Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 N 3 9 April 2014 0 6 / M M B T 2N3906 / MMBT3906 / PZT3906 3 9 0 PNP General-Purpose Amplifier 6 / P Z T 3 Description 9 0 6 This device is designed for general-purpose amplifier — and switching applications at collector currents of 10 mA to 100 mA. P N P G e n 2N3906 MMBT3906 PZT3906 e r a l C -P C u r p E o E s C e TO-92 SOT-23 B SOT-223 B A EBC Mark:2A m p l i f i e r Ordering Information Part Number Marking Package Packing Method Pack Quantity 2N3906BU 2N3906 TO-92 3L Bulk 10000 2N3906TA 2N3906 TO-92 3L Ammo 2000 2N3906TAR 2N3906 TO-92 3L Ammo 2000 2N3906TF 2N3906 TO-92 3L Tape and Reel 2000 2N3906TFR 2N3906 TO-92 3L Tape and Reel 2000 MMBT3906 2A SOT-23 3L Tape and Reel 3000 PZT3906 3906 SOT-223 4L Tape and Reel 2500 © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 1

2 N Absolute Maximum Ratings(1) 3 9 0 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- 6 ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- / M tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The M absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A B T Symbol Parameter Value Unit 3 9 V Collector-Emitter Voltage -40 V 0 CEO 6 VCBO Collector-Base Voltage -40 V / P VEBO Emitter-Base Voltage -5.0 V Z T I Collector Current - Continuous -200 mA 3 C 9 T T Operating and Storage Junction Temperature Range -55 to +150 °C 0 J, STG 6 — Note: 1. These ratings are based on a maximum junction temperature of 150°C. P N These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed P or low-duty cycle operations. G e n e Thermal Characteristics r a l - Values are at T = 25°C unless otherwise noted. P A u r Maximum p Symbol Parameter Unit o 2N3906(3) MMBT3906(2) PZT3906(3) s e Total Device Dissipation 625 350 1,000 mW A PD Derate Above 25°C 5.0 2.8 8.0 mW/°C m p RθJC Thermal Resistance, Junction to Case 83.3 °C/W lif i RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W er Notes: 2. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 2

2 N Electrical Characteristics 3 9 0 Values are at TA = 25°C unless otherwise noted. 6 / Symbol Parameter Conditions Min. Max. Unit M M OFF CHARACTERISTICS B T Collector-Emitter Breakdown V I = -1.0 mA, I = 0 -40 V 3 (BR)CEO Voltage(4) C B 9 0 V Collector-Base Breakdown Voltage I = -10 μA, I = 0 -40 V 6 (BR)CBO C E / V Emitter-Base Breakdown Voltage I = -10 μA, I = 0 -5.0 V P (BR)EBO E C Z I Base Cut-Off Current V = -30 V, V = 3.0 V -50 nA T BL CE BE 3 I Collector Cut-Off Current V = -30 V, V = 3.0 V -50 nA 9 CEX CE BE 0 ON CHARACTERISTICS 6 — I = -0.1 mA, V = -1.0 V 60 C CE P IC = -1.0 mA, VCE = -1.0 V 80 N P hFE DC Current Gain(4) IC = -10 mA, VCE = -1.0 V 100 300 G I = -50 mA, V = -1.0 V 60 e C CE n I = -100 mA, V = -1.0V 30 e C CE r a VCE(sat) CVoolltlaegcetor-Emitter Saturation IICC == --1500 mmAA,, IIBB == --15..00 mmAA --00..2450 V l-Pu r I = -10 mA, I = -1.0 mA -0.65 -0.85 p C B V (sat) Base-Emitter Saturation Voltage V o BE I = -50 mA, I = -5.0 mA -0.95 s C B e SMALL SIGNAL CHARACTERISTICS A m I = -10 mA, V = -20 V, f Current Gain - Bandwidth Product C CE 250 MHz p T f = 100 MHz l i f V = -5.0 V, I = 0, ie Cobo Output Capacitance f =C B100 kHz E 4.5 pF r V = -0.5 V, I = 0, C Input Capacitance EB C 10.0 pF ibo f = 100 kHz I = -100 μA, V = -5.0 V, C CE NF Noise Figure R = 1.0 kΩ, 4.0 dB S f = 10 Hz to 15.7 kHz SWITCHING CHARACTERISTICS td Delay Time VCC = -3.0 V, VBE = -0.5 V 35 ns tr Rise Time IC = -10 mA, IB1 = -1.0 mA 35 ns ts Storage Time VCC = -3.0 V, IC = -10 mA, 225 ns tf Fall Time IB1 = IB2 = -1.0 mA 75 ns Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 3

2 N Typical Performance Characteristics 3 9 0 6 / M V) M AIN 250 GE ( 0.3 B RRENT G 200 125 °C V C E = 1.0V R VOLTA 0.25 β = 10 T3906 SED CU 150 EMITTE 00.1.25 25 °C / PZ CAL PUL 100 -2 450 ° °CC LECTOR 0.1 125°C T390 h - TYPIFE 500.1 0.2 I C 0-. 5COL1LECT2OR CU5RRE1N0T (2m0A) 50 100 V - COLCESAT0.0051 I C - COLLEC1T0OR CUR-R 4E0 N°CT (mA)100 200 6 — PN P Figure 1. Typical Pulsed Current Gain vs. Collector Figure 2. Collector-Emitter Saturation Voltage vs. G Current Collector Current e n e E (V) 1 β = 10 GE (V) 1 ral-P G A A - 40 °C T u VOLT 0.8 25 °C N VOL 0.8 - 40 °C rpo E EMITTER 00..46 125 °C EMITTER O 00..46 25 °C 125 °C se Am V - BASBESAT0.201 I - COLLEC1T0OR CURRENT (mA)100 200 V - BASE BE(ON)0.200.1 I - COLLEC1TOR CURRENT V ( mC E A =)1 01V 25 plifier C C Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage vs. vs. Collector Current Collector Current A) 100 n 10 NT ( V C B = 25V Cobo RE 10 F) 8 R p CU CE ( 6 R 1 N O A CT CIT 4 C i bo E A L P OL 0.1 CA 2 C I - CBO0.0125 50 75 100 125 00.1 1 10 REVERSE BIAS VOLTAGE (V) TA - AMBIENT TEMPERATURE (° C) Figure 5. Collector Cut-Off Current vs. Figure 6. Common-Base Open Circuit Input and Out- Ambient Temperature put Capacitance vs. Reverse Bias Voltage © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 4

2 N Typical Performance Characteristics (Continued) 3 9 0 6 / M 6 12 V = 5.0V V = 5.0V M CE CE f = 1.0 kHz B 5 10 B) B) T E (d 4 E (d 8 I C = 1.0 mA 39 R R 0 U U G G 6 E FI 3 I C = 100 μA, R S = 200Ω E FI 6 / P S S NOI 2 NOI 4 ZT NF - 1 I C = 1.0 mA, R S = 200Ω NF - 2 I C = 100 μA 39 0 I C = 100 μA, R S = 2.0 kΩ 6 0 0 — 0.1 1 10 100 0.1 1 10 100 f - FREQUENCY (kHz) R S - SOURCE RESISTANCE ( k Ω ) P N Figure 7. Noise Figure vs. Frequency Figure 8. Noise Figure vs. Source Resistance P G 500 500 e n e r 100 t s 100 t o f f al - P E (nS) tf E (nS) t o n I B 1 = 1I0c t o n urp M M V = 0.5V o TI 10 I B 1 = I B 2 = 1I0c tr TI 10 t o f f BEI B( O 1 F=F )I B 2 = 1I0c se A td m 1 1 p 1 10 100 1 10 100 l i I C - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA) fi e r Figure 9. Switching Times vs. Collector Current Figure 10. Turn-On and Turn-Off Times vs. Collector Current 1 W) ON ( 0.75 SOT-223 TI TO-92 A P SI S 0.5 DI R SOT-23 E W O 0.25 P P - D 0 0 25 50 75 100 125 150 TEMPERATURE ( o C) Figure 11. Power Dissipation vs. Ambient Temperature © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 5

2 N Typical Performance Characteristics (Continued) 3 9 0 6 / M _4x10 ) 100 10 Vf C= E 1 =.0 1 k0H Vz MB RATIO ( ΩCE (k ) T39 DBACK 10 MPEDAN 1 06 / P GE FEE NPUT I ZT3 OLTA h - Iie 906 V h - re 10.1 1 10 0.10.1 1 10 — P I - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA) C C N P Figure 12. Voltage Feedback Ratio Figure 13. Input Impedance G e hos) 1000 Vf C= E 1 =.0 1 k0H Vz 1000 Vf C= E 1 =.0 1 k0H Vz ner m 500 a μE ( N l-P NC GAI 200 u DMITTA 100 RRENT 100 rpos A U e UTPUT h - Cfe 50 Am O 20 p h - oe 10 10 lifie 0.1 1 10 0.1 1 10 r I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) Figure 14. Output Admittance Figure 15. Current Gain © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 6

2 N Physical Dimensions 3 9 0 6 / M TO-92 (Bulk) M B T 3 9 0 6 / P Z T 3 9 0 6 — P N P G e n e r a l - P u r p o s e A m p l i f i e r D Figure 16. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf. © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 7

2 N Physical Dimensions (Continued) 3 9 0 6 / M TO-92 (Ammo, Tape and Reel) M B T 3 9 0 6 / P Z T 3 9 0 6 — P N P G e n e r a l - P u r p o s e A m p l i f i e r Figure 17. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf. © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 8

2 N Physical Dimensions (Continued) 3 9 0 6 / M SOT-23 M B T 3 9 0.95 0 2.92±0.20 6 / 3 P Z 1.40 T 3 9 0 1.30+0.20 2.20 6 -0.15 — P N 1 2 P (0.29) 0.60 G 0.95 0.37 e 0.20 A B 1.00 n e 1.90 1.90 r a LAND PATTERN l- P RECOMMENDATION u r p 1.20 MAX SEE DETAIL A o s e (0.93) 0.10 A 0.00 m p 0.10 C l C 2.40±0.30 ifi e r NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. 0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS. 0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS, 0.25 MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 0.20 MIN SEATING E) DRAWING FILE NAME: MA03DREV10 (0.55) PLANE SCALE: 2X Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf. © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 9

2 N Physical Dimensions (Continued) 3 9 0 6 / M SOT-223 4L M B T 3 9 0 6 / P Z T 3 9 0 6 — P N P G e n e r a l - P u r p o s e A m p l i f i e r Figure 19. MOLDED PACKAGE, SOT-223, 4-LEAD Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA04A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf. © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 10

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: 2N3906_J25Z 2N3906_D26Z 2N3906_D28Z 2N3906_D74Z 2N3906_D75Z 2N3906RA 2N3906TAM 2N3906TAR 2N3906_D81Z 2N3906TFR 2N3906TA 2N3906TF 2N3906BU 2N3906_J05Z 2N3906_J61Z 2N3906_J18Z 2N3906_D11Z 2N3906_D27ZS00Z 2N3906TF_Q 2N3906TFR_Q 2N3906_J05Z_Q