ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > 2N5089
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2N5089产品简介:
ICGOO电子元器件商城为您提供2N5089由Central Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2N5089价格参考¥0.78-¥1.14。Central Semiconductor2N5089封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 25V 50mA 50MHz 625mW 通孔 TO-92。您可以下载2N5089参考资料、Datasheet数据手册功能说明书,资料中有2N5089 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
品牌 | Central Semiconductor |
产品目录 | 半导体 |
描述 | 两极晶体管 - BJT NPN Gen Pur SS |
产品分类 | 分离式半导体 |
产品手册 | |
产品图片 | |
rohs | 符合RoHS |
产品系列 | 晶体管,两极晶体管 - BJT,Central Semiconductor 2N5089 |
产品型号 | 2N5089 |
产品种类 | 两极晶体管 - BJT |
发射极-基极电压VEBO | 4.5 V |
商标 | Central Semiconductor |
增益带宽产品fT | 50 MHz |
安装风格 | Through Hole |
封装 | Bulk |
封装/箱体 | TO-92-3 |
工厂包装数量 | 2500 |
晶体管极性 | NPN |
最大功率耗散 | 625 mW |
最大工作温度 | + 150 C |
最小工作温度 | - 65 C |
直流电流增益hFE最大值 | 400 |
系列 | 2N5089 |
配置 | Single |
集电极—发射极最大电压VCEO | 25 V |
集电极—基极电压VCBO | 30 V |
集电极—射极饱和电压 | 0.5 V |
集电极连续电流 | 0.05 A |
2N5088 2N5089 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5088 and 2N5089 are silicon NPN transistors designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N5088 2N5089 UNITS Collector-Base Voltage VCBO 35 30 V Collector-Emitter Voltage VCEO 30 25 V Emitter-Base Voltage VEBO 4.5 V Continuous Collector Current IC 50 mA Power Dissipation PD 625 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance JA 200 °C/W Thermal Resistance JC 83.3 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N5088 2N5089 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=20V - 50 - - nA ICBO VCB=15V - - - 50 nA IEBO VEB=3.0V - 50 - 50 nA IEBO VEB=4.5V - 100 - 100 nA BVCBO IC=100μA 35 - 30 - V BVCEO IC=1.0mA 30 - 25 - V VCE(SAT) IC=10mA, IB=1.0mA - 0.5 - 0.5 V VBE(ON) VCE=5.0V, IC=10mA - 0.8 - 0.8 V hFE VCE=5.0V, IC=0.1mA 300 900 400 1.2K hFE VCE=5.0V, IC=1.0mA 350 - 450 - hFE VCE=5.0V, IC=10mA 300 - 400 - hfe VCE=5.0V, IC=1.0mA, f=1.0kHz 350 1.4K 450 1.8K fT VCE=5.0V, IC=0.5mA, f=20MHz 50 - 50 - MHz Cob VCB=5.0V, IE=0, f=100kHz - 4.0 - 4.0 pF Cib VEB=0.5V, IC=0, f=100kHz - 15 - 15 pF NF VCE=5.0V, IC=100μA, RS=10kΩ, f=10Hz to 15.7kHz - 3.0 - 2.0 dB R1 (20-June 2016)
2N5088 2N5089 SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (20-June 2016) www.centralsemi.com
2N5088 2N5089 SILICON NPN TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R1 (20-June 2016) www.centralsemi.com
2N5088 2N5089 SILICON NPN TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R1 (20-June 2016) www.centralsemi.com
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