2N3019 2N3020 www.centralsemi.com DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Continuous Collector Current IC 1.0 A Power Dissipation PD 0.8 W Power Dissipation (TC=25°C) PD 5.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3019 2N3020 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=90V - 10 - 10 nA ICBO VCB=90V, TA=150°C - 10 - 10 μA IEBO VEB=5.0V - 10 - 10 nA BVCBO IC=100μA 140 - 140 - V BVCEO IC=30mA 80 - 80 - V BVEBO IE=100μA 7.0 - 7.0 - V VCE(SAT) IC=150mA, IB=15mA - 0.2 - 0.2 V VCE(SAT) IC=500mA, IB=50mA - 0.5 - 0.5 V VBE(SAT) IC=150mA, IB=15mA - 1.1 - 1.1 V hFE VCE=10V, IC=100μA 50 - 30 100 hFE VCE=10V, IC=10mA 90 - 40 120 hFE VCE=10V, IC=150mA 100 300 40 120 hFE VCE=10V, IC=150mA, TA=-55°C 40 - - - hFE VCE=10V, IC=500mA 50 - 30 100 hFE VCE=10V, IC=1.0A 15 - 15 - fT VCE=10V, IC=50mA, f=20MHz 100 - 100 - MHz Cob VCB=10V, IE=0, f=1.0MHz - 12 - 12 pF Cib VEB=0.5V, IC=0, f=1.0MHz - 60 - 60 pF rb’Cc VCE=10V, IC=10mA, f=4.0MHz - 400 - 400 ps NF VCE=10V, IC=100μA, f=1.0kHz, RS=1.0kΩ - 4.0 - - dB R1 (11-June 2012)

2N3019 2N3020 NPN SILICON TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (11-June 2012) www.centralsemi.com

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