Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 N 5 5 June 2013 5 1 / M M 2N5551 / MMBT5551 B T NPN General-Purpose Amplifier 5 5 5 1 — Description N P N This device is designed for general-purpose high-voltage G amplifiers and gas discharge display drivers. e n e r a l - P 2N5551 MMBT5551 u r p o s 3 e A m p 2 l TO-92 if i 1 SOT-23 e r Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number Top Mark Package Packing Method 2N5551TA 5551 TO-92 3L Ammo 2N5551TFR 5551 TO-92 3L Tape and Reel 2N5551TF 5551 TO-92 3L Tape and Reel 2N5551BU 5551 TO-92 3L Bulk MMBT5551 3S SOT-23 3L Tape and Reel Note: 1. Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix “-Y” means h 180~240 in 2N5551 (Test condition: I = 10 mA, V = 5.0 V) FE C CE © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5551 / MMBT5551 Rev. 1.1.0 1

2 N Absolute Maximum Ratings(2) 5 5 5 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- 1 ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- / tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The M absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. M A B Symbol Parameter Value Units T 5 VCEO Collector-Emitter Voltage 160 V 5 5 V Collector-Base Voltage 180 V 1 CBO — V Emitter-Base Voltage 6 V EBO N I Collector current - Continuous 600 mA C P T , T (2) Junction and Storage Temperature -55 to +150 °C N J stg G Notes: e n 2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. e 3. These ratings are based on a maximum junction temperature of 150 °C. ra l These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed - P or low-duty cycle operations. u r p o s Thermal Characteristics e A Values are at T = 25°C unless otherwise noted. m A p Maximum l i Symbol Parameter Units fi 2N5551 MMBT5551 e r Total Device Dissipation 625 350 mW P D Derate above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5551 / MMBT5551 Rev. 1.1.0 2

2 N Electrical Characteristics(4) 5 5 5 Values are at T = 25°C unless otherwise noted. 1 A / Symbol Parameter Test Condition Min. Max. Units M M Off Characteristics B V Collector-Emitter Breakdown Voltage I = 1.0 mA, I = 0 160 V T (BR)CEO C B 5 V Collector-Base Breakdown Voltage I = 100 μA, I = 0 180 V 5 (BR)CBO C E 5 V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V 1 — V = 120 V, I = 0 50 nA I Collector Cut-Off Current CB E N CBO V = 120 V, I = 0, T = 100°C 50 μA P CB E A N IEBO Emitter Cut-Off Current VEB = 4.0 V, IC = 0 50 nA G On Characteristics e n I = 1.0 mA, V = 5.0 V 80 e C CE r a hFE DC Current Gain IC = 10 mA, VCE = 5.0 V 80 250 l- P IC = 50 mA, VCE = 5.0 V 30 u r I = 10 mA, I = 1.0 mA 0.15 V p V Collector-Emitter Saturation Voltage C B o CE(sat) I = 50 mA, I = 5.0 mA 0.20 V s C B e I = 10 mA, I = 1.0 mA 1.0 V A C B VBE(sat) Base-Emitter On Voltage m I = 50 mA, I = 5.0 mA 1.0 V C B p l Small-Signal Characteristics i f i e f Current Gain Bandwidth Product IC = 10 mA, VCE = 10 V, 100 MHz r T f = 100 MHz C Output Capacitance V = 10 V, I = 0, f = 1.0 MHz 6.0 pF obo CB E C Input Capacitance V = 0.5 V, I = 0, f = 1.0 MHz 20 pF ibo BE C H Small-Signal Current Gain I = 1.0 mA, V = 10 V, f = 1.0 kHz 50 250 fe C CE I = 250 μA, V = 5.0 V, NF Noise Figure C CE 8.0 dB R =1.0 kΩ, f=10 Hz to 15.7 kHz S Note: 4. PCB board size FR-4 76 x 114 x 0.6 T mm3 (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size. © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5551 / MMBT5551 Rev. 1.1.0 3

2 N Typical Performance Characteristics 5 5 5 1 / M 250 125oC100oC VCE=5V GE [V] 10 ? 10 MB 200 TA T CURRENT GAIN 110500 75o2C5oC OR-EMITTER VOL 1 β 100oC 125oC 5551 — N DC -40oC CT 0.1 P h- FE 5001 10 100 1000 V- COLLECE(SAT) 0.011 -40oC 1205oC 75oC 100 N Gener a l IC- COLLECTOR CURRENT [mA] IC- COLLECTOR CURRENT [mA] -P u Figure 1. Typical Pulsed Current Gain vs. Collector Figure 2. Collector-Emitter Saturation Voltage vs. r Current Collector Current p o s e 1.0 1.2 A E [V] β-40oC E [V] 1.0 TA = -40oC mp OLTAG 0.8 25oC OLTAG 0.8 TA = 25oC lifie V V r R R MITTE 0.6 100oC 125oC MITTE 0.6 TA = 75oC ASE-E 0.4 75oC ASE-E 0.4 TA = 125oC TA = 100oC B B V- BE(SAT) V- BE(ON) 0.2 0.2 0.0 1 10 100 1 10 100 1000 I - COLLECTOR CURRENT [mA] I- COLLECTOR CURRENT [mA] C C Figure 3. Base-Emitter Saturation Voltage vs. Figure 4. Base-Emitter On Voltage vs. Collector Collector Current Current 100 50 A) T (n VC B = 100V N E F] R p CUR 10 NCE [ 10 CTOR PACITA CIB LE CA L O C I - CBO 125 50 75 100 125 10 1 2 3 4 5 6 7 CO8B 9 10 TA - AMBIENT TEMPERATURE ( ° C) Ω REVERSE BIAS VOLTAGE [V] Figure 5. Collector Cut-Off Current vs. Ambient Figure 6. Input and Output Capacitance vs. Reverse Temperature Voltage © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5551 / MMBT5551 Rev. 1.1.0 4

2 N Typical Performance Characteristics (Continued) 5 5 5 1 Between Emitter-Base vs Collector Current / M E (V) 260 AIN 16 M OLTAG 240 I C = 1.0 mA RENT G 12 FVR C EE G = =1 02V0 MHz BT55 N V 220 CUR 51 OW AL 8 — D N AK 200 SIG N BRE 180 ALL 4 PN V - CER1600.1 1 10 100 1000 h - SMFE 01 10 50 Gen B RESISTANCE (kΩ ) I - COLLECTOR CURRENT (mA) e C r a l - Figure 7. Collector- Emitter Breakdown Voltage Figure 8. Small Signal Current Gain vs. Collector P with Resistance between Emitter-Base Current u r p o 700 s e mW) 600 A N ( m O 500 TO-92 p SIPATI 400 SOT-23 lifie S r DI 300 R E W 200 O P P - D100 0 0 25 50 75 100 125 150 TEMPERATURE ( o C) Figure 9. Power Dissipation vs. Ambient Temperature © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5551 / MMBT5551 Rev. 1.1.0 5

2 N Physical Dimensions 5 5 5 1 / M TO-92 (Bulk) M B T 5 5 5 1 — N P N G e n e r a l - P u r p o s e A m p l i f i e r D Figure 10. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packaging/tr/to92pdd_tr.pdf. © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5551 / MMBT5551 Rev. 1.1.0 6

2 N Physical Dimensions (Continued) 5 5 5 1 / M TO-92 (Tape and Reel, Ammo) M B T 5 5 5 1 — N P N G e n e r a l - P u r p o s e A m p l i f i e r D Figure 11. 3-LEAD, TO92, MOLDED, 0.200 IN-LINE SPACING LD FORM(J62Z OPTION) (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packaging/tr/to92_tr.pdf. © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5551 / MMBT5551 Rev. 1.1.0 7

2 N Physical Dimensions (Continued) 5 5 5 1 / M SOT-23 M B T 5 5 0.95 5 2.92±0.20 1 — 3 N 1.40 P N G +0.20 1.30-0.15 2.20 e n e r a l - 1 2 P (0.29) 0.60 u 0.95 0.37 rp 0.20 A B 1.00 o s 1.90 1.90 e LAND PATTERN A m RECOMMENDATION p l 1.20 MAX SEE DETAIL A if i e r (0.93) 0.10 0.00 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. 0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS. 0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS, 0.25 MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 0.20 MIN SEATING E) DRAWING FILE NAME: MA03DREV10 (0.55) PLANE SCALE: 2X Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packaging/tr/SOT23-3L_tr.pdf. © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5551 / MMBT5551 Rev. 1.1.0 8

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: 2N5551CTA 2N5551TAR 2N5551TFR 2N5551BU 2N5551TF 2N5551TA