2N5060 THRU 2N5064 www.centralsemi.com SILICON CONTROLLED RECTIFIERS The CENTRAL SEMICONDUCTOR 2N5060 series 0.8 AMP, 30 THRU 200 VOLT devices are epoxy molded SCRs designed for control systems and sensing circuit applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N5060 2N5061 2N5062 2N5063 2N5064 UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 30 60 100 150 200 V RMS On-State Current (Note 1; TC=80°C) IT(RMS) 0.8 A Average On-State Current (Note 1; TC=67°C) IT(AV) 0.51 A Average On-State Current (Note 1; TC=102°C) IT(AV) 0.255 A Peak One Cycle Surge Current (60Hz) ITSM 10 A I2t Value for Fusing (t=8.3ms) I2t 0.4 A2s Peak Forward Gate Power (tp<1.0μs) PGM 0.1 W Average Forward Gate Power (t=8.3ms) PG(AV) 0.01 W Peak Forward Gate Current (tp<1.0μs) IGM 1.0 A Peak Reverse Gate Voltage (tp<1.0μs) VRGM 5.0 V Operating Junction Temperature TJ -40 to +125 °C Storage Temperature Tstg -40 to +150 °C Thermal Resistance (Note 2) ΘJC 75 °C/W Thermal Resistance ΘJA 200 °C/W Notes: 1) 180° Conduction Angles 2) Measured with the “flat side down” on a heatsink and held in position by a metal clamp over the curved surface. ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM VD=Rated VDRM, RGK=1.0kΩ 10 μA IDRM, IRRM VD=Rated VDRM, RGK=1.0kΩ, TC=110°C 50 μA IGT VD=7.0V, RL=100Ω 200 μA IGT VD=7.0V, RL=100Ω, TC=-40°C 350 μA IH Initiating Current, IT=20mA, RGK=1.0kΩ 5.0 mA IH Initiating Current, IT=20mA, RGK=1.0kΩ, TC=-40°C 10 mA VGT VD=7.0V, RL=100Ω 0.8 V VGT VD=7.0V, RL=100Ω, TC=-40°C 1.2 V VGD VD=Rated VDRM, RL=100Ω, TC=110°C 0.1 V VTM ITM=1.2A, TA=25°C 1.7 V dv/dt VD=Rated VDRM, RGK=1.0kΩ 30 V/μs R5 (7-May 2015)

2N5060 THRU 2N5064 SILICON CONTROLLED RECTIFIERS 0.8 AMP, 30 THRU 200 VOLT ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) 2N5062 2N5060 2N5063 2N5061 2N5064 SYMBOL TEST CONDITIONS TYP TYP UNITS td VD=Rated VDRM, IGT=1.0mA, 3.0 3.0 μs tr Forward Current=1.0A, di/dt=6.0A/μs 0.2 0.2 μs Forward Current=1.0A, tp=50μs, tq 0.1% Duty Cycle, di/dt=6.0A/μs, 10 30 μs dv/dt=20V/μs, IGT=1.0mA TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Gate 3) Anode MARKING: FULL PART NUMBER R5 (7-May 2015) www.centralsemi.com

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