ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > 2N4033
Datasheet下载- 型号： 2N4033
- 制造商： Central Semiconductor
- 库位|库存： xxxx|xxxx
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2N4033产品简介：
ICGOO电子元器件商城为您提供2N4033由Central Semiconductor设计生产，在icgoo商城现货销售，并且可以通过原厂、代理商等渠道进行代购。 2N4033价格参考。Central Semiconductor2N4033封装/规格：晶体管 - 双极 (BJT) - 单， 双极 (BJT) 晶体管 PNP 80V 1A 500MHz 800mW 通孔 TO-39。您可以下载2N4033参考资料、Datasheet数据手册功能说明书，资料中有2N4033 详细功能的应用电路图电压和使用方法及教程。
| 参数 | 数值 |
| 品牌 | Central Semiconductor |
| 产品目录 | 半导体 |
| 描述 | 两极晶体管 - BJT PNP Ampl/Switch |
| 产品分类 | 分离式半导体 |
| 产品手册 | |
| 产品图片 |
|
| rohs | 符合RoHS |
| 产品系列 | 晶体管,两极晶体管 - BJT,Central Semiconductor 2N4033 |
| 产品型号 | 2N4033 |
| 产品种类 | 两极晶体管 - BJT |
| 发射极-基极电压VEBO | 5 V |
| 商标 | Central Semiconductor |
| 增益带宽产品fT | 150 MHz |
| 安装风格 | Through Hole |
| 封装 | Bulk |
| 封装/箱体 | TO-39 |
| 工厂包装数量 | 500 |
| 晶体管极性 | PNP |
| 最大功率耗散 | 0.8 W |
| 直流集电极/BaseGainhfeMin | 100 |
| 系列 | 2N4033 |
| 配置 | Single |
| 集电极—发射极最大电压VCEO | 80 V |
| 集电极—基极电压VCBO | 80 V |
| 集电极—射极饱和电压 | 0.5 V |
| 集电极连续电流 | 0.1 A |
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PDF Datasheet 数据手册内容提取
2N4033 www.centralsemi.com PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4033 type is a PNP silicon transistor manufactured by the epitaxial planar process, designed for high current general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 1.0 A Power Dissipation PD 1.25 W Power Dissipation (TC=25°C) PD 7.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ΘJA 140 °C/W Thermal Resistance ΘJC 20 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=60V 50 nA ICBO VCB=60V, TA=150°C 50 μA IEBO VEB=5.0V 10 μA BVCBO IC=10μA 80 V BVCEO IC=10mA 80 V BVEBO IE=10μA 5.0 V VCE(SAT) IC=150mA, IB=15mA 0.15 V VCE(SAT) IC=500mA, IB=50mA 0.50 V VBE(SAT) IC=150mA, IB=15mA 0.90 V VBE(ON) VCE=0.5V, IC=500mA 1.10 V hFE VCE=5.0V, IC=0.1mA 75 hFE VCE=5.0V, IC=100mA 100 300 hFE VCE=5.0V, IC=500mA 70 hFE VCE=5.0V, IC=1.0A 25 fT VCE=10V, IC=50mA 100 400 MHz Cob VCB=10V, IE=0, f=1.0MHz 20 pF Cib VEB=0.5V, IC=0, f=1.0MHz 110 pF ton IC=500mA, IB1=50mA 100 ns ts IC=500mA, IB1=IB2=50mA 350 ns tf IC=500mA, IB1=IB2=50mA 50 ns R1 (15-March 2012)
2N4033 PNP SILICON TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (15-March 2012) www.centralsemi.com
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