2N5320 2N5321 NPN 2N5322 2N5323 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: SWITCHING TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series types are complementary silicon power transistors manufactured by the epitaxial planar process, designed for amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE 2N5320 2N5321 MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N5322 2N5323 UNITS Collector-Base Voltage VCBO 100 75 V Collector-Emitter Voltage VCEV 100 75 V Collector-Emitter Voltage VCEO 75 50 V Emitter-Base Voltage VEBO 6.0 5.0 V Continuous Collector Current IC 2.0 A Continuous Base Current IB 1.0 A Power Dissipation PD 10 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ΘJA 175 °C/W Thermal Resistance ΘJC 17.5 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5320 2N5321 2N5322 2N5323 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=80V - 0.5 - - μA ICBO VCB=60V - - - 5.0 μA IEBO VEB=5.0V - 0.1 - - μA IEBO VEB=4.0V - - - 0.5 μA BVCEV IC=100μA, VBE=1.5V 100 - 75 - V BVCEO IC=10mA 75 - 50 - V BVEBO IE=100μA 6.0 - 5.0 - V VCE(SAT) IC=500mA, IB=50mA (2N5320) - 0.5 - - V VCE(SAT) IC=500mA, IB=50mA (2N5321) - - - 0.8 V VCE(SAT) IC=500mA, IB=50mA (2N5322) - 0.7 - - V VCE(SAT) IC=500mA, IB=50mA (2N5323) - - - 1.2 V VBE(ON) VCE=4.0V, IC=500mA - 1.1 - 1.4 V hFE VCE=4.0V, IC=500mA 30 175 40 250 hFE VCE=2.0V, IC=1.0A 10 - - - fT VCE=4.0V, IC=50mA, f=10MHz 50 - 50 - MHz R5 (11-May 2017)

2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS ton VCC=30V, IC=500mA, IB1=50mA (2N5320, 2N5321) 80 ns ton VCC=30V, IC=500mA, IB1=50mA (2N5322, 2N5323) 100 ns toff VCC=30V, IC=500mA, IB1=IB2=50mA (2N5320, 2N5321) 800 ns toff VCC=30V, IC=500mA, IB1=IB2=50mA (2N5322, 2N5323) 1.0 μs TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R5 (11-May 2017) www.centralsemi.com

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