1 N / F D June 2015 L L 9 1 4 / A 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 / B / Small Signal Diode 9 1 6 / A / B / Cathode Band 4 SOD-80 COLOR BAND MARKING 1 4 DEVICE 1ST BAND 8 / FDLL914 BLACK 4 SOD80 FDLL914A BLACK 4 FDLL914B BLACK 4 LL-34 F D L L4148 BLACK 8 DO-35 THE PLACEMENT OF THE EXPANSION GAP FDLL4448 BLACK — Cathode is denoted with a black band HAS NO RELATIONSHIP TO THE LOCATION -1st band denotes cathode terminal OF THE CATHODE TERMINAL and has wider width S m a l l S i Ordering Information g n a l Part Number Marking Package Packing Method D i 1N914 914 DO-204AH (DO-35) Bulk o d 1N914_T50A 914 DO-204AH (DO-35) Ammo e 1N914TR 914 DO-204AH (DO-35) Tape and Reel 1N914ATR 914A DO-204AH (DO-35) Tape and Reel 1N914B 914B DO-204AH (DO-35) Bulk 1N914BTR 914B DO-204AH (DO-35) Tape and Reel 1N916 916 DO-204AH (DO-35) Bulk 1N916A 916A DO-204AH (DO-35) Bulk 1N916B 916B DO-204AH (DO-35) Bulk 1N4148 4148 DO-204AH (DO-35) Bulk 1N4148TA 4148 DO-204AH (DO-35) Ammo 1N4148_T26A 4148 DO-204AH (DO-35) Ammo 1N4148_T50A 4148 DO-204AH (DO-35) Ammo 1N4148TR 4148 DO-204AH (DO-35) Tape and Reel 1N4148_T50R 4148 DO-204AH (DO-35) Tape and Reel 1N4448 4448 DO-204AH (DO-35) Bulk 1N4448TR 4448 DO-204AH (DO-35) Tape and Reel FDLL914 Black SOD-80 Tape and Reel FDLL914A Black SOD-80 Tape and Reel FDLL914B Black SOD-80 Tape and Reel FDLL4148 Black SOD-80 Tape and Reel FDLL4148_D87Z Black SOD-80 Tape and Reel FDLL4448 Black SOD-80 Tape and Reel FDLL4448_D87Z Black SOD-80 Tape and Reel © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8

1 N Absolute Maximum Ratings(1) /F D Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- L ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- L 9 tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The 1 absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. 4 A / A Symbol Parameter Value Unit /B VRRM Maximum Repetitive Reverse Voltage 100 V / 9 I Average Rectified Forward Current 200 mA 1 O 6 / I DC Forward Current 300 mA A F / B I Recurrent Peak Forward Current 400 mA f / Pulse Width = 1.0 s 1.0 A 4 I Non-repetitive Peak Forward Surge Current 1 FSM Pulse Width = 1.0 μs 4.0 A 4 8 TSTG Storage Temperature Range -65 to +200 °C / 4 T Operating Junction Temperature Range -55 to +175 °C 4 J 4 8 Note: — 1. These ratings are limiting values above which the serviceability of the diode may be impaired. S m a Thermal Characteristics ll S Max. ig Symbol Parameter Unit n 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 a l P Power Dissipation 500 mW D D i o RθJA Thermal Resistance, Junction-to-Ambient 300 °C/W d e Electrical Characteristics(2) Values are at T = 25°C unless otherwise noted. A Symbol Parameter Conditions Min. Max. Unit I = 100 μA 100 V R V Breakdown Voltage R I = 5.0 μA 75 V R 914B / 4448 I = 5.0 mA 0.62 0.72 V F 916B I = 5.0 mA 0.63 0.73 V F 914 / 916 / 4148 I = 10 mA 1.0 V F V Forward Voltage F 914A / 916A I = 20 mA 1.0 V F 916B I = 20 mA 1.0 V F 914B / 4448 I = 100 mA 1.0 V F V = 20 V 0.025 μA R I Reverse Leakage V = 20 V, T = 150°C 50 μA R R A V = 75 V 5.0 μA R 916/916A/916B/4448 V = 0, f = 1.0 MHz 2.0 pF R C Total Capacitance T 914/914A/914B/4148 V = 0, f = 1.0 MHz 4.0 pF R I = 10 mA, V = 6.0 V (600 mA) t Reverse Recovery Time F R 4.0 ns rr I = 1.0 mA, R = 100 Ω rr L Note: 2. Non-recurrent square wave P = 8.3 ms. W © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8 2

1 N Typical Performance Characteristics / F D L L 120 9 160 Ta=25 oC Ta= 25 oC 14 / 100 A Voltage, V [V] R111345000 Current, I [nA] R6800 /B / 916/A Reverse 120 Reverse 2400 /B / 4 1 4 1101 2 3 5 10 20 30 50 100 010 20 30 50 70 100 8 Reverse Voltage, V [V] Reverse Current, IR [uA] GENERAL RULE: The Reverse Current of a dioRde will approximately / 4 double for every ten (10) Degree C increase in Temperature 4 Figure 1. Reverse Voltage vs. Reverse Current Figure 2. Reverse Current vs. Reverse Voltage 4 8 BV - 1.0 to 100 μA IR - 10 to 100 V — S m 550 750 a Ta= 25 oC Ta= 25 oC ll S mV]500 mV]700 ig ward Voltage, V [ R344505000 ward Voltage, V [ F566505000 nal Diode For300 For500 250 450 1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10 Forward Current, I [uA] Forward Current, I [mA] F F Figure 3. Forward Voltage vs. Forward Current Figure 4. Forward Voltage vs. Forward Current V - 1 to 100 μA V - 0.1 to 10 mA F F 1.6 900 Ta= 25 oC Typical 800 mV]1.4 mV] Ta= -40 oC ge, V [ F1.2 ge, V [ F670000 Ta= 25 oC d Volta1.0 d Volta500 Ta= +65 oC war war400 or0.8 or F F 300 0.6 10 20 30 50 100 200 300 500 800 0.01 0.03 0.1 0.3 1 3 10 Forward Current, I [mA] F Forward Current, I [mA] F Figure 5. Forward Voltage vs. Forward Current Figure 6. Forward Voltage vs. Ambient Temperature V - 10 to 800 mA V - 0.01 - 20 mA (- 40 to +65°C) F F © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8 3

1 N Typical Performance Characteristics (Continued) /F D L L 9 0.90 4.0 1 e (pF)0.85 TA = 25 oC me, t [ns] rr33..05 Ta = 25 oC 4/A/B / Total Capacitanc0.80 verse Recovery Ti122...505 916/A/B / 4 Re 1 0.75 1.0 4 0 2 4 6 8 10 12 14 10 20 30 40 50 60 8 REVERSE VOLTAGE (V) Reverse Recovery Current, I [mA] / rr IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms 4 4 Figure 7. Total Capacitance Figure 8. Reverse Recovery Time vs. 4 Reverse Recovery Current 8 — S m 500 500 a l l 400 W]400 S m DO-35 and LL-34 / SOD-80 ig Current (mA)123000000 IF(AV) - AVERAGE RECTIFIED CURRENT - mA wer Dissipation, P [D123000000 nal Diode o P 0 0 0 50 100 150 0 50 100 150 200 Ambient Temperature ( oC) Temperature [ oC] Figure 9. Average Rectified Current (IF(AV)) Figure 10. Power Derating Curve vs. Ambient Temperature (T ) A © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8 4

1 N Physical Dimensions / F D L L 9 1 4 / A / B / 9 1 6 / A / B / 4 1 4 8 / 4 4 4 8 — S m a l l S i g n a l D i o d e Figure 11. AXIAL LEADED, GLASS, JEDEC DO204, VARIATION AH, DO-204AH (DO-35) © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8 5

1 N Physical Dimensions (Continued) /F D L L 9 1 4 / A / (cid:19)(cid:17)(cid:24)(cid:19) (cid:20)(cid:17)(cid:24)(cid:19) B (cid:19)(cid:17)(cid:22)(cid:19) (cid:21)(cid:17)(cid:25)(cid:23)(cid:3)(cid:53)(cid:40)(cid:41) (cid:20)(cid:17)(cid:22)(cid:19) / 9 1 6 / A / B (cid:20)(cid:17)(cid:23)(cid:19) (cid:3) (cid:20)(cid:17)(cid:21)(cid:19)(cid:3) / 4 1 4 8 / 4 (cid:19)(cid:17)(cid:22)(cid:19) 4 (cid:38) (cid:53)(cid:19)(cid:17)(cid:21)(cid:19) (cid:22)(cid:17)(cid:25)(cid:19) 4 8 (cid:22)(cid:17)(cid:22)(cid:19) — S (cid:3)(cid:22)(cid:17)(cid:22)(cid:19)(cid:3) m a l l S (cid:3)(cid:19)(cid:17)(cid:24)(cid:19)(cid:3) i g n (cid:3)(cid:20)(cid:17)(cid:25)(cid:24)(cid:3) a l D i o d e (cid:3)(cid:20)(cid:17)(cid:20)(cid:19)(cid:3) (cid:3)(cid:19)(cid:17)(cid:24)(cid:19)(cid:3) (cid:47)(cid:36)(cid:49)(cid:39)(cid:3)(cid:51)(cid:36)(cid:55)(cid:55)(cid:40)(cid:53)(cid:49)(cid:3)(cid:53)(cid:40)(cid:38)(cid:50)(cid:48)(cid:48)(cid:40)(cid:49)(cid:39)(cid:36)(cid:55)(cid:44)(cid:50)(cid:49) (cid:49)(cid:50)(cid:55)(cid:40)(cid:54)(cid:29)(cid:3)(cid:56)(cid:49)(cid:47)(cid:40)(cid:54)(cid:54)(cid:3)(cid:50)(cid:55)(cid:43)(cid:40)(cid:53)(cid:58)(cid:44)(cid:54)(cid:40)(cid:3)(cid:54)(cid:51)(cid:40)(cid:38)(cid:44)(cid:41)(cid:44)(cid:40)(cid:39) (cid:3)(cid:3)(cid:3)(cid:36)(cid:12)(cid:3)(cid:3)(cid:51)(cid:36)(cid:38)(cid:46)(cid:36)(cid:42)(cid:40)(cid:3)(cid:54)(cid:55)(cid:36)(cid:49)(cid:39)(cid:36)(cid:53)(cid:39)(cid:3)(cid:53)(cid:40)(cid:41)(cid:40)(cid:53)(cid:40)(cid:49)(cid:38)(cid:40)(cid:29)(cid:3)(cid:3) (cid:45)(cid:40)(cid:39)(cid:40)(cid:38)(cid:3)(cid:39)(cid:50)(cid:16)(cid:21)(cid:20)(cid:22)(cid:15)(cid:3)(cid:57)(cid:36)(cid:53)(cid:44)(cid:36)(cid:55)(cid:44)(cid:50)(cid:49)(cid:3)(cid:36)(cid:38)(cid:17) (cid:3)(cid:3)(cid:3)(cid:37)(cid:12)(cid:3)(cid:3)(cid:36)(cid:47)(cid:47)(cid:3)(cid:39)(cid:44)(cid:48)(cid:40)(cid:49)(cid:54)(cid:44)(cid:50)(cid:49)(cid:54)(cid:3)(cid:36)(cid:53)(cid:40)(cid:3)(cid:44)(cid:49)(cid:3)(cid:48)(cid:44)(cid:47)(cid:47)(cid:44)(cid:48)(cid:40)(cid:55)(cid:40)(cid:53)(cid:54)(cid:17) (cid:3)(cid:3) (cid:38) (cid:38)(cid:50)(cid:53)(cid:49)(cid:40)(cid:53)(cid:3)(cid:53)(cid:36)(cid:39)(cid:44)(cid:56)(cid:54)(cid:3)(cid:44)(cid:54)(cid:3)(cid:50)(cid:51)(cid:55)(cid:44)(cid:50)(cid:49)(cid:36)(cid:47)(cid:17) (cid:3)(cid:3)(cid:3)(cid:39)(cid:12)(cid:3)(cid:3)(cid:47)(cid:36)(cid:49)(cid:39)(cid:3)(cid:51)(cid:36)(cid:55)(cid:55)(cid:40)(cid:53)(cid:49)(cid:3)(cid:53)(cid:40)(cid:38)(cid:50)(cid:48)(cid:48)(cid:40)(cid:49)(cid:39)(cid:36)(cid:55)(cid:44)(cid:50)(cid:49)(cid:3)(cid:51)(cid:40)(cid:53)(cid:3)(cid:44)(cid:51)(cid:38)(cid:3)(cid:3)(cid:39)(cid:44)(cid:50)(cid:48)(cid:40)(cid:47)(cid:41)(cid:22)(cid:23)(cid:20)(cid:23)(cid:49) (cid:3)(cid:3)(cid:3)(cid:40)(cid:12)(cid:3)(cid:3)(cid:39)(cid:53)(cid:36)(cid:58)(cid:44)(cid:49)(cid:42)(cid:3)(cid:41)(cid:44)(cid:47)(cid:40)(cid:3)(cid:49)(cid:36)(cid:48)(cid:40)(cid:29)(cid:3)(cid:54)(cid:50)(cid:39)(cid:27)(cid:19)(cid:36)(cid:3)(cid:53)(cid:40)(cid:57)(cid:22) Figure 12. 2-TERMINAL, SOD-80, JEDEC DO-213AC, MINI-MELF © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8 6

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