2N5109 www.centralsemi.com SILICON DESCRIPTION: NPN RF TRANSISTOR The CENTRAL SEMICONDUCTOR 2N5109 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 3.0 V Continuous Collector Current IC 400 mA Continuous Base Current IB 400 mA Power Dissipation PD 1.0 W Power Dissipation (TC=75°C) PD 2.5 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEV VCE=35V, VBE=1.5V 5.0 mA ICEV VCE=15V, VBE=1.5V, TC=150°C 5.0 mA ICEO VCE=15V 20 μA IEBO VEB=3.0V 100 μA BVCBO IC=0.1mA 40 V BVCER IC=5.0mA, RBE=10Ω 40 V BVCEO IC=5.0mA 20 V VCE(SAT) IC=100mA, IB=10mA 0.5 V hFE VCE=15V, IC=50mA 40 210 hFE VCE=5.0V, IC=360mA 5.0 fT VCE=15V, IC=50mA, f=200MHz 1200 MHz Cob VCB=15V, IE=0, f=1.0MHz 3.5 pF NF VCE=15V, IC=10mA, f=200MHz 3.0 dB GPE VCE=15V, IC=50mA, f=200MHz 11 dB R5 (4-February 2016)

2N5109 SILICON NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R5 (4-February 2016) www.centralsemi.com

2N5109 SILICON NPN RF TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS R5 (4-February 2016) www.centralsemi.com

2N5109 SILICON NPN RF TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS R5 (4-February 2016) www.centralsemi.com

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