2N3053 2N3053A www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A types are epitaxial planar NPN silicon transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N3053 2N3053A UNITS Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO 40 60 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 0.7 A Power Dissipation (TC=25°C) PD 5.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ΘJC 35 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3053 2N3053A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICEV VCE=30V, VEB=1.5V - 250 - - nA ICEV VCE=60V, VEB=1.5V - - - 250 nA IEBO VEB=4.0V - 250 - 250 nA BVCBO IC=100μA 60 - 80 - V BVCER IC=100mA, RBE=10Ω (Note 1) 50 - 70 - V BVCEO IC=100mA (Note 1) 40 - 60 - V BVEBO IE=100μA 5.0 - 5.0 - V VCE(SAT) IC=150mA, IB=15mA - 1.4 - 0.3 V VBE(SAT) IC=150mA, IB=15mA - 1.7 0.6 1.0 V VBE(ON) VCE=2.5V, IC=150mA - 1.7 - 1.0 V hFE VCE=2.5V, IC=150mA 25 - 25 - hFE VCE=10V, IC=150mA 50 250 50 250 fT VCE=10V, IC=50mA, f=100MHz 100 - 100 - MHz Cob VCB=10V, IE=0, f=1.0MHz - 15 - 15 pF Cib VBE=0.5V, IC=0, f=1.0MHz - 80 - 80 pF Notes: (1) Pulse width < 300μs, duty cycle < 2%. R2 (13-December 2013)

2N3053 2N3053A SILICON NPN TRANSISTORS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (13-December 2013) www.centralsemi.com

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