(cid:4)(cid:8)(cid:5)(cid:3)(cid:4)(cid:6)(cid:2) (cid:4)(cid:8)(cid:5)(cid:3)(cid:4)(cid:7) Preferred Device (cid:9)(cid:23)(cid:22)(cid:16)(cid:23)(cid:12)(cid:20)(cid:20)(cid:12)(cid:13)(cid:19)(cid:15) (cid:11)(cid:21)(cid:17)(cid:18)(cid:26)(cid:21)(cid:14)(cid:25)(cid:17)(cid:22)(cid:21) (cid:10)(cid:23)(cid:12)(cid:21)(cid:24)(cid:17)(cid:24)(cid:25)(cid:22)(cid:23) Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction http://onsemi.com characteristics such as RBB, h , IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse PUTs and timing circuits. These devices may also be used in special thyristor 40 VOLTS applications due to the availability of an anode gate. Supplied in an 300 mW inexpensive TO–92 plastic package for high–volume requirements, this package is readily adaptable for use in automatic insertion equipment. • Programmable — RBB, h , IV and IP G • Low On–State Voltage — 1.5 Volts Maximum @ IF = 50 mA A K • Low Gate to Anode Leakage Current — 10 nA Maximum • High Peak Output Voltage — 11 Volts Typical • Low Offset Voltage — 0.35 Volt Typical (RG = 10 k ohms) • Device Marking: Logo, Device Type, e.g., 2N6027, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit 1 *Power Dissipation PF 300 mW 23 Derate Above 25°C 1/q JA 4.0 mW/°C *DC Forward Anode Current IT 150 mA TO–92 (TO–226AA) Derate Above 25°C 2.67 mA/°C CASE 029 STYLE 16 *DC Gate Current IG (cid:1)50 mA Repetitive Peak Forward Current ITRM Amps PIN ASSIGNMENT 100 m s Pulse Width, 1% Duty Cycle 1.0 *20 m s Pulse Width, 1% Duty Cycle 2.0 1 Anode 2 Gate Non–Repetitive Peak Forward Current ITSM 5.0 Amps 10 m s Pulse Width 3 Cathode *Gate to Cathode Forward Voltage VGKF 40 Volts *Gate to Cathode Reverse Voltage VGKR (cid:2)5.0 Volts ORDERING INFORMATION *Gate to Anode Reverse Voltage VGAR 40 Volts See detailed ordering and shipping information in the package *Anode to Cathode Voltage(1) VAK (cid:1)40 Volts dimensions section on page 7 of this data sheet. Operating Junction Temperature Range TJ –50 to °C Preferred devices are recommended choices for future use +100 and best overall value. *Storage Temperature Range Tstg –55 to °C +150 *Indicates JEDEC Registered Data (1)Anode positive, RGA = 1000 ohms Anode negative, RGA = open  Semiconductor Components Industries, LLC, 2000 1 Publication Order Number: May, 2000 – Rev. 2 2N6027/D

2N6027, 2N6028 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Rq JC 75 °C/W Thermal Resistance, Junction to Ambient Rq JA 200 °C/W Maximum Lead Temperature for Soldering Purposes TL 260 °C ((cid:1)1/16″ from case, 10 secs max) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Fig. No. Symbol Min Typ Max Unit *Peak Current 2,9,11 IP m A (VS = 10 Vdc, RG = 1 MW) 2N6027 — 1.25 2.0 2N6028 — 0.08 0.15 (VS = 10 Vdc, RG = 10 k ohms) 2N6027 — 4.0 5.0 2N6028 — 0.70 1.0 *Offset Voltage 1 VT Volts (VS = 10 Vdc, RG = 1 MW) 2N6027 0.2 0.70 1.6 2N6028 0.2 0.50 0.6 (VS = 10 Vdc, RG = 10 k ohms) (Both Types) 0.2 0.35 0.6 *Valley Current 1,4,5 IV m A (VS = 10 Vdc, RG = 1 MW) 2N6027 — 18 50 2N6028 — 18 25 (VS = 10 Vdc, RG = 10 k ohms) 2N6027 70 150 — 2N6028 25 150 — (VS = 10 Vdc, RG = 200 ohms) 2N6027 1.5 — — mA 2N6028 1.0 — — *Gate to Anode Leakage Current — IGAO nAdc (VS = 40 Vdc, TA = 25°C, Cathode Open) — 1.0 10 (VS = 40 Vdc, TA = 75°C, Cathode Open) — 3.0 — Gate to Cathode Leakage Current — IGKS — 5.0 50 nAdc (VS = 40 Vdc, Anode to Cathode Shorted) *Forward Voltage (IF = 50 mA Peak)(1) 1,6 VF — 0.8 1.5 Volts *Peak Output Voltage 3,7 Vo 6.0 11 — Volt (VG = 20 Vdc, CC = 0.2 m F) Pulse Voltage Rise Time 3 tr — 40 80 ns (VB = 20 Vdc, CC = 0.2 m F) *Indicates JEDEC Registered Data (1)Pulse Test: Pulse Width ≤ 300 m sec, Duty Cycle ≤ 2%. http://onsemi.com 2

2N6027, 2N6028 +VB IA R1 R2 VA IA A R2 RG = R1 + R2 G – VS = R1 VB + VS –VP R1 + R2 RG VT = VP – VS VAK R1 VAK VS K VF VV IA 1A – Programmable Unijunction 1B – Equivalent Test Circuit for IGAO IP IV IF Figure 1A used for electrical with “Program” Resistors IC – Electrical Characteristics characteristics testing R1 and R2 (also see Figure 2) Figure 1. Electrical Characterization +VB – Adjust 100k IP (SENSE) +V Turfno–ron 1.0% 100 +m V = 1.0 nA 510k 16k Vo 6 V Threshold 2N5270 R VB RG = R/2 0.01 m F VS = VB/2 CC vo 27k Scope (See Figure 1) 20 W 0.6 V t Put tf 20 Under R Test Figure 2. Peak Current (IP) Test Circuit Figure 3. Vo and tr Test Circuit http://onsemi.com 3

2N6027, 2N6028 TYPICAL VALLEY CURRENT BEHAVIOR 1000 500 A) A) mENT ( RG = 10 kW mENT ( 100 RG = 10 kW R R R R U U C 100 C EY 100 kW EY L L L L VA VA 100 kW I , V 1 MW I , V 10 1 MW 10 5 5 10 15 20 –50 –25 0 +25 +50 +75 +100 VS, SUPPLY VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C) Figure 4. Effect of Supply Voltage Figure 5. Effect of Temperature 10 25 S) 5.0 TA = 25°C TA = 25°C CC = 0.2 m F LT S) (SEE FIGURE 3) LTAGE (VO 12..00 AGE (VOLT 2105 D VO 0.5 VOLT WAR 0.2 PUT 10 OR 0.1 UT 1000 pF F O K 0.05 K EA EA 5.0 P P V , F0.02 V , o 0.01 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 0 5.0 10 15 20 25 30 35 40 IF, PEAK FORWARD CURRENT (AMP) VS, SUPPLY VOLTAGE (VOLTS) Figure 6. Forward Voltage Figure 7. Peak Output Voltage + B2 A A E R2 RT R2 G P G RBB = R1 + R2 A G N h = R1 R1 + R2 P N R1 CC R1 K K K B1 Circuit Symbol Equivalent Circuit Typical Application with External “Program” Resistors R1 and R2 Figure 8. Programmable Unijunction http://onsemi.com 4

2N6027, 2N6028 TYPICAL PEAK CURRENT BEHAVIOR 2N6027 10 100 50 5.0 mENT ( A) 23..00 mENT ( A) 2100 (VSSE E= F1I0G VUORLET S2) R R R R5.0 U U C 1.0 C AK RG = 10 kW AK 2.0 E E I , PP 0.5 100 kW TA = 25°C I , PP1.0 RG = 10 kW 0.3 1.0 MW (SEE FIGURE 2) 0.5 100 kW 0.2 1.0 MW 0.2 0.1 0.1 5.0 10 15 20 –50 –25 0 +25 +50 +75 +100 VS, SUPPLY VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C) Figure 9. Effect of Supply Voltage and RG Figure 10. Effect of Temperature and RG 2N6028 1.0 10 0.7 5.0 0.5 mENT ( A) 00..23 R1G0 0= k1W0 kW mENT ( A) 21..00 (VSSE E= F1I0G VUORLET S2) R R R R 0.5 U U C 0.1 C AK 0.07 AK 0.2 RG = 10 kW E E I , PP 00..0053 1.0 MW TA = 25°C I , PP00.0.15 100 kW 0.02 (SEE FIGURE 2) 1.0 MW 0.02 0.01 0.01 5.0 10 15 20 –50 –25 0 +25 +50 +75 +100 VS, SUPPLY VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C) Figure 11. Effect of Supply Voltage and RG Figure 12. Effect of Temperature and RG http://onsemi.com 5

2N6027, 2N6028 TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL H2A H2A H2B H2B H W2 H4H5 T1 L1 H1 W1 W L T F1 T2 F2 P2 P2 D P1 P Figure 13. Device Positioning on Tape Specification Inches Millimeter Symbol Item Min Max Min Max D Tape Feedhole Diameter 0.1496 0.1653 3.8 4.2 D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51 F1, F2 Component Lead Pitch 0.0945 0.110 2.4 2.8 H Bottom of Component to Seating Plane .059 .156 1.5 4.0 H1 Feedhole Location 0.3346 0.3741 8.5 9.5 H2A Deflection Left or Right 0 0.039 0 1.0 H2B Deflection Front or Rear 0 0.051 0 1.0 H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5 H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5 L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11 L1 Lead Wire Enclosure 0.09842 — 2.5 — P Feedhole Pitch 0.4921 0.5079 12.5 12.9 P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75 P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95 T Adhesive Tape Thickness 0.06 0.08 0.15 0.20 T1 Overall Taped Package Thickness — 0.0567 — 1.44 T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65 W Carrier Strip Width 0.6889 0.7481 17.5 19 W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3 W2 Adhesive Tape Position .0059 0.01968 .15 0.5 NOTES: 1. Maximum alignment deviation between leads not to be greater than 0.2 mm. 2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 3. Component lead to tape adhesion must meet the pull test requirements. 4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more than 1 consecutive missing component is permitted. 7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes. http://onsemi.com 6

2N6027, 2N6028 ORDERING & SHIPPING INFORMATION: 2N6027 and 2N6028 packaging options, Device Suffix Europe U.S. Equivalent Shipping Description of TO92 Tape Orientation 2N6027, 2N6028 Bulk in Box (5K/Box) N/A, Bulk 2N6027, 2N6028RLRA Radial Tape and Reel (2K/Reel) Round side of TO92 and adhesive tape visible 2N6027RL1 Radial Tape and Reel (2K/Reel) Flat side of TO92 and adhesive tape visible 2N6028RLRM Radial Tape and Fan Fold Box (2K/Box) Flat side of TO92 and adhesive tape visible 2N6028RLRP Radial Tape and Fan Fold Box (2K/Box) Round side of TO92 and adhesive tape visible PACKAGE DIMENSIONS TO–92 (TO–226AA) CASE 029–11 ISSUE AJ NOTES: A B 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 X X D G 0.045 0.055 1.15 1.39 G H 0.095 0.105 2.42 2.66 H J J 0.015 0.020 0.39 0.50 K 0.500 ––– 12.70 ––– V C L 0.250 ––– 6.35 ––– N 0.080 0.105 2.04 2.66 SECTION X–X P ––– 0.100 ––– 2.54 1 N R 0.115 ––– 2.93 ––– V 0.135 ––– 3.43 ––– N STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE http://onsemi.com 7

2N6027, 2N6028 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: CENTRAL/SOUTH AMERICA: Literature Distribution Center for ON Semiconductor Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) P.O. Box 5163, Denver, Colorado 80217 USA Email: ONlit–spanish@hibbertco.com Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Email: ONlit@hibbertco.com Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada Toll Free from Hong Kong & Singapore: 001–800–4422–3781 N. American Technical Support: 800–282–9855 Toll Free USA/Canada Email: ONlit–asia@hibbertco.com EUROPE: LDC for ON Semiconductor – European Support JAPAN: ON Semiconductor, Japan Customer Focus Center GermanPhone: (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time) 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–8549 Email: ONlit–german@hibbertco.com Phone: 81–3–5740–2745 French Phone: (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time) Email: r14525@onsemi.com Email: ONlit–french@hibbertco.com English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time) ON Semiconductor Website: http://onsemi.com Email: ONlit@hibbertco.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 For additional information, please contact your local *Available from Germany, France, Italy, England, Ireland Sales Representative. http://onsemi.com 2N6027/D 8