2N3054 2N3054A www.centralsemi.com SILICON DESCRIPTION: NPN POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3054, 2N3054A devices are silicon NPN power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 90 V Collector-Emitter Voltage VCEV 90 V Collector-Emitter Voltage VCER 60 V Collector-Emitter Voltage VCEO 55 V Emitter-Base Voltage VEBO 7.0 V Continuous Collector Current IC 4.0 A Continuous Base Current IB 2.0 A Power Dissipation (2N3054) PD 25 W Power Dissipation (2N3054A) PD 75 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance (2N3054) JC 7.0 °C/W Thermal Resistance (2N3054A) JC 2.33 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEV VCE=90V, VEB=1.5V 1.0 mA ICEV VCE=90V, VEB=1.5V, TC=150°C 6.0 mA ICEO VCE=30V 500 μA IEBO VEB=7.0V 1.0 mA BVCEO IC=100mA 55 V BVCER IC=100mA, RBE=100Ω 60 V VCE(SAT) IC=500mA, IB=50mA 1.0 V VCE(SAT) IC=3.0A, IB=1.0A 6.0 V VBE(ON) VCE=4.0V, IC=500mA 1.7 V hFE VCE=4.0V, IC=500mA 25 150 hFE VCE=4.0V, IC=3.0A 5.0 hfe VCE=4.0V, IC=100mA, f=1.0kHz 25 180 fT VCE=10V, IC=200mA, f=1.0MHz 3.0 MHz fhfe VCE=4.0V, IC=100mA 30 kHz R2 (2-September 2014)

2N3054 2N3054A SILICON NPN POWER TRANSISTORS TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R2 (2-September 2014) www.centralsemi.com

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