2DB1694 LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data • Epitaxial Planar Die Construction • Case: SOT-323 • Low Collector-Emitter Saturation Voltage • Case Material: Molded Plastic, “Green” Molding Compound. • Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 • Complementary NPN Type Available (2DD2656) • Moisture Sensitivity: Level 1 per J-STD-020D T • Ultra-Small Surface Mount Package • Terminals: Finish − Matte Tin annealed over Alloy 42 leadframe. C • Lead Free By Design/RoHS Compliant (Note 1) Solderable per MIL-STD-202, Method 208 U • "Green Device" (Note 2) • Terminal Connections: See Diagram D • Marking Information: See Page 3 O • Ordering Information: See Page 3 R • Weight: 0.006 grams (approximate) P W C E N B E Top View Device Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V Collector Current - Continuous IC -1 A Peak Pulse Collector Current ICM -2 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) @ TA = 25°C PD 300 mW Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C RθJA 417 °C/W Power Dissipation (Note 4) @ TA = 25°C PD 500 mW Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C RθJA 250 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO -30 ⎯ ⎯ V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO -30 ⎯ ⎯ V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -6 ⎯ ⎯ V IE = -10μA, IC = 0 Collector Cut-Off Current ICBO ⎯ ⎯ -0.1 μA VCB = -30V, IE = 0 Emitter Cut-Off Current IEBO ⎯ ⎯ -0.1 μA VEB = -6V, IC = 0 ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -180 -380 mV IC = -500mA, IB = -25mA DC Current Gain hFE 270 ⎯ 680 ⎯ VCE = -2V, IC = -100mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 16 ⎯ pF fV =C B1 M= H-1z0 V, IE = 0, Current Gain-Bandwidth Product fT ⎯ 300 ⎯ MHz fV =C E1 0=0 -M2VH,z I C = -100mA, Notes: 1. No purposefully added lead. 2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 2DB1694 1 of 4 December 2008 Document number: DS31640 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

2DB1694 0.6 1.0 0.9 IB = -5mA 0.5 W) A) 0.8 N ( NT ( 0.7 IB = -4mA O 0.4 E ATI RR 0.6 IB = -3mA P U CT DISSI 0.3 (Note 4) OR C 0.5 IB = -2mA DU WER 0.2 (Note 3) LECT 0.4 RO P, POD , COLC00..23 IB = -1mA P 0.1 -I 0.1 W E 0 0 N 0 25 50 75 100 125 150 175 200 0 1 2 3 4 5 T , AMBIENT TEMPERATURE (°C) -V , COLLECTOR-EMITTER VOLTAGE (V) A CE Fig. 1 Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 1,000 1 TA = 150°C VCE = -2V IC/IB = 20 TA = 85°C TA = 25°C ER AIN MITTE (V) NT G TA = -55°C OR-ELTAG E TO RR100 ECVN 0.1 TA = 150°C C CU COLLATIO TA = 85°C h, DFE , CE(SAT)SATUR TA = -T5A5 °=C 25°C V - 10 0.01 0.1 1 10 100 1,000 10,000 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current V) 1.2 V) 1.2 GE ( VCE = -2V GE ( IC/IB = 20 TA 1.0 TA 1.0 L L O O V V ON 0.8 ON 0.8 URN- TA = -55°C URATI TA = -55°C R T 0.6 AT 0.6 E S MITT 0.4 TA = 25°C TER 0.4 TA = 25°C E-E TA = 85°C MIT TA = 85°C S E A E- , BN) 0.2 TA = 150°C BAS 0.2 TA = 150°C VBE(O 0 , SAT) 0 - 0.1 1 10 100 1,000 E( 0.1 1 10 100 1,000 B -IC, COLLECTOR CURRENT (mA) -V -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current vs. Collector Current 2DB1694 2 of 4 December 2008 Document number: DS31640 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

2DB1694 1,000 f = 1MHz F) 100 p CE ( Cibo T N A C T CI U A D AP 10 Cobo C O R P W E 1 N 0.1 1 10 100 V , REVERSE VOLTAGE (V) R Fig. 7 Typical Capacitance Characteristics Ordering Information (Note 6) Part Number Case Packaging 2DB1694-7 SOT-323 3000/Tape & Reel Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information RP1 = Product Type Marking Code RP1 M YM = Date Code Marking Y Y = Year (ex: V = 2008) M = Month (ex: 9 = September) Date Code Key Year 2008 2009 2010 2011 2012 2013 2014 2015 Code V W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions A SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B C B 1.15 1.35 1.30 C 2.00 2.20 2.10 D - - 0.65 G G 1.20 1.40 1.30 H H 1.80 2.20 2.15 J 0.0 0.10 0.05 K M K 0.90 1.00 1.00 L 0.25 0.40 0.30 J M 0.10 0.18 0.11 D L α 0° 8° - All Dimensions in mm 2DB1694 3 of 4 December 2008 Document number: DS31640 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

2DB1694 Suggested Pad Layout Y Dimensions Value (in mm) Z C Z 2.8 T X 0.7 C Y 0.9 U C 1.9 D E 1.0 O R X E P W IMPORTANT NOTICE E Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes N without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 2DB1694 4 of 4 December 2008 Document number: DS31640 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

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