, 6, 8, 9 Characteristic Symbol Max Unit G =Pb−Free Package Thermal Resistance, Junction−to−Case R(cid:2)JC 3.12 °C/W Thermal Resistance, Junction−to−Ambient R(cid:2)JA 83.3 °C/W ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2013 − Rev. 15 2N6035/D

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) ELECTRICAL CHARACTERISTICS (TC = 25(cid:2)C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage VCEO(sus) Vdc (IC = 100 mAdc, IB = 0) 2N6034G 40 − 2N6035G, 2N6038G 60 − 2N6036G, 2N6039G 80 − Collector−Cutoff Current ICEO (cid:3)A (VCE = 40 Vdc, IB = 0) 2N6034G − 100 (VCE = 60 Vdc, IB = 0) 2N6035G, 2N6038G − 100 (VCE = 80 Vdc, IB = 0) 2N6036G, 2N6039G − 100 Collector−Cutoff Current ICEX (cid:3)A (VCE = 40 Vdc, VBE(off) = 1.5 Vdc) 2N6034G − 100 (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6035G, 2N6038G − 100 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N6036G, 2N6039G − 100 (VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125(cid:2)C) 2N6034G − 500 (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125(cid:2)C) 2N6035G, 2N6038G − 500 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125(cid:2)C) 2N6036G, 2N6039G − 500 Collector−Cutoff Current ICBO mAdc (VCB = 40 Vdc, IE = 0) 2N6034G − 0.5 (VCB = 60 Vdc, IE = 0) 2N6035G, 2N6038G − 0.5 (VCB = 80 Vdc, IE = 0) 2N6036G, 2N6039G − 0.5 Emitter−Cutoff Current IEBO mAdc (VBE = 5.0 Vdc, IC = 0) − 2.0 ON CHARACTERISTICS DC Current Gain hFE − (IC = 0.5 Adc, VCE = 3.0 Vdc) 500 − (IC = 2.0 Adc, VCE = 3.0 Vdc) 750 15,000 (IC = 4.0 Adc, VCE = 3.0 Vdc) 100 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 2.0 Adc, IB = 8.0 mAdc) − 2.0 (IC = 4.0 Adc, IB = 40 mAdc) − 3.0 Base−Emitter Saturation Voltage VBE(sat) Vdc (IC = 4.0 Adc, IB = 40 mAdc) − 4.0 Base−Emitter On Voltage VBE(on) Vdc (IC = 2.0 Adc, VCE = 3.0 Vdc) − 2.8 DYNAMIC CHARACTERISTICS Small−Signal Current−Gain |hfe| 25 − − (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6034G, 2N6035G, 2N6036G − 200 2N6038G, 2N6039G − 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data. http://onsemi.com 2

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -V(cid:4)3C0C V D1 MUST BE FAST RECOVERY TYPE, eg: (cid:2)(cid:2)M1NS5D862150 U0 SUESDE DA BBOEVLEO WIB ≈IB 1≈0 100 m0A mA RC SCOPE TUT V2 RB approx +(cid:4)8.0 V 51 D1 ≈ 8.0 k ≈ 60 0 V1 +(cid:4)4.0 V approx -12 V 25 (cid:3)s for td and tr, D1 is disconnected tr, tf ≤ 10 ns taon odb Vta2i n= d0e, sRirBe da nteds Rt cCu arrreen vtsa.ried DUTY CYCLE = 1.0% For NPN test circuit, reverse diode, polarities and input pulses. Figure 1. Switching Times Test Circuit 4.0 VCC = 30 V IB1 = IB2 ts IC/IB = 250 TJ = 25°C 2.0 μE ((cid:2)(cid:3)s) 1.0 tf M 0.8 t, TI 0.6 tr 0.4 td @ VBE(off) = 0 PNP NPN 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Times 1.0 CE, 0.7 D = 0.5 N 0.5 A T S SI 0.3 0.2 E R 0.2 AL ED 0.1 THERMRMALIZ00.0.17 0.05 (cid:2)(cid:2)JJCC( =t) 3=. 1r(2t)° C(cid:2)J/WC MAX P(pk) T O 0.02 D CURVES APPLY FOR POWER ENN0.05 PULSE TRAIN SHOWN r(t), TRANSI 00..0023 SINGLE PULSE 0.01 RTJE(pAkD) - T TIMC E= APT(p tk1) (cid:2)JC(t) DUTtY1 CtY2CLE, D = t1/t2 0.01 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME (ms) Figure 3. Thermal Response http://onsemi.com 3

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) ACTIVE−REGION SAFE−OPERATING AREA 1.0 1.0 7.0 7.0 100 (cid:3)s 100 (cid:3)s P)5.0 5.0(cid:3)ms 1.0(cid:3)ms P)5.0 5.0(cid:3)ms M M A A 1.0(cid:3)ms T (3.0 dc T (3.0 dc N N E2.0 E2.0 R R R CUR1.0 BTOJ N= D1I5N0G°C WIRE LIMITED R CUR1.0 BTOJ N= D1I5N0G°C WIRE LIMITED O0.7 O0.7 T THERMALLY LIMITED T THERMALLY LIMITED LEC0.5 @ TC = 25°C (SINGLE PULSE) LEC0.5 @ TC = 25°C (SINGLE PULSE) L L CO0.3 SECOND BREAKDOWN LIMITED CO0.3 SECOND BREAKDOWN LIMITED , C0.2 , C0.2 I 2N6036 I 2N6039 2N6035 2N6038 0.1 0.1 5.0 7.0 10 20 30 50 70 100 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. 2N6035, 2N6036 Figure 5. 2N6038, 2N6039 There are two limitations on the power handling ability of 200 a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE TC = 25°C 100 limits of the transistor that must be observed for reliable F) operation; i.e., the transistor must not be subjected to greater E (p 70 dissipation than the curves indicate. C N The data of Figures 4 and 5 is based on T = 150(cid:2)C; TA 50 TC is variable depending on conditions. SecoJn(pdk b)reakdown PACI Cob A 30 p<u 1ls5e0 (cid:2)liCm.i tTs are v malaidy fboer cdaulctyu lcaytecdle fsr otom 1 t0h%e dpartoav iind eFdig TuJr(ep 3k). C, C Cib J(pk) 20 At high case temperatures, thermal limitations will reduce PNP the power that can be handled to values less than the NPN limitations imposed by second breakdown. 10 0.040.060.1 0.2 0.40.6 1.0 2.0 4.06.0 10 20 40 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance PNP NPN 2N6034, 2N6035, 2N6036 2N6038, 2N6039 6.0 k 6.0 k TC = 125°C VCE = 3.0 V TJ = 125°C VCE = 3.0 V 4.0 k 4.0 k 3.0 k 3.0 k N N GAI 25°C GAI 25°C T 2.0 k T 2.0 k N N E E R R UR -(cid:4)55°C UR -(cid:4)55°C C C C 1.0 k C 1.0 k D D , E 800 , E 800 F F h 600 h 600 400 400 300 300 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 7. DC Current Gain http://onsemi.com 4

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) S) 3.4 S) 3.4 OLT TJ = 25°C OLT TJ = 25°C GE (V 3.0 IC = GE (V 3.0 0I.C5 =A LTA 2.6 0.5 A LTA 2.6 1.0 A 2.0 A 4.0 A O O V 1.0 A 2.0 A 4.0 A V R 2.2 R 2.2 E E T T T T MI MI E 1.8 E 1.8 - - R R O O T 1.4 T 1.4 C C E E L L L L O 1.0 O 1.0 C C , E , E VC 0.6 VC 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 51000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.8 1.8 S) S) T T VOL 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V VOL 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V E ( E ( G G A A T T L 1.0 L 1.0 O O V, V VCE(sat) @ IC/IB = 250 V, V VCE(sat) @ IC/IB = 250 0.6 0.6 0.2 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. “On” Voltages ORDERING INFORMATION Device Package Shipping 2N6034G TO−225 500 Units / Box (Pb−Free) 2N6035G TO−225 500 Units / Box (Pb−Free) 2N6036G TO−225 500 Units / Box (Pb−Free) 2N6038G TO−225 500 Units / Box (Pb−Free) 2N6039G TO−225 500 Units / Box (Pb−Free) http://onsemi.com 5

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) PACKAGE DIMENSIONS TO−225 CASE 77−09 4 ISSUE AC 1 3 2 3 2 1 FRONT VIEW BACK VIEW E NOTES: 1.DIMENSIONING AND TOLERANCING PER A1 ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. Q A 3.NUMBER AND SHAPE OF LUGS OPTIONAL. PIN 4 MILLIMETERS BACKSIDE TAB DIM MIN MAX A 2.40 3.00 A1 1.00 1.50 b 0.60 0.90 D b2 0.51 0.88 P c 0.39 0.63 D 10.60 11.10 E 7.40 7.80 1 2 3 e 2.04 2.54 L 14.50 16.63 L1 1.27 2.54 P 2.90 3.30 L1 Q 3.80 4.20 STYLE 1: L PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE 2X b2 2X e b c FRONT VIEW SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com 2N6035/D 6

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: 2N6034 2N6034G 2N6035 2N6035G 2N6036 2N6036G 2N6038 2N6038G 2N6039 2N6039G