ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > 2N4124
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2N4124产品简介:
ICGOO电子元器件商城为您提供2N4124由Central Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2N4124价格参考¥询价-¥询价。Central Semiconductor2N4124封装/规格:晶体管 - 双极 (BJT) - 单, Bipolar (BJT) Transistor NPN 25V 300MHz Through Hole TO-92。您可以下载2N4124参考资料、Datasheet数据手册功能说明书,资料中有2N4124 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
品牌 | Central Semiconductor |
产品目录 | 半导体 |
描述 | 两极晶体管 - BJT NPN Gen Pur SS |
产品分类 | 分离式半导体 |
产品手册 | |
产品图片 | |
rohs | 过渡期间 |
产品系列 | 晶体管,两极晶体管 - BJT,Central Semiconductor 2N4124 |
产品型号 | 2N4124 |
产品种类 | 两极晶体管 - BJT |
发射极-基极电压VEBO | 5 V |
商标 | Central Semiconductor |
增益带宽产品fT | 300 MHz |
安装风格 | Through Hole |
封装 | Bulk |
封装/箱体 | TO-92 |
工厂包装数量 | 2500 |
晶体管极性 | NPN |
最大功率耗散 | 625 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.2 A |
最小工作温度 | - 65 C |
直流电流增益hFE最大值 | 480 |
直流集电极/BaseGainhfeMin | 120 |
系列 | 2N4124 |
配置 | Single |
集电极—发射极最大电压VCEO | 25 V |
集电极—基极电压VCBO | 30 V |
集电极—射极饱和电压 | 0.3 V |
集电极连续电流 | 0.2 A |
2N4123 2N4124 NPN 2N4125 2N4126 PNP www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR 2N4123 series devices are complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N4123 2N4124 2N4125 2N4126 UNITS Collector-Base Voltage VCBO 40 30 30 25 V Collector-Emitter Voltage VCEO 30 25 30 25 V Emitter-Base Voltage VEBO 5.0 5.0 4.0 4.0 V Continuous Collector Current IC 200 mA Power Dissipation PD 625 mW Power Dissipation (TC=25°C) PD 1.5 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance JA 200 °C/W Thermal Resistance JC 83.3 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N4123 2N4124 2N4125 2N4126 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX UNITS ICBO VCB=20V - 50 - 50 - 50 - 50 nA IEBO VEB=3.0V - 50 - 50 - 50 - 50 nA BVCBO IC=10μA 40 - 30 - 30 - 25 - V BVCEO IC=1.0mA 30 - 25 - 30 - 25 - V BVEBO IE=10μA 5.0 - 5.0 - 4.0 - 4.0 - V VCE(SAT) IC=50mA, IB=5.0mA - 0.3 - 0.3 - 0.4 - 0.4 V VBE(SAT) IC=50mA, IB=5.0mA - 0.95 - 0.95 - 0.95 - 0.95 V hFE VCE=1.0V, IC=2.0mA 50 150 120 360 50 150 120 360 hFE VCE=1.0V, IC=50mA 25 - 60 - 25 - 60 - hfe VCE=10V, IC=2.0mA, f=1.0kHz 50 200 120 480 50 200 120 480 fT VCE=20V, IC=10mA, f=100MHz 250 - 300 - 200 - 250 - MHz Cob VCB=5.0V, IE=0, f=100kHz - 4.0 - 4.0 - 4.5 - 4.5 pF Cib VEB=0.5V, IC=0, f=100kHz - 8.0 - 8.0 - 10 - 10 pF NF VCE=5.0V, IC=100μA, RS=1.0kΩ, f=10Hz to 15.7kHz - 6.0 - 5.0 - 5.0 - 4.0 dB R1 (12-January 2016)
2N4123 2N4124 NPN 2N4125 2N4126 PNP COMPLEMENTARY SILICON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (12-January 2016) www.centralsemi.com
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