【晶体管 - 双极 (BJT) - 单_2N5551】封装/厂家_2N5551中文资料_价格

ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > 2N5551

图片仅供参考

详细数据请看参考数据手册

型号： 2N5551
制造商： Central Semiconductor
库位|库存： xxxx|xxxx
要求：无整包装整卷装连续切割带批次不详

数量阶梯	香港交货	国内含税
+xxxx	$xxxx	￥xxxx

查看当月历史价格

查看今年历史价格

2N5551产品简介：

ICGOO电子元器件商城为您提供2N5551由Central Semiconductor设计生产，在icgoo商城现货销售，并且可以通过原厂、代理商等渠道进行代购。 2N5551价格参考￥0.35-￥0.39。Central Semiconductor2N5551封装/规格：晶体管 - 双极 (BJT) - 单，双极 (BJT) 晶体管 NPN 160V 600mA 300MHz 625mW 通孔 TO-92。您可以下载2N5551参考资料、Datasheet数据手册功能说明书，资料中有2N5551 详细功能的应用电路图电压和使用方法及教程。

产品参数图文手册常见问题

参数	数值
品牌	Central Semiconductor
产品目录	半导体
描述	两极晶体管 - BJT NPN Gen Pur SS
产品分类	分离式半导体
产品手册	点击此处下载产品Datasheet
产品图片
rohs	过渡期间
产品系列	晶体管,两极晶体管 - BJT,Central Semiconductor 2N5551
产品型号	2N5551
产品种类	两极晶体管 - BJT
发射极-基极电压VEBO	6 V
商标	Central Semiconductor
增益带宽产品fT	300 MHz
安装风格	Through Hole
封装	Bulk
封装/箱体	TO-92
工厂包装数量	2500
晶体管极性	NPN
最大功率耗散	625 mW
最大工作温度	+ 150 C
最大直流电集电极电流	0.6 A
最小工作温度	- 65 C
直流集电极/BaseGainhfeMin	80
系列	2N5551
配置	Single
集电极—发射极最大电压VCEO	160 V
集电极—基极电压VCBO	180 V
集电极—射极饱和电压	0.2 V
集电极连续电流	0.6 A

样品试用

万种样品免费试用

去申请

2N5551 相关产品

BDX33CG

品牌：ON Semiconductor

价格：￥2.44-￥4.13

联系销售

PMST5550,115

品牌：Nexperia USA Inc.

价格：￥0.30-￥0.30

联系销售

PBSS5320T,215

品牌：Nexperia USA Inc.

价格：

联系销售

FJD3076TM

品牌：ON Semiconductor

价格：

联系销售

2SD1949T106R

品牌：Rohm Semiconductor

价格：￥2.28-￥7.43

联系销售

MPS6514_D74Z

品牌：ON Semiconductor

价格：

联系销售

FJL6825TU

品牌：ON Semiconductor

价格：

联系销售

MPSA63

品牌：Central Semiconductor Corp

价格：￥2.49-￥2.49

猜你喜欢最新产品推荐其他制造商

PDF Datasheet 数据手册内容提取

2N5550 2N5551 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N5550 2N5551 UNITS Collector-Base Voltage VCBO 160 180 V Collector-Emitter Voltage VCEO 140 160 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 600 mA Power Dissipation PD 625 mW Power Dissipation (TC=25°C) PD 1.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance JA 200 °C/W Thermal Resistance JC 125 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5550 2N5551 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=100V - 100 - - nA ICBO VCB=120V - - - 50 nA ICBO VCB=100V, TA=100°C - 100 - - μA ICBO VCB=120V, TA=100°C - - - 50 μA IEBO VEB=4.0V - 50 - 50 nA BVCBO IC=100μA 160 - 180 - V BVCEO IC=1.0mA 140 - 160 - V BVEBO IE=10μA 6.0 - 6.0 - V VCE(SAT) IC=10mA, IB=1.0mA - 0.15 - 0.15 V VCE(SAT) IC=50mA, IB=5.0mA - 0.25 - 0.20 V VBE(SAT) IC=10mA, IB=1.0mA - 1.0 - 1.0 V VBE(SAT) IC=50mA, IB=5.0mA - 1.2 - 1.0 V hFE VCE=5.0V, IC=1.0mA 60 - 80 - hFE VCE=5.0V, IC=10mA 60 250 80 250 hFE VCE=5.0V, IC=50mA 20 - 30 - hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 200 50 200 fT VCE=10V, IC=10mA, f=100MHz 100 300 100 300 MHz Cob VCB=10V, IE=0, f=1.0MHz - 6.0 - 6.0 pF Cib VBE=0.5V, IC=0, f=1.0MHz - 30 - 20 pF NF VCE=5.0V, IC=250μA, RS=1.0Ω, f=10Hz to 15.7kHz - 10 - 8.0 dB R1 (2-December 2014)

2N5550 2N5551 SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (2-December 2014) www.centralsemi.com

2N5550 2N5551 SILICON NPN TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R1 (2-December 2014) www.centralsemi.com

OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Worldwide Field Representatives: Hauppauge, NY 11788 USA www.centralsemi.com/wwreps Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Worldwide Distributors: Support Team Fax: (631) 435-3388 www.centralsemi.com/wwdistributors www.centralsemi.com For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms www.centralsemi.com (001)

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: C entral Semiconductor: 2N5550 2N5551 2N5551 PBFREE 2N5551 TIN/LEAD 2N5550 TIN/LEAD

参数	数值
产品目录	分立半导体产品
描述	TRANS NPN SS GP 0.6A 160V TO-92
产品分类	晶体管(BJT) - 单路
品牌	ON Semiconductor
数据手册	点击此处下载产品Datasheet
产品图片
产品型号	2N5551
PCN过时产品	点击此处下载产品Datasheet
rohs	含铅 / 不符合限制有害物质指令(RoHS)规范要求
产品系列	-
不同 Ib、Ic时的 Vce饱和值（最大值）	200mV @ 5mA，50mA
不同 Ic、Vce 时的DC电流增益(hFE)（最小值）	80 @ 10mA，5V
供应商器件封装	TO-92-3
其它名称	2N5551OS
功率-最大值	625mW
包装	散装
安装类型	通孔
封装/外壳	TO-226-3、TO-92-3 标准主体
晶体管类型	NPN
标准包装	5,000
电压-集射极击穿（最大值）	160V
电流-集电极(Ic)（最大值）	600mA
电流-集电极截止（最大值）	-
频率-跃迁	300MHz