ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > 2N3584
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2N3584产品简介:
ICGOO电子元器件商城为您提供2N3584由Central Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2N3584价格参考¥30.18-¥51.05。Central Semiconductor2N3584封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 250V 2A 10MHz 35W 通孔 TO-66。您可以下载2N3584参考资料、Datasheet数据手册功能说明书,资料中有2N3584 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
品牌 | Central Semiconductor |
产品目录 | 半导体 |
描述 | 两极晶体管 - BJT NPN High Power |
产品分类 | 分离式半导体 |
产品手册 | |
产品图片 | |
rohs | 符合RoHS |
产品系列 | 晶体管,两极晶体管 - BJT,Central Semiconductor 2N3584 |
产品型号 | 2N3584 |
产品种类 | 两极晶体管 - BJT |
发射极-基极电压VEBO | 6 V |
商标 | Central Semiconductor |
增益带宽产品fT | 10 MHz |
安装风格 | Stud |
封装 | Tube |
封装/箱体 | TO-66 |
工厂包装数量 | 30 |
晶体管极性 | NPN |
最大功率耗散 | 35 W |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 2 A |
最小工作温度 | - 65 C |
直流集电极/BaseGainhfeMin | 40 |
系列 | 2N3584 |
集电极—发射极最大电压VCEO | 250 V |
集电极—基极电压VCBO | 375 V |
集电极—射极饱和电压 | 0.75 V |
2N3583 2N3584 2N3585 www.centralsemi.com DESCRIPTION: SILICON The CENTRAL SEMICONDUCTOR 2N3583 series NPN TRANSISTORS devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N3583 2N3584 2N3585 UNITS Collector-Base Voltage VCBO 250 375 500 V Collector-Emitter Voltage VCEO 175 250 300 V Emitter-Base Voltage VEBO 6.0 6.0 6.0 V Continuous Collector Current IC 1.0 2.0 2.0 A Peak Collector Current ICM 5.0 A Continuous Base Current IB 1.0 A Power Dissipation PD 35 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance JC 5.0 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N3583 2N3584 2N3585 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS ICEV VCE=225V, VEB=1.5V - 1.0 - - - - mA ICEV VCE=340V, VEB=1.5V - - - 1.0 - - mA ICEV VCE=450V, VEB=1.5V - - - - - 1.0 mA ICEV VCE=225V, VEB=1.5V, TC=150°C - 3.0 - - - - mA ICEV VCE=300V, VEB=1.5V, TC=150°C - - - 3.0 - 3.0 mA ICEO VCE=150V - 10 - 5.0 - 5.0 mA IEBO VBE=6.0V - 5.0 - 0.5 - 0.5 mA BVCEO IC=200mA 175 - 250 - 300 - V VCE(SAT) IC=1.0A, IB=125mA - 5.0 - 0.75 - 0.75 V VBE(SAT) IC=1.0A, IB=100mA - - - 1.4 - 1.4 V VBE(ON) VCE=10V, IC=1.0A - 1.4 - 1.4 - 1.4 V hFE VCE=10V, IC=100mA 40 - 40 - 40 - hFE VCE=10V, IC=500mA 40 200 - - - - hFE VCE=2.0V, IC=1.0A - - 8.0 80 8.0 80 hFE VCE=10V, IC=1.0A 10 - 25 100 25 100 fT VCE=10V, IC=200mA, f=5.0MHz 10 - 10 - 10 - MHz Cob VCB=10V, IE=0, f=1.0MHz - 120 - 120 - 120 pF hfe VCE=30V, IC=100mA, f=1.0kHz 25 350 - - - - tr VCC=200V, IC=1.0A, IB1=100mA, RL=200Ω - - - 3.0 - 3.0 μs ts VCC=200V, IC=1.0A, IB1=IB2=100mA - - - 4.0 - 4.0 μs tf VCC=200V, IC=1.0A, IB1=IB2=100mA - - - 3.0 - 3.0 μs IS/b VCE=100V 350 - 350 - 350 - mA R3 (2-September 2014)
2N3583 2N3584 2N3585 SILICON NPN TRANSISTORS TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R3 (2-September 2014) www.centralsemi.com
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