2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and http://onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS • Excellent DC Current Gain NPN SILICON • High Current−Gain − Bandwidth Product 250−350 VOLTS, 20 WATTS • These Devices are Pb−Free and are RoHS Compliant* COLLECTOR MAXIMUM RATINGS (Note 1) 2, 4 Rating Symbol Value Unit Collector−Emitter Voltage VCEO Vdc 3 2N5655G 250 BASE 2N5657G 350 Collector−Base Voltage VCB Vdc 1 2N5655G 275 EMITTER 2N5657G 375 Emitter−Base Voltage VEB 6.0 Vdc Collector Current − Continuous IC 0.5 Adc Collector Current − Peak ICM 1.0 Adc TO−225 Base Current IB 1.0 Adc CASE 77−09 STYLE 1 Total Device Dissipation PD @ TC = 25°C 20 W Derate above 25°C 0.16 W/°C 1 2 3 Operating and Storage Junction TJ, Tstg –65 to +150 °C/W Temperature Range MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. YWW 1. Indicates JEDEC registered data. 2 N565xG THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R(cid:2)JC 6.25 °C/W Y =Year WW =Work Week 2N565x =Device Code x = 5 or 7 G =Pb−Free Package ORDERING INFORMATION Device Package Shipping 2N5655G TO−225 500 Units / Bulk (Pb−Free) 2N5657G TO−225 500 Units / Bulk *For additional information on our Pb−Free strategy and soldering details, please (Pb−Free) download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2013 − Rev. 12 2N5655/D

2N5655G, 2N5657G ELECTRICAL CHARACTERISTICS (TC = 25(cid:2)C unless otherwise noted) (Note 2) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage VCEO(sus) Vdc (IC = 100 mAdc (inductive), L = 50 mH) 2N5655G 250 − 2N5657G 350 − Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 2N5655G 250 − 2N5657G 350 − Collector Cutoff Current ICEO mAdc (VCE = 150 Vdc, IB = 0) 2N5655G − 0.1 (VCE = 250 Vdc, IB = 0) 2N5657G − 0.1 Collector Cutoff Current ICEX mAdc (VCE = 250 Vdc, VEB(off) = 1.5 Vdc) 2N5655G − 0.1 (VCE = 350 Vdc, VEB(off) = 1.5 Vdc) 2N5657G − 0.1 (VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100(cid:2)C) 2N5655G − 1.0 (VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100(cid:2)C) 2N5657G − 1.0 Collector Cutoff Current ICBO (cid:3)Adc (VCB = 275 Vdc, IE = 0) 2N5655G − 10 (VCB = 375 Vdc, IE = 0) 2N5657G − 10 Emitter Cutoff Current IEBO (cid:3)Adc (VEB = 6.0 Vdc, IC = 0) − 10 ON CHARACTERISTICS DC Current Gain (Note 3) hFE − (IC = 50 mAdc, VCE = 10 Vdc) 25 − (IC = 100 mAdc, VCE = 10 Vdc) 30 250 (IC = 250 mAdc, VCE = 10 Vdc) 15 − (IC = 500 mAdc, VCE = 10 Vdc) 5.0 − Collector−Emitter Saturation Voltage (Note 3) VCE(sat) Vdc (IC = 100 mAdc, IB = 10 mAdc) − 1.0 (IC = 250 mAdc, IB = 25 mAdc) − 2.5 (IC = 500 mAdc, IB = 100 mAdc) − 10 Base−Emitter Voltage VBE Vdc (IC = 100 mAdc, VCE = 10 Vdc) (Note 3) − 1.0 DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product fT MHz (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4) 10 − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 100 kHz) − 25 Small−Signal Current Gain hfe − (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 20 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC registered data for 2N5655 Series. 3. Pulse Test: Pulse Width ≤ 300 (cid:3)s, Duty Cycle ≤ 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2

2N5655G, 2N5657G 40 S) T AT 30 W N ( 50 mH O TI A P 20 X SI S 200 DI R Hg RELAY TO SCOPE POWE 10 +6.0 V Y 50 V +- , D P 300 1.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating Figure 2. Sustaining Voltage Test Circuit Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed. 1.0 There are two limitations on the power handling ability of 10 (cid:3)s a transistor: average junction temperature and second P) 0.5 breakdown. Safe operating area curves indicate I − V RENT (AM 0.2 TJ = 150°C 1.0 ms500 (cid:3)s loipmeirtast ioofn ;t hi.ee .t, rtahnes tirsatonrs isthtoart mmuusstt n boet boeb ssuebrvjeecdt efdo rtCo r gelrieaabCtelEer UR d­ dissipation than the curves indicate. R C 0.1 c The data of Figure 3 is based on TJ(pk) = 150(cid:2)C; TC is O Second Breakdown Limit T variable depending on conditions. Second breakdown pulse LLEC0.05 TBhoenrdminagl LWimireit L@im TitC = 25°C limits are valid for duty cycles to 10% provided TJ(pk) , COC0.02 Curves apply below rated VCEO 2N5655 w≤ i1ll5 r0e(cid:2)dCu.c eA tth eh pigohw ecra sthea tt ecmanp ebrea thuarnedsl,e dth teor mvaallu elism leitsast ithoanns I the limitations imposed by second breakdown. 2N5657 0.01 20 30 40 60 100 200 300 400 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Active−Region Safe Operating Area 300 200 VCE = 10 V VCE = 2.0 V N GAI 100 TJ = +150°C T N 70 E +100°C R R CU 50 +25°C C D , E 30 F h 20 -(cid:3)55°C 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 4. Current Gain http://onsemi.com 3

2N5655G, 2N5657G 1.0 0.8 VBE(sat) @ IC/IB = 10 S) T OL 0.6 VBE @ VCE = 10 V V E ( G A T L 0.4 O V V, VCE(sat) @ IC/IB = 10 0.2 TJ = +25°C IC/IB = 5.0 0 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 5. “On” Voltages 300 200 TJ = +25°C Cib F) p 100 E ( C 70 N A T CI 50 A P A C 30 C, 20 Cob 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance 10 10 5.0 tr VCC = I3C0/I0B V=, 1V0BE(off) = 2.0 V 5.0 IC/IB = 10 2.0 (2N5657, only) VCC = 100 V, VBE(off) = 0 V 1.0 2.0 ts μ(cid:4)(cid:5)s) 0.5 μ(cid:4)(cid:5)s) ME ( td ME ( 1.0 tf TI 0.2 TI t, 0.1 t, 0.5 VCC = 100 V 0.05 0.2 VCC = 300 V 0.02 (Type 2N5657, only) 0.01 0.1 1.0 2.0 5.0 10 20 50 100 200 500 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Turn−On Time Figure 8. Turn−Off Time http://onsemi.com 4

2N5655G, 2N5657G PACKAGE DIMENSIONS TO−225 CASE 77−09 4 ISSUE AC 1 3 2 3 2 1 FRONT VIEW BACK VIEW E NOTES: 1.DIMENSIONING AND TOLERANCING PER A1 ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. Q A 3.NUMBER AND SHAPE OF LUGS OPTIONAL. PIN 4 MILLIMETERS BACKSIDE TAB DIM MIN MAX A 2.40 3.00 A1 1.00 1.50 b 0.60 0.90 D b2 0.51 0.88 P c 0.39 0.63 D 10.60 11.10 E 7.40 7.80 1 2 3 e 2.04 2.54 L 14.50 16.63 L1 1.27 2.54 P 2.90 3.30 L1 Q 3.80 4.20 STYLE 1: L PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE 2X b2 2X e b c FRONT VIEW SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com 2N5655/D 5

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