2DA1213O/Y 50V PNP POWER SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data  BVCEO > -50V  Case: SOT89  IC = -2A high Continuous Collector Current  Case material: Molded Plastic. “Green” Molding Compound.  High Gain Holds up  UL Flammability Rating 94V-0  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Moisture Sensitivity: Level 1 per J-STD-020  Halogen and Antimony Free. “Green” Device (Note 3)  Terminals: Finish - Matte Tin Plated Leads, Solderable per  Qualified to AEC-Q101 Standards for High Reliability MIL-STD-202, Method 208  Weight: 0.052 grams (Approximate) SOT89 C E B C C B E Top View Top View Device Symbol Pin Out Ordering Information (Notes 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel 2DA1213O-13 P25X 13 12 2,500 2DA1213Y-13 P25Y 13 12 2,500 2DA1213Y-13R P25Y 13 12 4,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html Marking Information xxxx = Product Type Marking Code: P25X = 2DA1213O YWW P25Y = 2DA1213Y xxxx YWW = Date Code Marking Y = Last digit of year (ex: 1 = 2011) WW = Week code 01 - 53 2DA1213O/Y 1 of 6 February 2013 Document number: DS31306 Rev: 5 - 2 www.diodes.com © Diodes Incorporated

2DA1213O/Y Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Continuous Collector Current IC -2 A Peak Pulse Current ICM -2.5 A Base Current IB -500 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 1 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 125 C/W Thermal Resistance, Junction to Leads (Note 6) RθJL 18.3 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Notes: 5. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in steady state condition. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). Thermal Characteristics and Derating Information W) 1.0 W) 120 n ( 0.8 C/ 100 atio e (° 80 p 0.6 c D=0.5 si an 60 er Dis 0.4 Resist 40 D=0.2 Single Pulse ow 0.2 al 20 D=0.05 Max P 0.00 25 50 75 100 125 150 herm 1000µ 1m 10m 100m D1=0.1 10 100 1k Temperature (°C) T Pulse Width (s) Derating Curve Transient Thermal Impedance 100 ) Single Pulse. T =25°C W amb ( n o ati p 10 si s Di r e w o P x 1 Ma 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 2DA1213O/Y 2 of 6 February 2013 Document number: DS31306 Rev: 5 - 2 www.diodes.com © Diodes Incorporated

2DA1213O/Y Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -50 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 7) BVCEO -50 — — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -6 — — V IE = -100µA Collector Cut-off Current ICBO — — -100 nA VCB = -50V Emitter Cut-off Current IEBO — — -100 nA VEB = -5V 2DA1213O 70 140 IC = -500mA, VCE = -2V DC Current Gain (Note 8) 2DA1213Y hFE 120 — 240 — IC = -500mA, VCE = -2V 2DA1213O, 2DA1213Y 20 — IC = -2A, VCE = -2V Collector-Emitter Saturation Voltage (Note 7) VCE(sat) — — -0.5 V IC = -1A, IB = -50mA Base-Emitter Turn-On Voltage (Note 7) VBE(sat) — — -1.2 V IC = -1A, IB = -50mA Transition Frequency fT — 160 — MHz IfC = = 1 -0100M0HmzA , VCE = -2V, Output Capacitance Cobo — 17 — pF VCB = -10V, IE = 0, f = 1MHz Turn-On Time ton — 25 — ns SFatollr aTgime eT ime tt((sf)) —— 11320 —— nnss VIBC1 E== --I2B2V ,= I C-5 =0 m-1AA , Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1.0 200 IB = -10mA TA = 150°C VCE = -2V A) 0.8 ENT ( IB = -8mA AIN 150 TA = 85°C R G UR 0.6 NT C IB = -6mA E OR RR 100 TA = 25°C CT CU LE 0.4 IB = -4mA DC OL , E -I, CC 0.2 IB = -2mA hF 50 TA = -55°C 0 0 0 1 2 3 4 5 0.001 0.01 0.1 1 10 -V , COLLECTOR-EMITTER VOLTAGE (V) -I , COLLECTOR CURRENT (A) CE C Figure 1 Typical Collector Current vs. Collector-Emitter Voltage Figure 2 Typical DC Current Gain vs. Collector Current (2DA1213O) 2DA1213O/Y 3 of 6 February 2013 Document number: DS31306 Rev: 5 - 2 www.diodes.com © Diodes Incorporated

2DA1213O/Y 1 V) 1.2 E ( G VCE = -2V A R IC/IB = 20 LT 1 E O TV) V LLECTOR-EMITON VOLTAGE ( 0.1 TA = 85°C TA = 150°C TER TURN-ON 00..68 TTAA == 2-55°5C°C OTI T CA MI -V, CE(SAT)SATUR TA = -55°C TA = 25°C , BASE-EN)00..24 TTAA == 8155°0C°C O E( B 0.01 V 0 0.0001 0.001 0.01 0.1 1 10 - 0.0001 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) -IC, COLLECTOR CURRENT (A) Figure 3 Typical Collector-Emitter Saturation Voltage Figure 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current vs. Collector Current V) 1.2 60 E ( IC/IB = 20 G TA 1.0 F) f = 1MHz L p VO E ( 45 ON 0.8 ANC TI T RA TA = -55°C ACI U P T 0.6 A 30 A C R S TA = 25°C UT E P T 0.4 T MIT TA = 85°C OU SE-E 0.2 TA = 150°C C, obo15 A B , T) SA 0 0 E( 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 B V - -IC, COLLECTOR CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 5 Typical Base-Emitter Saturation Voltage Figure 6 Typical Output Capacitance Characteristics vs. Collector Current z)200 H M T ( C U D150 O R P H T D WI100 D N A B N- AI G 50 VCE = -6V T f = 100MHz N E R R U C 0 , T 0 10 20 30 40 50 60 70 80 90 100 f -I , COLLECTOR CURRENT (mA) C Figure 7 Typical Gain-Bandwidth Product vs. Collector Current 2DA1213O/Y 4 of 6 February 2013 Document number: DS31306 Rev: 5 - 2 www.diodes.com © Diodes Incorporated

2DA1213O/Y Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D1 R 0.200 C SOT89 Dim Min Max H1 H A 1.40 1.60 E B 0.44 0.62 B1 0.35 0.54 C 0.35 0.44 B1 B L D 4.40 4.60 D1 1.62 1.83 e E 2.29 2.60 8° (4X) e 1.50 Typ H 3.94 4.25 H1 2.63 2.93 A L 0.89 1.20 All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions Value (in mm) X 0.900 X2 (2x) X1 1.733 Y1 X2 0.416 Y3 Y4 Y 1.300 Y1 4.600 Y Y2 Y2 1.475 Y3 0.950 C Y4 1.125 C 1.500 X (3x) 2DA1213O/Y 5 of 6 February 2013 Document number: DS31306 Rev: 5 - 2 www.diodes.com © Diodes Incorporated

2DA1213O/Y IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com 2DA1213O/Y 6 of 6 February 2013 Document number: DS31306 Rev: 5 - 2 www.diodes.com © Diodes Incorporated