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  • 型号: 1SMA13AT3G
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
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1SMA13AT3G产品简介:

ICGOO电子元器件商城为您提供1SMA13AT3G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 1SMA13AT3G价格参考¥0.89-¥0.89。ON Semiconductor1SMA13AT3G封装/规格:TVS - 二极管, 。您可以下载1SMA13AT3G参考资料、Datasheet数据手册功能说明书,资料中有1SMA13AT3G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

电路保护

描述

TVS DIODE 13VWM 21.5VC SMATVS 二极管 - 瞬态电压抑制器 ZEN SMA TVS

产品分类

TVS - 二极管

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,TVS二极管,TVS 二极管 - 瞬态电压抑制器,ON Semiconductor 1SMA13AT3G-

数据手册

点击此处下载产品Datasheet

产品型号

1SMA13AT3G

PCN组件/产地

点击此处下载产品Datasheet

不同频率时的电容

860pF @ 1MHz

产品种类

TVS 二极管 - 瞬态电压抑制器

供应商器件封装

SMA

其它名称

1SMA13AT3GOSDKR

击穿电压

6.7 V to 91.25 V

功率-峰值脉冲

400W

包装

Digi-Reel®

单向通道

1

双向通道

-

商标

ON Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

DO-214AC,SMA

封装/箱体

SMA

尺寸

2.6 mm W x 4.32 mm L x 2.2 mm H

峰值浪涌电流

40 A

峰值脉冲功率耗散

400 W

工作温度

-65°C ~ 150°C (TJ)

工作电压

13 V

工厂包装数量

5000

应用

通用

最大工作温度

+ 150 C

最小工作温度

- 65 C

极性

Unidirectional

标准包装

1

电压-击穿(最小值)

14.4V

电压-反向关态(典型值)

13V

电压-箝位(最大值)@Ipp

21.5V

电容

860 pF

电流-峰值脉冲(10/1000µs)

-

电源线路保护

端接类型

SMD/SMT

类型

齐纳

系列

1SMA5.0AT3

钳位电压

21.5 V

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PDF Datasheet 数据手册内容提取

TVS Diodes Surface Mount > 400W > 1SMA5.0AT3G Series 1SMA5.0AT3G Series Pb Description The 1SMA5.0AT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The 1SMA5.0AT3G series is supplied in the Littelfuse exclusive, cost-effective, highly reliable package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Features • Working Peak Reverse Voltage Range − 5.0 V to 78 V Maximum Ratings and Thermal Characteristics • Standard Zener Breakdown Voltage Range − 6.7 V to 91.25 V Parameter Symbol Value Unit • Peak Power − 400 W @ 1 ms Peak Power Dissipation (Note 1) @ T = L P 400 W • ESD Rating of Class 3 (> 16 kV) per Human Body Model 25°C, Pulse Width = 1 ms PK • Response Time is Typically < 1 ns • Flat Handling Surface for Accurate Placement DC Power Dissipation @ T = 75°C L 1.0 W Measured Zero Lead Length (Note 2) PD • Package Design for Top Slide or Bottom Circuit Derate Above 75°C 20 mW/°C Board Mounting Thermal Resistance from Junction R JL 50 °C/W to−Lead • Low Profile Package Bi-directional • These are Pb−Free Device DC Power Dissipation (Note 3) P 0.5 W @ TA = 25°C D Derate Above 25°C 4.0 mW/°C Functional Diagram Thermal Resistance from Junction–to– R0JA 250 °C/W Ambient Cathode Anode Forward Surge Current (Note 4) @ TA = 25°C I 40 A FSM Additional Information Operating and Storage Temperature -65 to T T °C Range J, stg +150 Uni-directional Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may Datasheet Resources Samples occur and reliability may be affected. 1. 10 X 1000 µs, non−repetitive. 2. 1” square copper pad, FR−4 board. 3. FR−4 board, using Littelfuse minimum recommended footprint, as shown in 403D-02 case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17

TVS Diodes Surface Mount > 400W > 1SMA5.0AT3G Series I-V Curve Characteristics (T = 25°C unless otherwise noted, V = 3.5 V Max. @ I= 30 A for all types) (Note 5) A F F Symbol Parameter I IF IPP Maximum Reverse Peak Pulse Current V Clamping Voltage @ I C PP V Working Peak Reverse Voltage RWM VC VBRVRWM I Maximum Reverse Leakage Current @ V IR VF V R RWM IT V Breakdown Voltage @ I BR T I Test Current T I Maximum Temperature Coefficient of V IPP F BR V Forward Voltage @ I F F 5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive duty cycle. 5. 1/2 sine wave or equivalent, PW = 8.3 ms non−repetitive duty cycle © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17

TVS Diodes Surface Mount > 400W > 1SMA5.0AT3G Series Electrical Characteristics V @ I Breakdown Voltage C PP (Note 8) V I @ C Typ. RWM R V @ I (V) (Note 7) @ I V I (Note 9) Device* Device (Note 6) V BR T T C PP RWM Marking Volts µA MIN NOM MAX mA Volts Amps pF 1SMA5.0AT3G QE 5.0 400 6.4 6.7 7.0 10 9.2 43.5 2035 1SMA6.0AT3G QG 6.0 400 6.67 7.02 7.37 10 10.3 38.8 1730 1SMA6.5AT3G QK 6.5 250 7.22 7.6 7.98 10 11.2 35.7 1605 1SMA8.0AT3G QR 8.0 25 8.89 9.36 9.83 1 13.6 29.4 1035 1SMA8.5AT3G QT 8.5 5.0 9.44 9.92 10.4 1 14.4 27.8 1265 1SMA9.0AT3G QV 9.0 2.5 10 10.55 11.1 1 15.4 26.0 1200 1SMA10AT3G QX 10 2.5 11.1 11.7 12.3 1 17.0 23.5 1090 1SMA11AT3G QZ 11 2.5 12.2 12.85 13.5 1 18.2 22.0 1000 1SMA12AT3G RE 12 2.5 13.3 14.0 14.7 1 19.9 20.1 925 1SMA13AT3G RG 13 2.5 14.4 15.15 15.9 1 21.5 18.6 860 1SMA14AT3G RH 14 2.5 15.6 16.4 17.2 1 23.2 17.2 800 1SMA15AT3G RM 15 2.5 16.7 17.6 18.5 1 24.4 16.4 758 1SMA16AT3G RP 16 2.5 17.8 18.75 19.7 1 26.0 15.4 715 1SMA17AT3G RR 17 2.5 18.9 19.9 20.9 1 27.6 14.5 680 1SMA18AT3G RT 18 2.5 20 21.05 22.1 1 29.2 13.7 645 1SMA20AT3G RV 20 2.5 22.2 23.35 24.5 1 32.4 12.3 585 1SMA22AT3G RX 22 2.5 24.4 25.65 26.9 1 35.5 11.3 540 1SMA24AT3G RZ 24 2.5 26.7 28.1 29.5 1 38.9 10.3 500 1SMA26AT3G SE 26 2.5 28.9 30.4 31.9 1 42.1 9.5 460 1SMA28AT3G SG 28 2.5 31.1 32.75 34.4 1 45.4 8.8 430 1SMA30AT3G SK 30 2.5 33.3 35.05 36.8 1 48.4 8.3 405 1SMA33AT3G SM 33 2.5 36.7 38.65 40.6 1 53.3 7.5 375 1SMA36AT3G SP 36 2.5 40 42.1 44.2 1 58.1 6.9 345 1SMA40AT3G SR 40 2.5 44.4 46.75 49.1 1 64.5 6.2 315 1SMA43AT3G ST 43 2.5 47.8 50.3 52.8 1 69.4 5.8 295 1SMA45AT3G SV 45 2.5 50 52.65 55.3 1 72.2 5.5 280 1SMA48AT3G SX 48 2.5 53.3 56.1 58.9 1 77.4 5.2 265 1SMA54AT3G TE 54 2.5 60 63.15 66.3 1 87.1 4.6 240 1SMA58AT3G TG 58 2.5 64.4 67.8 71.5 1 93.6 4.3 225 1SMA70AT3G TP 70 2.5 77.8 81.9 86.0 1 113 3.5 190 6. A transient suppressor is normally selected according to the working peak reverse voltage (V ), which should be equal to or greater than the DC or continuous peak operating voltage level. RWM 7. V measured at pulse test current I at an ambient temperature of 25°C. BR T 8. Surge current waveform per Figure 2 and derate per Figure 3. 9. Bias voltage = 0 V, F = 1.0 MHz, T = 25°C. J †Please see 1SMA10CAT3 to 1SMA75CAT3 for Bidirectional devices. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17

TVS Diodes Surface Mount > 400W > 1SMA5.0AT3G Series Ratings and Characteristic Curves Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform 100 NONREPETITIVE PULSE WAVEFORM W) SHOWN IN FIGURE 2. k R ( 10 TA = 25°C E W O P K A E P 1 , pk P 0.1 10 4 0.001 0.01 0.11 10 tP, PULSE WIDTH (ms) Figure 3 - Pulse Derating Curve Figure 4. Typical Junction Capacitance vs. Bias Voltage 10,000 TJ = 25°C F = 1 MHz 1SMA5.0AT3G 1,000 pF) 1SMA10AT3G E ( C N A 1SMA36AT3G T 100 CI A P A 1SMA64AT3G C C, 10 1 1 10 100 BIAS VOLTAGE (VOLTS) Figure 5. Steady State Power Derating S) 6 T T A W N ( 5 O ATI P 4 SI S DI ER 3 @ TL = 75°C OW PD = 1.5 W P M 2 U XIM 1 @ TA = 25°C MA PD = 0.5 W , D P 0 0 25 50 75 100 125 150 T, TEMPERATURE (°C) © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17

TVS Diodes Surface Mount > 400W > 1SMA5.0AT3G Series Dimensions Soldering Footrpint HE E 4.000 0.157 bD D POOPLTAIORNITAYL IANSD INCEAETDOERD 2.000 (SEE STYLES) 0.079 A 2.000 A1 0.079 L c mm SCALE 8:1 inches Inches Millimeters Dim Min Nom Max Min Nom Max ORDERING INFORMATION A 0.078 0.083 0.087 1.97 2.10 2.20 A1 0.002 0.004 0.008 0.05 0.10 0.20 Device Package Shipping† b 0.050 0.057 0.064 1.27 1.45 1.63 SMA 5,000 / 1SMAxxAT3G c 0.006 0.011 0.016 0.15 0.28 0.41 (Pb−Free) Tape & Reel D 0.090 0.103 0.115 2.29 2.60 2.92 E 0.160 0.170 0.180 4.06 4.32 4.57 H 0.190 0.205 0.220 4.83 5.21 5.59 Flow/Wave Soldering (Solder Dipping) E L 0.030 0.045 0.060 0.76 1.14 1.52 Peak Temperature : 260OC NOTES: Dipping Time : 10 seconds 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L. STYLE 1: Physical Specifications PIN 1. CATHODE (POLARITY BAND) 2. ANODE Void-free, transfer-molded, thermosetting Case plastic Part Marking System Cathode indicated by molded polarity Polarity notch xx WW Mounting Position Any AY All external surfaces are corrosion Finish resistant and leads are readily solderable xx = Device Code (Refer to page 3) A= Assembly Location Y= Year WW = Work Week Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17