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  • 型号: 1PMT5927BT1G
  • 制造商: ON Semiconductor
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1PMT5927BT1G产品简介:

ICGOO电子元器件商城为您提供1PMT5927BT1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 1PMT5927BT1G价格参考。ON Semiconductor1PMT5927BT1G封装/规格:二极管 - 齐纳 - 单, Zener Diode 12V 3.2W ±5% 表面贴装 Powermite。您可以下载1PMT5927BT1G参考资料、Datasheet数据手册功能说明书,资料中有1PMT5927BT1G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE ZENER 12V 3.2W POWERMITE稳压二极管 12V 3.2W Powermite

产品分类

单二极管/齐纳分离式半导体

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,稳压二极管,ON Semiconductor 1PMT5927BT1G-

数据手册

点击此处下载产品Datasheet

产品型号

1PMT5927BT1G

不同If时的电压-正向(Vf)

1.25V @ 200mA

不同 Vr时的电流-反向漏电流

1µA @ 9.1V

产品种类

稳压二极管

供应商器件封装

Powermite

其它名称

1PMT5927BT1GOS

功率-最大值

3.2W

功率耗散

500 mW

包装

带卷 (TR)

商标

ON Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

容差

±5%

封装

Reel

封装/外壳

DO-216AA

封装/箱体

DO-216AA

工作温度

-55°C ~ 150°C

工厂包装数量

3000

最大反向漏泄电流

1 uA

最大工作温度

+ 150 C

最大齐纳阻抗

6.5 Ohms

最小工作温度

- 55 C

标准包装

3,000

电压-齐纳(标称值)(Vz)

12V

电压容差

5 %

系列

1PMT5927B

配置

Single

阻抗(最大值)(Zzt)

6.5 欧姆

齐纳电压

12 V

齐纳电流

200 mA

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PDF Datasheet 数据手册内容提取

1PMT5920B Series 3.2 Watt Plastic Surface Mount ® POWERMITE Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its www.onsemi.com unique heat sink design. The POWERMITE package has the same thermal performance as the SMA while being 50% smaller in PLASTIC SURFACE MOUNT footprint area and delivering one of the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use 3.2 WATT ZENER DIODES in cellular phones, portable devices, business machines and many 6.2 − 47 VOLTS other industrial/consumer applications. Features • 1 2 Zener Breakdown Voltage: 6.2 − 47 V • DC Power Dissipation: 3.2 W with Tab 1 (Cathode) @ 75°C 1: CATHODE • Low Leakage < 5 (cid:2)A 2: ANODE • ESD Rating of Class 3 (> 16 kV) per Human Body Model • Low Profile − Maximum Height of 1.1 mm 1 • Integral Heat Sink/Locking Tabs • Full Metallic Bottom Eliminates Flux Entrapment 2 • Small Footprint − Footprint Area of 8.45 mm2 POWERMITE • Supplied in 12 mm Tape and Reel CASE 457 • Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes • POWERMITE is JEDEC Registered as DO−216AA • MARKING DIAGRAM Cathode Indicated by Polarity Band • These Devices are Pb−Free and are RoHS Compliant M Mechanical Characteristics 1 xxB (cid:2) 2 CATHODE ANODE CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are M = Date Code readily solderable xxB = Specific Device Code MOUNTING POSITION: Any (See Table on Page 2) MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: (cid:2) = Pb−Free Package 260°C for 10 Seconds ORDERING INFORMATION Device Package Shipping† 1PMT59xxBT1G POWERMITE 3000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: December, 2018 − Rev. 5 1PMT5920B/D

1PMT5920B Series MAXIMUM RATINGS Rating Symbol Value Unit DC Power Dissipation @ TA = 25°C (Note 1) °PD° 500 °mW Derate above 25°C 4.0 mW/°C Thermal Resistance, Junction−to−Ambient R(cid:3)JA 248 °C/W Thermal Resistance, Junction−to−Lead (Anode) R(cid:3)Janode 35 °C/W Maximum DC Power Dissipation (Note 2) °PD° 3.2 W Thermal Resistance from Junction−to−Tab (Cathode) R(cid:3)Jcathode 23 °C/W Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted with recommended minimum pad size, PC board FR−4. 2. At Tab (Cathode) temperature, Ttab = 75°C ELECTRICAL CHARACTERISTICS (TL = 25°C unless I otherwise noted, VF = 1.5 V Max. @ IF = 200 mAdc for all types) IF Symbol Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT VZ VR V IZK Reverse Current IIRZTVF ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current Zener Voltage Regulator VF Forward Voltage @ IF ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA) Zener Voltage (Note 3) ZZT @ IZT ZZK @ IZK Device VZ @ IZT (Volts) IZT IR @ VR VR (Note 4) (Note 4) IZK Device* Marking Min Nom Max (mA) ((cid:2)A) (V) ((cid:3)) ((cid:3)) (mA) 1PMT5920BT1G 20B 5.89 6.2 6.51 60.5 5.0 4.0 2.0 200 1.0 1PMT5921BT1G 21B 6.46 6.8 7.14 55.1 5.0 5.2 2.5 200 1.0 1PMT5924BT1G 24B 8.64 9.1 9.56 41.2 5.0 7.0 4.0 500 0.5 1PMT5927BT1G 27B 11.4 12 12.6 31.2 1.0 9.1 6.5 550 0.25 1PMT5929BT1G 29B 14.25 15 15.75 25 1.0 11.4 9.0 600 0.25 1PMT5933BT1G 33B 20.9 22 23.1 17 1.0 16.7 17.5 650 0.25 1PMT5934BT1G 34B 22.8 24 25.2 15.6 1.0 18.2 19 700 0.25 1PMT5935BT1G 35B 25.65 27 28.35 13.9 1.0 20.6 23 700 0.25 1PMT5941BT1G 41B 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C. 4. Zener Impedance Derivation ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz. www.onsemi.com 2

1PMT5920B Series TYPICAL CHARACTERISTICS W)3.5 100 N ( ATIO 3 mA) DISSIP2.5 RENT ( 10 R 2 R WE TL CU O1.5 R P E UM 1 ZEN 1 XIM I, Z A0.5 M P , D 025 50 75 100 125 150 175 0.15 6 7 8 9 10 11 T, TEMPERATURE (°C) VZ, ZENER VOLTAGE (VOLTS) Figure 1. Steady State Power Derating Figure 2. V to 10 Volts Z 100 °C)10 V/ 50 m A) 30 NT ( 8 VZ @ IZT m 20 E NT ( 10 FICI 6 E F R 5 E 4 R O U 3 C R C 2 RE 2 NE 1 TU I , ZEZ 00..53 MPERA−20 0.2 E T 0.1 , Z−4 0 10 20 30 40 50 60 70 80 90 100 V 2 4 6 8 10 12 (cid:3) VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS) Figure 4. Zener Voltage − To 12 Volts Figure 3. V = 12 thru 47 Volts Z C) ° 200 200 mV/ MS) IZ(dc) = 1mA NT ( VZ @ IZT OH100 CIE100 CE ( 7500 FI 70 N F A E D 30 O 50 E C P 20 E M UR 30 C I T MI 10 10 mA MPERA 20 DYNA 75 , TEZ 10 Z , Z 32 20 mA iZ(rms) = 0.1 IZ(dc) (cid:3)V 10 20 30 50 70 100 200 5 7 10 20 30 50 70 100 VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS) Figure 5. Zener Voltage − 14 To 47 Volts Figure 6. Effect of Zener Voltage www.onsemi.com 3

1PMT5920B Series TYPICAL CHARACTERISTICS 1 k MS) 500 TJ = 25°C OH iZ(rms) = 0.1 IZ(dc) E ( 200 C N 100 A D 50 E P M 20 C I MI 10 A N 5 22 V Y D Z , Z 2 12 V6.8 V 1 0.5 1 2 5 10 20 50 100 200 500 IZ, ZENER TEST CURRENT (mA) Figure 7. Effect of Zener Current 10,000 F) p E (1000 C N MEASURED @ 0 V BIAS A T CI PA MEASURED @ 50% VR A 100 C C, 10 1 10 100 VZ, REVERSE ZENER VOLTAGE (VOLTS) Figure 8. Capacitance versus Reverse Zener Voltage www.onsemi.com 4

1PMT5920B Series PACKAGE DIMENSIONS (cid:2) POWERMITE CASE 457−04 ISSUE F NOTES: −A− C F 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. J 0.08 (0.003) M T B S C S 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD S FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. MILLIMETERS INCHES PIN 1 DIM MIN MAX MIN MAX −B− A 1.75 2.05 0.069 0.081 B 1.75 2.18 0.069 0.086 K C 0.85 1.15 0.033 0.045 D 0.40 0.69 0.016 0.027 PIN 2 F 0.70 1.00 0.028 0.039 H -0.05 +0.10 -0.002 +0.004 J 0.10 0.25 0.004 0.010 R K 3.60 3.90 0.142 0.154 L L 0.50 0.80 0.020 0.031 R 1.20 1.50 0.047 0.059 S 0.50 REF 0.019 REF J H D 0.08 (0.003) M T B S C S −T− SOLDERING FOOTPRINT* 0.635 0.025 2.67 0.105 0.762 0.030 2.54 1.27 0.100 0.050 (cid:2) (cid:3) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada For additional information, please contact your local Email: orderlit@onsemi.com Sales Representative ◊ www.onsemi.com 1PMT5920B/D 5