2KBP005M thru 2KBP10M, 3N253 thru 3N259 Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • UL recognition file number E54214 (cid:129) Ideal for printed circuit board e4 (cid:129) High surge current capability (cid:129) High case dielectric strength − ~ + ~ ~ − (cid:129) Solder dip 260 °C, 40 s ~ + (cid:129) Component in accordance to RoHS 2002/95/EC Case Style KBPM and WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for switching power supply, home PRIMARY CHARACTERISTICS appliances, office equipment, and telecommunication IF(AV) 2 A applications. V 50 V to 1000 V RRM IFSM 60 A MECHANICAL DATA IR 5 µA Case: KBPM VF 1.1 V Epoxy meets UL 94V-0 flammability rating TJ max. 165 °C Terminals: Silver plated leads, solderable per J-STD-002 and JESD22-B102 E4 suffix for consumer grade Polarity: As marked on body MAXIMUM RATINGS (T = 25°C unless otherwise noted) A 2KBP 2KBP 2KBP 2KBP 2KBP 2KBP 2KBP PARAMETER SYMBOL 005M 01M 02M 04M 06M 08M 10M UNIT 3N253 3N254 3N255 3N256 3N257 3N258 3N259 Maximum repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 400 600 800 1000 V DC Max. average forward output rectified current I 2.0 A at T = 55 °C F(AV) A Peak forward surge current single half I 60 A sine-wave superimposed on rated load FSM Rating for fusing (t < 8.3 ms) I2t 15 A2s Operating junction and T , T - 55 to + 165 °C storage temperature range J STG Document Number: 88532 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 15-Apr-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 1

2KBP005M thru 2KBP10M, 3N253 thru 3N259 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A 2KBP 2KBP 2KBP 2KBP 2KBP 2KBP 2KBP PARAMETER TEST SYMBOL 005M 01M 02M 04M 06M 08M 10M UNIT CONDITIONS 3N253 3N254 3N255 3N256 3N257 3N258 3N259 Maximum instantaneous forward 3.14 A V 1.1 V voltage drop per diode F Maximum DC reverse current at rated T = 25 °C 5.0 A I µA DC blocking voltage per diode T = 125 °C R 500 A Typical junction capacitance per diode 4.0 V, 1 MHz C 25 pF J THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted) A 2KBP 2KBP 2KBP 2KBP 2KBP 2KBP 2KBP PARAMETER SYMBOL 005M 01M 02M 04M 06M 08M 10M UNIT 3N253 3N254 3N255 3N256 3N257 3N258 3N259 R 30 Typical thermal resistance (1) θJA °C/W R 11 θJL Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x 12 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 2KBP06M-E4/45 1.895 45 30 Tube 2KBP06M-E4/51 1.895 51 600 Anti-static PVC tray 3N257-E4/45 1.895 45 30 Tube 3N257-E4/51 1.895 51 600 Anti-static PVC tray RATINGS AND CHARACTERISTICS CURVES (T = 25°C unless otherwise noted) A 2.0 60 put Current (A) 1.5 6In0d Huczt iRvee sLiosatiPwvd.e iCt ho.B r0 . .M47o ux n0t.e4d7 " e Current (A) 4500 TSJin =g l1e5 S0i n°Ce-Wave erage Forward Out 01..50 CapaII( c( ApiVtk i)v) e= L 5o1.a00d (C1o2p xp e1r2 P mamds) Peak Forward Surg 123000 Av (Per Leg) 20 1.0 Cycle 0 0 20 40 60 80 100 120 140 160 170 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Figure1. Derating Curve Output Rectified Current Figure2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88532 2 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Revision: 15-Apr-08

2KBP005M thru 2KBP10M, 3N253 thru 3N259 Vishay General Semiconductor 100 100 T = 25 °C A) f =J 1.0 MHz Current ( 10 )Fp( ec Vsig = 50 mVp-p ward natic or 1 ap 10 F a us C n o o antane 0.1 TPJu l=s e2 5W °iCdth = 300 µs itcnuJ st 1 % Duty Cycle n I 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure3. Typical Forward Characteristics Per Diode Figure5. Typical Junction Capacitance Per Diode 100 A) T = 125 °C µ J nt ( urre 10 TJ = 100 °C C e s ver 1 e R s u o e an 0.1 nt a st T = 25 °C n J I 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure4. Typical Reverse Leakage Characteristics Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style KBPM 0.600(15.24) 0.125 x 45° 0.560(14.22) (3.2) 0.460(11.68) 0.500(12.70) 0.420(10.67) 0.460(11.68) 0.60 (15.2) 0.50(12.7)MIN. MIN. 0.060 0.034(0.86) (1.52) 0.028(0.76) 0.160(4.1) 0.140(3.6) DIA. 0.105(2.67) 0.200(5.08) 0.085(2.16) 0.180(4.57) Polarity shown on front side of case: positive lead by beveled corner Document Number: 88532 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 15-Apr-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 3

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