2N2221 2N2222 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N2221 and 2N2222 are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 800 mA Power Dissipation PD 500 mW Power Dissipation (TC=25°C) PD 1.2 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ΘJA 350 °C/W Thermal Resistance ΘJC 146 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=50V - 10 nA ICBO VCB=50V, TA=150°C - 10 μA IEBO VEB=3.0V - 10 nA BVCBO IC=10μA 60 - V BVCEO IC=10mA 30 - V BVEBO IE=10μA 5.0 - V VCE(SAT) IC=150mA, IB=15mA - 0.4 V VCE(SAT) IC=500mA, IB=50mA - 1.6 V VBE(SAT) IC=150mA, IB=15mA 0.6 1.3 V VBE(SAT) IC=500mA, IB=50mA - 2.6 V fT VCE=20V, IC=20mA, f=100MHz 250 - MHz Cob VCB=10V, IE=0, f=100kHz - 8.0 pF Cib VEB=0.5V, IC=0, f=100kHz - 30 pF R2 (24-July 2013)

2N2221 2N2222 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N2221 2N2222 SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, IC=0.1mA 20 - 35 - hFE VCE=10V, IC=1.0mA 25 - 50 - hFE VCE=10V, IC=10mA 35 - 75 - hFE VCE=10V, IC=10mA, TA=-55°C 15 - 35 - hFE VCE=10V, IC=150mA 40 120 100 300 hFE VCE=1.0V, IC=150mA 20 - 50 - hFE VCE=10V, IC=500mA 25 - 40 - TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (24-July 2013) www.centralsemi.com

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