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  • 型号: 1PS70SB82,115
  • 制造商: NXP Semiconductors
  • 库位|库存: xxxx|xxxx
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1PS70SB82,115产品简介:

ICGOO电子元器件商城为您提供1PS70SB82,115由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 1PS70SB82,115价格参考¥1.24-¥4.49。NXP Semiconductors1PS70SB82,115封装/规格:二极管 - 整流器 - 单, 肖特基 表面贴装 二极管 15V 30mA(DC) SC-70。您可以下载1PS70SB82,115参考资料、Datasheet数据手册功能说明书,资料中有1PS70SB82,115 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 15V 0.03A SOT323肖特基二极管与整流器 DIODE SCHOTTKY

产品分类

单二极管/整流器分离式半导体

品牌

NXP Semiconductors

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,肖特基二极管与整流器,NXP Semiconductors 1PS70SB82,115-

数据手册

点击此处下载产品Datasheet

产品型号

1PS70SB82,115

PCN封装

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不同If时的电压-正向(Vf)

700mV @ 30mA

不同 Vr、F时的电容

1pF @ 0V,1MHz

不同 Vr时的电流-反向漏电流

200nA @ 1V

二极管类型

肖特基

产品

Schottky Diodes

产品种类

肖特基二极管与整流器

供应商器件封装

SOT-323

其它名称

568-6780-6

包装

Digi-Reel®

反向恢复时间(trr)

-

商标

NXP Semiconductors

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

SC-70,SOT-323

封装/箱体

SOT-323

峰值反向电压

15 V

工作温度-结

125°C (最大)

工作温度范围

+ 125 C

工厂包装数量

3000

技术

Silicon

最大反向漏泄电流

0.2 uA

最大工作温度

+ 125 C

最小工作温度

- 65 C

标准包装

1

正向电压下降

0.7 V

正向连续电流

0.03 A

热阻

625°C/W Ja

电压-DC反向(Vr)(最大值)

15V

电流-平均整流(Io)

30mA(DC)

速度

小信号 =< 200mA(Io),任意速度

配置

Single

零件号别名

1PS70SB82 T/R

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PDF Datasheet 数据手册内容提取

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier (double) diodes Product data sheet 2001 Jan 18

NXP Semiconductors Product data sheet 1PS70SB82; 1PS70SB84; Schottky barrier (double) diodes 1PS70SB85; 1PS70SB86 FEATURES PINNING • Low forward voltage PIN SYMBOL 3 • Very small SMD plastic package 1PS70SB82 1 2 • Low diode capacitance. 1 a n.c. MLC357 2 n.c. APPLICATIONS Fig.2 1PS70SB82 single 3 k diode configuration • UHF mixers 1PS70SB84 (symbol). • Sampling circuits 1 a 1 • Modulators 2 k 2 • Phase detectors. 3 k and a 1 2 3 1PS70SB85 DESCRIPTION 1 2 1 a 1 Planar Schottky barrier diodes 2 a MLC358 2 encapsulated in a SOT323 (SC-70) 3 k and k very small plastic SMD package. 1 2 Single diodes and double diodes with 1PS70SB86 Fig.3 1PS70SB84 diode different pinning are available. ESD configuration (symbol). 1 k 1 sensitive device, observe handling 2 k precautions. 2 3 a and a 1 2 3 MARKING 1 2 MARKING TYPE NUMBER CODE MLC359 1PS70SB82 88 1PS70SB84 87 Fig.4 1PS70SB85 diode handbook, 2 columns 3 configuration (symbol). 1PS70SB85 85 1PS70SB86 86 1 2 3 Top view MBC870 1 2 MLC360 Fig.1 Simplified outline (SOT323; SC-70) and Fig.5 1PS70SB86 diode pin configuration. configuration (symbol). 2001 Jan 18 2

NXP Semiconductors Product data sheet 1PS70SB82; 1PS70SB84; Schottky barrier (double) diodes 1PS70SB85; 1PS70SB86 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT Per diode V continuous reverse voltage − 15 V R I continuous forward current − 30 mA F T storage temperature −65 +150 °C stg T junction temperature − 125 °C j THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient note 1 625 K/W th j-a Note 1. Refer to (SOT323; SC-70) standard mounting conditions. ELECTRICAL CHARACTERISTICS T = 25 °C; unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode V forward voltage see Fig.6 F I = 1 mA − 340 mV F I = 30 mA − 700 mV F r differential diode forward resistance f = 1 MHz; I = 5 mA; see Fig.9 12 − Ω D F I continuous reverse current V = 1 V; note 1; see Fig.7 − 0.2 μA R R C diode capacitance V = 0; f = 1 MHz; see Fig.8 1 − pF d R Note 1. Pulsed test: t = 300 μs; δ = 0.02. p 2001 Jan 18 3

NXP Semiconductors Product data sheet 1PS70SB82; 1PS70SB84; Schottky barrier (double) diodes 1PS70SB85; 1PS70SB86 103 MGT835 103 MGT836 handbook, halfpage handbook, halfpage IR IF (μA) (mA) 102 (1) (2) (3) 102 (1) 10 (2) 1 10 10−1 (2) (3) (1) (3) 1 10−2 0 0.4 0.8 1.2 VF (V) 1.6 0 5 10 VR (V) 15 (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. Fig.6 Forward current as a function of forward Fig.7 Reverse current as a function of reverse voltage; typical values. voltage; typical values. 1 MGT837 103 MGT838 handbook, halfpage handbook, halfpage Cd rD (pF) (Ω) 0.8 102 0.6 10 0.4 1 0 2 4 6 8 VR (V)10 10−1 1 10 IF (mA) 102 f = 1 MHz; Tamb = 25 °C. f = 1 MHz; Tamb = 25 °C. Fig.8 Diode capacitance as a function of reverse Fig.9 Differential diode forward resistance as a voltage; typical values. function of forward current; typical values. 2001 Jan 18 4

NXP Semiconductors Product data sheet 1PS70SB82; 1PS70SB84; Schottky barrier (double) diodes 1PS70SB85; 1PS70SB86 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D B E A X y HE v M A 3 Q A A1 c 1 2 e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x bp c D E e e1 HE Lp Q v w 1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23 mm 0.1 1.3 0.65 0.2 0.2 0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOT323 SC-70 97-02-28 2001 Jan 18 5

NXP Semiconductors Product data sheet 1PS70SB82; 1PS70SB84; Schottky barrier (double) diodes 1PS70SB85; 1PS70SB86 DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Jan 18 6

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp7 Date of release: 2001 Jan 18 Document order number: 9397 750 07669

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