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2N4416A产品简介:
ICGOO电子元器件商城为您提供2N4416A由Central Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2N4416A价格参考。Central Semiconductor2N4416A封装/规格:晶体管 - JFET, JFET N-Channel 35V 300mW Through Hole TO-72。您可以下载2N4416A参考资料、Datasheet数据手册功能说明书,资料中有2N4416A 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
Id-ContinuousDrainCurrent | 15 mA |
Id-连续漏极电流 | 15 mA |
品牌 | Central Semiconductor |
产品目录 | 半导体 |
描述 | JFET N-Chan JFET |
产品分类 | 分离式半导体 |
产品手册 | |
产品图片 | |
rohs | 符合RoHS |
产品系列 | 晶体管,JFET,Central Semiconductor 2N4416A |
产品型号 | 2N4416A |
Pd-PowerDissipation | 300 mW |
Pd-功率耗散 | 300 mW |
Vds-Drain-SourceBreakdownVoltage | 35 V |
Vds-漏源极击穿电压 | 35 V |
Vgs-Gate-SourceBreakdownVoltage | 35 V |
Vgs-栅源极击穿电压 | 35 V |
Vgs=0时的漏-源电流 | 5 mA to 15 mA |
产品种类 | JFET |
功率耗散 | 300 mW |
商标 | Central Semiconductor |
安装风格 | Through Hole |
封装 | Bulk |
封装/箱体 | TO-72 |
工厂包装数量 | 500 |
晶体管极性 | N-Channel |
正向跨导-最小值 | 0.0045 S to 0.0075 S |
漏极连续电流 | 15 mA |
漏源电压VDS | 35 V |
系列 | 2N4416 |
配置 | Single |
闸/源击穿电压 | 35 V |
B14 02/2004 2N4416, 2N4416A N-Channel Silicon Junction Field-Effect Transistor • Mixers Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage 2N4416 – 30 V 2N4416A – 35 V • VHF Amplifiers Gate Current 10 mA 10 mA Continuous Device Dissipation 300 mW 300 mW Power Derating 2 mW°C 2 mW/°C At 25°C free air temperature: 2N4416 2N4416A Process NJ26 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V – 30 – 35 V I = – 1µA, V = ØV (BR)GSS G DS – 0.1 – 0.1 nA V = – 20V, V = ØV GS DS Gate Reverse Current I GSS – 0.1 – 0.1 µA V = – 20V, V = ØV T = 150°C GS DS A Gate Source Cutoff Voltage V – 6 – 2.5 – 6 V V = 15V, I = 1 nA GS(OFF) DS D Drain Saturation Current (Pulsed) I 5 15 5 15 mA V = 15V, V = ØV DSS DS GS Dynamic Electrical Characteristics Common Source 4500 7500 4500 7500 µS VDS= 15V, VGS= ØV f = 1 kHz g Forward Transconductance fs 4000 4000 µS V = 15V, V = ØV f = 400 MHz DS GS 50 50 µS V = 15V, V = ØV f = 1 kHz DS GS Common Source g 75 75 µS V = 15V, V = ØV f = 100 MHz Output Conductance os DS GS 100 100 µS V = 15V, V = ØV f = 400 MHz DS GS Common Source Input Capacitance C 4 4 pF V = 15V, V = ØV f = 1 MHz iss DS GS Common Source Output Capacitance C 2 2 pF V = 15V, V = ØV f = 1 MHz oss DS GS Common Source C 0.8 0.8 pF V = 15V, V = ØV f = 1 MHz Reverse Transfer Capacitance rss DS GS Common Source 100 100 µS VDS= 15V, VGS= ØV f = 100 MHz g Input Conductance is 1000 1000 µS V = 15V, V = ØV f = 400 MHz DS GS Common Source 2500 2500 µS VDS= 15V, VGS= ØV f = 100 MHz b Input Susceptance is 10000 10000 µS V = 15V, V = ØV f = 400 MHz DS GS Common Source 1000 1000 µS VDS= 15V, VGS= ØV f = 100 MHz b Output Susceptance os 4000 4000 µS V = 15V, V = ØV f = 400 MHz DS GS Common Source 18 18 dB VDS= 15V, ID= 5mA f = 100 MHz G Power Gain ps 10 10 dB V = 15V, I = 5mA f = 400 MHz DS D 2 2 dB V = 15V, I = 5mA f = 100 MHz Noise Figure NF DS D 4 4 dB RG= 1kW f = 400 MHz Note: rf parameters guaranteed, but not 100% tested. TO–72 Package Surface Mount See Section G for Outline Dimensions SMP4416, SMP4416A Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Case 715 N. Glenville Dr., Richardson, TX 75081 www.interfet.com (972) 238-1287 Fax (972) 238-5338
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