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1SMA5937BT3G产品简介:
ICGOO电子元器件商城为您提供1SMA5937BT3G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 1SMA5937BT3G价格参考¥1.22-¥5.03。ON Semiconductor1SMA5937BT3G封装/规格:二极管 - 齐纳 - 单, Zener Diode 33V 1.5W ±5% Surface Mount SMA。您可以下载1SMA5937BT3G参考资料、Datasheet数据手册功能说明书,资料中有1SMA5937BT3G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE ZENER 33V 1.5W SMA稳压二极管 33V 1.5W |
产品分类 | 单二极管/齐纳分离式半导体 |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,稳压二极管,ON Semiconductor 1SMA5937BT3G- |
数据手册 | |
产品型号 | 1SMA5937BT3G |
PCN组件/产地 | |
不同If时的电压-正向(Vf) | 1.5V @ 200mA |
不同 Vr时的电流-反向漏电流 | 500nA @ 25.1V |
产品目录页面 | |
产品种类 | |
供应商器件封装 | SMA |
其它名称 | 1SMA5937BT3G-ND |
功率-最大值 | 1.5W |
功率耗散 | 500 mW |
包装 | 带卷 (TR) |
商标 | ON Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
容差 | ±5% |
封装 | Reel |
封装/外壳 | DO-214AC,SMA |
封装/箱体 | SMA |
工作温度 | -65°C ~ 150°C |
工厂包装数量 | 5000 |
最大反向漏泄电流 | 500 nA |
最大工作温度 | + 150 C |
最大齐纳阻抗 | 33 Ohms |
最小工作温度 | - 65 C |
标准包装 | 5,000 |
电压-齐纳(标称值)(Vz) | 33V |
电压容差 | 5 % |
系列 | 1SMA5913BT3 |
配置 | Single |
阻抗(最大值)(Zzt) | 33 欧姆 |
齐纳电压 | 33 V |
齐纳电流 | 45 mA |
1SMA59xxBT3G Series, SZ1SMA59xxBT3G Series 1.5 Watt Plastic Surface Mount Zener Voltage Regulators www.onsemi.com This complete new line of 1.5 Watt Zener Diodes offers the following advantages. Features • Standard Zener Breakdown Voltage Range − 3.3 V to 68 V SMA • ESD Rating of Class 3 (> 16 kV) per Human Body Model CASE 403D • STYLE 1 Flat Handling Surface for Accurate Placement • Package Design for Top Slide or Bottom Circuit Board Mounting • Low Profile Package • Ideal Replacement for MELF Packages CATHODE ANODE • AEC−Q101 Qualified and PPAP Capable − SZ1SMA59xxBT3G • SZ Prefix for Automotive and Other Applications Requiring Unique MARKING DIAGRAM Site and Control Change Requirements • These are Pb−Free Devices* 8xxB Mechanical Characteristics: AYWW(cid:2) CASE: Void-free, transfer-molded plastic FINISH: All external surfaces are corrosion resistant with readily solderable leads MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 8xxB = Device Code (Refer to page 2) 260°C for 10 seconds A = Assembly Location Y = Year POLARITY: Cathode indicated by molded polarity notch or cathode WW = Work Week band (cid:2) = Pb−Free Package FLAMMABILITY RATING: UL 94 V−0 @ 0.125 in ORDERING INFORMATION MAXIMUM RATINGS Device Package Shipping† Rating Symbol Value Unit 1SMA59xxBT3G SMA 5,000 / DC Power Dissipation @ TL = 75°C, PD (Pb−Free) Tape & Reel Measured Zero Lead Length (Note 1) 1.5 W Derate above 75°C 20 mW/°C SZ1SMA59xxBT3G SMA 5,000 / Thermal Resistance, Junction−to−Lead R(cid:2)JL 50 °C/W (Pb−Free) Tape & Reel DC Power Dissipation @ TA = 25°C (Note 2) PD 0.5 W †For information on tape and reel specifications, Derate above 25°C 4.0 mW/°C including part orientation and tape sizes, please Thermal Resistance, Junction−to−Ambient R(cid:2)JA 250 °C/W refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Operating and Storage Temperature Range TJ, Tstg −65 to °C +150 DEVICE MARKING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See specific marking information in the device marking device. If any of these limits are exceeded, device functionality should not be column of the Electrical Characteristics table on page 2 of assumed, damage may occur and reliability may be affected. this data sheet. 1. 1 in square copper pad, FR−4 board. 2. FR−4 Board, using ON Semiconductor minimum recommended footprint. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2016 − Rev. 10 1SMA5913BT3/D
1SMA59xxBT3G Series, SZ1SMA59xxBT3G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max. @ IF = 200 mA for all types) I Symbol Parameter IF VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current VZ VR V IR VF ZZK Maximum Zener Impedance @ IZK IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF IZM Maximum DC Zener Current Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max. @ IF = 200 mA for all types) Zener Voltage (Note 4) Zener Impedance Leakage Current Device VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR IZM Device* (Note 3) Marking Min Nom Max mA (cid:2) (cid:2) mA (cid:3)A Volts mA(dc) 1SMA5913BT3G 813B 3.13 3.3 3.47 113.6 10 500 1.0 50 1.0 455 1SMA5914BT3G 814B 3.42 3.6 3.78 104.2 9.0 500 1.0 35.5 1.0 417 1SMA5915BT3G 815B 3.70 3.9 4.10 96.1 7.5 500 1.0 12.5 1.0 385 1SMA5916BT3G 816B 4.08 4.3 4.52 87.2 6.0 500 1.0 2.5 1.0 349 1SMA5917BT3G 817B 4.46 4.7 4.94 79.8 5.0 500 1.0 2.5 1.5 319 1SMA5918BT3G 818B 4.84 5.1 5.36 73.5 4.0 350 1.0 2.5 2.0 294 1SMA5919BT3G 819B 5.32 5.6 5.88 66.9 2.0 250 1.0 2.5 3.0 268 1SMA5920BT3G 820B 5.89 6.2 6.51 60.5 2.0 200 1.0 2.5 4.0 242 1SMA5921BT3G 821B 6.46 6.8 7.14 55.1 2.5 200 1.0 2.5 5.2 221 1SMA5922BT3G 822B 7.12 7.5 7.88 50 3.0 400 0.5 2.5 6.0 200 1SMA5923BT3G 823B 7.79 8.2 8.61 45.7 3.5 400 0.5 2.5 6.5 183 1SMA5924BT3G 824B 8.64 9.1 9.56 41.2 4.0 500 0.5 2.5 7.0 165 1SMA5925BT3G 825B 9.5 10 10.5 37.5 4.5 500 0.25 2.5 8.0 150 1SMA5926BT3G 826B 10.45 11 11.55 34.1 5.5 550 0.25 0.5 8.4 136 1SMA5927BT3G 827B 11.4 12 12.6 31.2 6.5 550 0.25 0.5 9.1 125 1SMA5928BT3G 828B 12.35 13 13.65 28.8 7.0 550 0.25 0.5 9.9 115 1SMA5929BT3G 829B 14.25 15 15.75 25 9.0 600 0.25 0.5 11.4 100 1SMA5930BT3G 830B 15.2 16 16.8 23.4 10 600 0.25 0.5 12.2 94 1SMA5931BT3G 831B 17.1 18 18.9 20.8 12 650 0.25 0.5 13.7 83 1SMA5932BT3G 832B 19 20 21 18.7 14 650 0.25 0.5 15.2 75 1SMA5933BT3G 833B 20.9 22 23.1 17 17.5 650 0.25 0.5 16.7 68 1SMA5934BT3G 834B 22.8 24 25.2 15.6 19 700 0.25 0.5 18.2 63 1SMA5935BT3G 835B 25.65 27 28.35 13.9 23 700 0.25 0.5 20.6 56 1SMA5936BT3G 836B 28.5 30 31.5 12.5 26 750 0.25 0.5 22.8 50 1SMA5937BT3G 837B 31.35 33 34.65 11.4 33 800 0.25 0.5 25.1 45 1SMA5938BT3G 838B 34.2 36 37.8 10.4 38 850 0.25 0.5 27.4 42 1SMA5939BT3G 839B 37.05 39 40.95 9.6 45 900 0.25 0.5 29.7 38 1SMA5940BT3G 840B 40.85 43 45.15 8.7 53 950 0.25 0.5 32.7 35 1SMA5941BT3G 841B 44.65 47 49.35 8.0 67 1000 0.25 0.5 35.8 32 1SMA5942BT3G 842B 48.45 51 53.55 7.3 70 1100 0.25 0.5 38.8 29 1SMA5943BT3G 843B 53.2 56 58.8 6.7 86 1300 0.25 0.5 42.6 27 1SMA5945BT3G 845B 64.6 68 71.4 5.5 120 1700 0.25 0.5 51.7 22 3. Tolerance and Voltage Regulation Designation − The type number listed indicates a tolerance of ±5%. 4. VZ limits are to be guaranteed at thermal equilibrium. *Include SZ-prefix devices where applicable. www.onsemi.com 2
1SMA59xxBT3G Series, SZ1SMA59xxBT3G Series RATING AND TYPICAL CHARACTERISTIC CURVES (T = 25°C) A 4 100 S) T T A W N ( 3.2 A) O m ATI T ( 10 P N R DISSI 2.4 TL CURRE WE 1.6 ER PO EN 1 UM , ZZ M 0.8 I XI MA TA , D P 0 0.1 0 25 50 75 100 125 150 0 2 4 6 8 10 T, TEMPERATURE (°C) VZ, ZENER VOLTAGE (VOLTS) Figure 1. Steady State Power Derating Figure 2. V − 3.3 thru 10 Volts Z 100 10 C) °V/ T (m 8 VZ @ IZT NT (mA) 10 FFICIEN 6 RE OE 4 R C R CU URE 2 E T N A E 1 R Z E 0 I, Z MP E , TZ-2 V θ 0.1 -4 0 10 20 30 40 50 60 70 80 2 4 6 8 10 12 VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS) Figure 3. V = 12 thru 68 Volts Figure 4. Zener Voltage − 3.3 to 12 Volts Z 100 C) °T (mV/ 70 VZ @ IZT HMS) 100 CIEN 50 E (O IZ(dc) = 1 mA EFFI ANC O D E C 30 MPE UR C I RAT AMI 10 10 mA E 20 N P Y M D , TEZ Z, Z 20 mA IZ(rms) = 0.1 IZ(dc) V θ 10 10 20 30 50 70 100 10 100 VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS) Figure 5. Zener Voltage − 12 to 68 Volts Figure 6. Effect of Zener Voltage www.onsemi.com 3
1SMA59xxBT3G Series, SZ1SMA59xxBT3G Series RATING AND TYPICAL CHARACTERISTIC CURVES (T = 25°C) A 1000 10 NONREPETITIVE, EXPONENTIAL MEASURED @ PULSE WAVEFORM, TJ = 25°C NCE (pF) MEASURED @ ZERO BIAS WER (kW) 1 TA 100 VZ/2 PO CI K A A P E C, CA , Ppk 0.1 P TJ = 25°C 10 0.01 10 100 0.01 0.1 1 10 BREAKDOWN VOLTAGE (VOLTS) TP, PULSE WIDTH (ms) Figure 7. Capacitance Curve Figure 8. Typical Pulse Rating Curve 120 120 ≤ 10 (cid:3)s TA = 25°C 8/20 (cid:3)s WAVEFORM %)100 PW (ID) IS DEFINED AS THE 100 AS DEFINED BY ANSI C62.1 URRENT ( 80 PIpEpmAK VALUE PDOECINATY WS HTOER 5E0 %TH OEF P IpEpA.K CURRENT 0ULSE.9 IP%)EAK80 AND IEC 801-5. K PULSE C 60 HALF VALUE - Ipp/2 , PEAK PmURRENT ( 60 0.5 IPEAK PEA 40 10/1000 (cid:3)s WAVEFORM IppC 40 , m AS DEFINED BY R.E.A. p p 20 20 I td 0.1 IPEAK T = 8 (cid:3)s 0 0 0 1 2 3 4 5 0 0.02 0.04 0.06 0.08 0.1 t, TIME (ms) T t, TIME (ms) 20 (cid:3)s Figure 9. Pulse Waveform Figure 10. Pulse Waveform www.onsemi.com 4
MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMA CASE 403D ISSUE H STYLE 1 STYLE 2 DATE 23 SEP 2015 SCALE 1:1 HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, E 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX b D A 1.97 2.10 2.20 0.078 0.083 0.087 A1 0.05 0.10 0.20 0.002 0.004 0.008 b 1.27 1.45 1.63 0.050 0.057 0.064 c 0.15 0.28 0.41 0.006 0.011 0.016 D 2.29 2.60 2.92 0.090 0.103 0.115 POLARITY INDICATOR OPTIONAL AS NEEDED E 4.06 4.32 4.57 0.160 0.170 0.180 (SEE STYLES) HE 4.83 5.21 5.59 0.190 0.205 0.220 L 0.76 1.14 1.52 0.030 0.045 0.060 GENERIC MARKING DIAGRAM* A A1 xxxx xxxx L c AYWW(cid:2) AYWW(cid:2) STYLE 1 STYLE 2 SOLDERING FOOTPRINT* xxxx = Specific Device Code 4.000 A = Assembly Location 0.157 Y = Year WW = Work Week (cid:2) = Pb−Free Package *This information is generic. Please refer to 2.000 device data sheet for actual part marking. 0.079 Pb−Free indicator, “G” or microdot “ (cid:2)”, may or may not be present. 2.000 0.079 (cid:2) (cid:3) mm SCALE 8:1 inches STYLE 1: STYLE 2: PIN 1.CATHODE (POLARITY BAND) NO POLARITY *For additional information on our Pb−Free strategy and soldering 2.ANODE details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. DOCUMENT NUMBER: 98AON04079D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DESCRIPTION: SMA PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: TECHNICAL SUPPORT Email Requests to: orderlit@onsemi.com North American Technical Support: Europe, Middle East and Africa Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 ON Semiconductor Website: www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ www.onsemi.com 1