ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > 2N2484
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2N2484产品简介:
ICGOO电子元器件商城为您提供2N2484由Central Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2N2484价格参考¥4.90-¥8.65。Central Semiconductor2N2484封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 60V 50mA 360mW 通孔 TO-18。您可以下载2N2484参考资料、Datasheet数据手册功能说明书,资料中有2N2484 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
品牌 | Central Semiconductor |
产品目录 | 半导体 |
描述 | 两极晶体管 - BJT NPN Low Lvl SS |
产品分类 | 分离式半导体 |
产品手册 | |
产品图片 | |
rohs | 符合RoHS |
产品系列 | 晶体管,两极晶体管 - BJT,Central Semiconductor 2N2484 |
产品型号 | 2N2484 |
产品种类 | 两极晶体管 - BJT |
发射极-基极电压VEBO | 6 V |
商标 | Central Semiconductor |
增益带宽产品fT | 60 MHz |
安装风格 | Through Hole |
封装 | Bulk |
封装/箱体 | TO-18 |
工厂包装数量 | 2000 |
晶体管极性 | NPN |
最大功率耗散 | 360 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.05 A |
最小工作温度 | - 65 C |
直流集电极/BaseGainhfeMin | 200 |
系列 | 2N2484 |
配置 | Single |
集电极—发射极最大电压VCEO | 60 V |
集电极—基极电压VCBO | 60 V |
集电极—射极饱和电压 | 0.35 V |
2N2484 www.centralsemi.com NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2484 type is an NPN silicon transistor designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 50 mA Power Dissipation PD 360 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ΘJA 486 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=45V 10 nA ICBO VCB=45V, TA=150°C 10 μA ICEO VCE=5.0V 2.0 nA IEBO VEB=5.0V 10 nA BVCBO IC=10μA 60 V BVCEO IC=10mA 60 V BVEBO IE=10μA 6.0 V VCE(SAT) IC=1.0mA, IB=100μA 0.35 V VBE(ON) VCE=5.0V, IC=100μA 0.5 0.7 V hFE VCE=5.0V, IC=1.0μA 30 hFE VCE=5.0V, IC=10μA 100 500 hFE VCE=5.0V, IC=10μA, TA=-55°C 20 hFE VCE=5.0V, IC=100μA 175 hFE VCE=5.0V, IC=500μA 200 hFE VCE=5.0V, IC=1.0mA 250 hFE VCE=5.0V, IC=10mA 800 hfe VCE=5.0V, IC=1.0mA, f=1.0kHz 150 900 fT VCE=5.0V, IC=50μA, f=5.0MHz 15 MHz fT VCE=5.0V, IC=0.5mA, f=30MHz 60 MHz hie VCE=5.0V, IC=1.0mA, f=1.0kHz 3.5 24 kΩ hoe VCE=5.0V, IC=1.0mA, f=1.0kHz 40 μS hre VCE=5.0V, IC=1.0mA, f=1.0kHz 800 x10-6 Cob VCB=5.0V, IE=0, f=140kHz 6.0 pF Cib VEB=0.5V, IC=0, f=140kHz 6.0 pF R1 (30-May 2012)
2N2484 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS NF VCE=5.0V, IC=10μA, RS=10kΩ BW=15.7kHz, 3.0dB PTS @ 10Hz, 10kHz 3.0 dB NF VCE=5.0V, IC=10μA, RS=10kΩ, f=100Hz, BW=20Hz 10 dB NF VCE=5.0V, IC=10μA, RS=10kΩ, f=1.0kHz, BW=200Hz 3.0 dB NF VCE=5.0V, IC=10μA, RS=10kΩ, f=10kHz, BW=2.0kHz 2.0 dB TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (30-May 2012) www.centralsemi.com
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