2N3713 2N3715 2N3714 2N3716 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) 2N3713 2N3714 SYMBOL 2N3715 2N3716 UNITS Collector-Base Voltage VCBO 80 100 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 7.0 V Continuous Collector Current IC 10 A Continuous Base Current IB 4.0 A Power Dissipation PD 150 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance JC 1.17 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEV VCE=Rated VCBO, VBE=1.5V 1.0 mA ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C 10 mA IEBO VEB=7.0V 5.0 mA BVCEO IC=200mA (2N3713, 2N3715) 60 V BVCEO IC=200mA (2N3714, 2N3716) 80 V VCE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) 1.0 V VCE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) 0.8 V VBE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) 2.0 V VBE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) 1.5 V VBE(ON) VCE=2.0V, IC=3.0A 1.5 V hFE VCE=2.0V, IC=1.0A (2N3713, 2N3714) 40 120 hFE VCE=2.0V, IC=1.0A (2N3715, 2N3716) 50 150 hFE VCE=2.0V, IC=3.0A (2N3713, 2N3714) 15 hFE VCE=2.0V, IC=3.0A (2N3715, 2N3716) 30 fT VCE=10V, IC=0.5A, f=1.0MHz 4.0 MHz tr IC=5.0A, IB1=IB2=0.5A 0.4 μs ts IC=5.0A, IB1=IB2=0.5A 0.3 μs tf IC=5.0A, IB1=IB2=0.5A 0.4 μs R2 (18-June 2013)

2N3713 2N3715 2N3714 2N3716 SILICON NPN TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE R2 LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R2 (18-June 2013) www.centralsemi.com

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: C entral Semiconductor: 2N3714 2N3713 LEADFREE 2N3713 2N3715 2N3716