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2 N 4 4 November 2014 0 1 / M M B T 2N4401 / MMBT4401 4 4 0 NPN General-Purpose Amplifier 1 — N P Description N G This device is designed for use as a medium power e n amplifier and switch requiring collector currents up to e 500 mA. ra l - P u r p o s e C A m p E l i TO-92 SOT-23 B fie EBC Mark:2X r Figure 1. 2N4401 Device Package Figure 2. MMBT4401 Device Package Ordering Information Part Number Marking Package Packing Method 2N4401BU 2N4401 TO-92 3L Bulk 2N4401TF 2N4401 TO-92 3L Tape and Reel 2N4401TFR 2N4401 TO-92 3L Tape and Reel 2N4401TA 2N4401 TO-92 3L Ammo 2N4401TAR 2N4401 TO-92 3L Ammo MMBT4401 2X SOT-23 3L Tape and Reel © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N4401 / MMBT4401 Rev. 1.1.0

2 N Absolute Maximum Ratings(1),(2) 4 4 0 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- 1 ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- / M tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The M absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A B T Symbol Parameter Value Unit 4 4 V Collector-Emitter Voltage 40 V 0 CEO 1 VCBO Collector-Base Voltage 60 V — VEBO Emitter-Base Voltage 6.0 V N P IC Collector Current - Continuous 600 mA N T T Operating and Storage Junction Temperature Range -55 to +150 °C G J, STG e Notes: n e 1. These ratings are based on a maximum junction temperature of 150°C. ra l 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or - P low-duty cycle operations. u r p o s e Thermal Characteristics A m Values are at T = 25°C unless otherwise noted. A p l i Max. fi Symbol Parameter Unit e 2N4401(3) MMBT4401(4) r Total Device Dissipation 625 350 mW P D Derate Above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N4401 / MMBT4401 Rev. 1.1.0 2

2 N Electrical Characteristics 4 4 0 Values are at TA = 25°C unless otherwise noted. 1 / Symbol Parameter Conditions Min. Max. Unit M Collector-Emitter Breakdown M V(BR)CEO Voltage(5) IC = 1.0 mA, IB = 0 40 V B T Collector-Base Breakdown 4 V I = 0.1 mA, I = 0 60 V 4 (BR)CBO Voltage C E 0 1 V(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 6.0 V — IBL Base Cut-Off Current VCE = 35 V, VEB = 0.4 V 0.1 μA N P ICEX Collector Cut-Off Current VCE = 35 V, VEB = 0.4 V 0.1 μA N I = 0.1 mA, V = 1.0 V 20 G C CE e IC = 1.0 mA, VCE = 1.0 V 40 n e h DC Current Gain(5) I = 10 mA, V = 1.0 V 80 r FE C CE a l I = 150 mA, V = 1.0 V 100 300 - C CE P u I = 500 mA, V = 2.0 V 40 C CE r p Collector-Emitter Saturation IC = 150 mA, IB = 15 mA 0.40 o VCE(sat) Voltage(5) I = 500 mA, I = 50 mA 0.75 V se C B A I = 150 mA, I = 15 mA 0.75 0.95 V (sat) Base-Emitter Saturation Voltage(5) C B V m BE I = 500 mA, I = 50 mA 1.20 p C B l i f Current Gain - Bandwidth Product IC = 20 mA, VCE = 10 V, 250 MHz fie T f = 100 MHz r V = 5.0 V, I = 0, C Collector-Base Capacitance CB E 6.5 pF cb f = 140 kHz V = 0.5 V, I = 0, C Emitter-Base Capacitance BE C 30 pF eb f = 140 kHz I = 1.0 mA, V = 10 V, h Input Impedance C CE 1.0 15.0 kΩ ie f = 1.0 kHz I = 1.0 mA, V = 10 V, h Voltage Feedback Ratio C CE 0.1 8.0 x10-4 re f = 1.0 kHz I = 1.0 mA, V = 10 V, h Small-Signal Current Gain C CE 40 500 fe f = 1.0 kHz I = 1.0 mA, V = 10 V, h Output Admittance C CE 1.0 30 μmhos oe f = 1.0 kHz td Delay Time VCC = 30 V, VEB = 2 V, 15 ns tr Rise Time IC = 150 mA, IB1 = 15 mA 20 ns ts Storage Time VCC = 30 V, IC = 150 mA, 225 ns tf Fall Time IB1 = IB2 = 15 mA 30 ns Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N4401 / MMBT4401 Rev. 1.1.0 3

2 N Typical Performance Characteristics 4 4 0 1 / M V) AIN 500 GE ( 0.4 MB G A NT V C E = 5V OLT β = 10 T4 RRE 400 R V 0.3 40 LSED CU 300 125 °C R-EMITTE 0.2 125 °C 1 — N h - TYPICAL PUFE12000000.1 250 -°. C340 I° CC - C1OLLEC3TOR C1U0RRE3N0T (m1A0)0 300 V - COLLECTOCESAT0.11 I C - COLL1E0CTOR CUR2R5 °ECNT1 0(m0A-) 40 °C 500 PN Genera l - P Figure 3. Typical Pulsed Current Gain vs. Figure 4. Collector-Emitter Saturation Voltage vs. u Collector Current Collector Current rp o s e OLTAGE (V) 1 β = -1 400 °C VOLTAGE (V) 0.18 VC E =- 450V °C Amplifi TER V 0.8 25 °C R ON 25 °C er E-EMIT 0.6 125 °C EMITTE 0.6 125 °C BAS SE- 0.4 V - BESAT0.41 I C - COLL1E0CTOR CURREN1T0 0(mA) 500 V - BABE(ON)0.20.1 I C - COLLEC1TOR CURRENT (mA1)0 25 Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage vs. vs. Collector Current Collector Current A) 500 T (n 100 VC B = 40V 20 f = 1 MHz N URRE 10 E (pF) 16 C C CTOR 1 CITAN 12 Ct e E A LL AP 8 O 0.1 C I - CCBO 25 50 75 100 125 150 4 Cob 0.1 1 10 100 T A - AMBIENT TEMPERATURE (° C) REVERSE BIAS VOLTAGE (V) Figure 7. Collector Cut-Off Current vs. Figure 8. Emitter Transition and Output Capacitance Ambient Temperature vs. Reverse Bias Voltage © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N4401 / MMBT4401 Rev. 1.1.0 4

2 N Typical Performance Characteristics (Continued) 4 4 0 1 / M M 400 400 I B 1 = I B 2 = 1I0c I B 1 = I B 2 = 1I0c BT 320 320 4 V c c = 25 V V c c = 25 V 4 0 nS) 240 nS) 240 1 E ( E ( — TIM 160 TIM 160 t s N t o f f tr P 80 80 tf N ton td G 010 100 1000 010 100 1000 en I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) er a l - Figure 9. Turn-On and Turn-Off Times vs. Figure 10. Switching Times vs.Collector Current P Collector Current u r p o s A e m 8 W) 1 T I = 10C VT C A E = = 2150o CV Amp P - POWER DISSIPATION (D00.0.27.555 STOOT-9-223 SOT-223 R. RELATIVE TO VALUES A 246 hie hhhofreee lifier 00 25 50 75 100 125 150 HA 0 TEMPERATURE ( o C) C 0 10 20 30 40 50 60 I - COLLECTOR CURRENT (mA) C Figure 11. Power Dissipation vs. Figure 12. Common Emitter Characteristics Ambient Temperature C V oT T = 25 A2.24 VI C C = E 1=0 1 m0 AV hre hie T V = 10CE111.2..235 TI C A = = 1205 o mCA hfe A A S hfe S 1.15 UE 1.6 UE 1.1 hie L L VA hoe VA 1.05 O 1.2 O 1 T T VE 0.8 VE 0.95 hre ATI ATI 0.9 L L RE 0.4 RE 0.85 hoe R. R. 0.8 HA 0 HA 0.75 C 0 20 40 60 80 100 C 0 5 10 15 20 25 30 35 T A - AMBIENT TEMPERATURE ( o C) V C E - COLLECTOR VOLTAGE (V) Figure 13. Common Emitter Characteristics Figure 14. Common Emitter Characteristics © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N4401 / MMBT4401 Rev. 1.1.0 5

2 N Physical Dimensions 4 4 0 1 / M M B T 4 4 0 1 — N P N G e n e r a l - P u r p o s e A m p l i f i e r D Figure 15. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N4401 / MMBT4401 Rev. 1.1.0 6

2 N Physical Dimensions (Continued) 4 4 0 1 / M M B T 4 4 0 1 — N P N G e n e r a l - P u r p o s e A m p l i f i e r Figure 16. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N4401 / MMBT4401 Rev. 1.1.0 7

2 N Physical Dimensions (Continued) 4 4 0 1 / M M B T 2.92±0.20 0.95 4 4 0 3 1 1.40 — N P 1.30+0.20 2.20 N -0.15 G e n e 1 2 r a (0.29) 0.60 l- 0.95 0.37 P 0.20 A B 1.00 u r 1.90 1.90 p o LAND PATTERN s e RECOMMENDATION A m 1.20 MAX SEE DETAIL A p l i f i (0.93) 0.10 e 0.00 r 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. 0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS. 0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS, 0.25 MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 0.20 MIN SEATING E) DRAWING FILE NAME: MA03DREV10 (0.55) PLANE SCALE: 2X Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N4401 / MMBT4401 Rev. 1.1.0 8

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: 2N4401TFR 2N4401BU 2N4401_D26Z 2N4401_D27Z 2N4401_D27ZS00Z 2N4401_D29Z 2N4401_D75Z 2N4401RA 2N4401RM 2N4401RP 2N4401_J18Z 2N4401_D11Z 2N4401_J60Z 2N4401_J61Z 2N4401_J05Z 2N4401_J25Z 2N4401NLBU 2N4401TAR 2N4401TF 2N4401TA 2N4401_D81Z 2N4401_S00Z 2N4401TA_Q 2N4401_D81Z_Q 2N4401TFR_Q