2N3789 2N3791 2N3790 2N3792 www.centralsemi.com SILICON DESCRIPTION: PNP POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE 2N3789 2N3790 MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N3791 2N3792 UNITS Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 7.0 V Continuous Collector Current IC 10 A Continuous Base Current IB 4.0 A Power Dissipation PD 150 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance JC 1.17 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N3789 2N3790 2N3791 2N3792 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICEV VCE=Rated VCEO, VEB=1.5V - 1.0 - 1.0 mA ICEV VCE=Rated VCEO, VEB=1.5V, TC=150°C - 5.0 - 5.0 mA IEBO VEB=7.0V - 5.0 - 5.0 mA BVCEO IC=200mA 60 - 80 - V VCE(SAT) IC=4.0A, IB=400mA (2N3789, 2N3790) - 1.0 - 1.0 V VCE(SAT) IC=5.0A, IB=500mA (2N3791, 2N3792) - 1.0 - 1.0 V VBE(ON) VCE=2.0V, IC=5.0A (2N3789, 2N3790) - 2.0 - 2.0 V VBE(ON) VCE=2.0V, IC=5.0A (2N3791, 2N3792) - 1.8 - 1.8 V VBE(ON) VCE=4.0V, IC=10A - 4.0 - 4.0 V hFE VCE=2.0V, IC=1.0A (2N3789, 2N3790) 25 90 25 90 hFE VCE=2.0V, IC=1.0A (2N3791, 2N3792) 50 180 50 180 hFE VCE=2.0V, IC=3.0A (2N3789, 2N3790) 15 - 15 - hFE VCE=2.0V, IC=3.0A (2N3791, 2N3792) 30 - 30 - fT VCE=10V, IC=500mA, f=1.0MHz 4.0 - 4.0 - MHz R2 (31-July 2013)

2N3789 2N3791 2N3790 2N3792 SILICON PNP POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base R2 2) Emitter Case) Collector MARKING: FULL PART NUMBER R2 (31-July 2013) www.centralsemi.com

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