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  • 型号: 1N914B
  • 制造商: Fairchild Semiconductor
  • 库位|库存: xxxx|xxxx
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1N914B产品简介:

ICGOO电子元器件商城为您提供1N914B由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 1N914B价格参考。Fairchild Semiconductor1N914B封装/规格:二极管 - 整流器 - 单, 标准 通孔 二极管 100V 200mA DO-35。您可以下载1N914B参考资料、Datasheet数据手册功能说明书,资料中有1N914B 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SMALL SIG 100V 0.2A DO35二极管 - 通用,功率,开关 100V Io/200mA BULK

产品分类

单二极管/整流器分离式半导体

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

RoHS 合规性豁免无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,二极管 - 通用,功率,开关,Fairchild Semiconductor 1N914B-

数据手册

点击此处下载产品Datasheet

产品型号

1N914B

PCN封装

点击此处下载产品Datasheet

不同If时的电压-正向(Vf)

1V @ 100mA

不同 Vr、F时的电容

4pF @ 0V,1MHz

不同 Vr时的电流-反向漏电流

5µA @ 75V

二极管类型

标准

产品

Switching Diodes

产品目录页面

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产品种类

二极管 - 通用,功率,开关

供应商器件封装

DO-35

包装

散装

单位重量

126 mg

反向恢复时间(trr)

4ns

商标

Fairchild Semiconductor

安装类型

通孔

安装风格

Through Hole

封装

Bulk

封装/外壳

DO-204AH,DO-35,轴向

封装/箱体

DO-35

峰值反向电压

100 V

工作温度-结

-65°C ~ 175°C

工厂包装数量

2000

恢复时间

4 ns

最大反向漏泄电流

5 uA

最大工作温度

+ 175 C

最大浪涌电流

4 A

最小工作温度

- 65 C

标准包装

2,000

正向电压下降

1 V at 0.1 A

正向连续电流

0.3 A

热阻

300°C/W Ja

电压-DC反向(Vr)(最大值)

100V

电流-平均整流(Io)

200mA

系列

1N914B

速度

小信号 =< 200mA(Io),任意速度

配置

Single

零件号别名

1N914B_NL

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PDF Datasheet 数据手册内容提取

1N4148 / 1N4448 / 1N914B Taiwan Semiconductor 500mW, High Speed Switching Diode FEATURES KEY PARAMETERS ● Low power loss, high efficiency PARAMETER VALUE UNIT ● Ideal for automated placement I 150 mA F ● High surge current capability V 100 V ● Compliant to RoHS directive 2011/65/EU and RRM in accordance to WEEE 2002/96/EC I 2 A FSM ● Halogen-free according to IEC 61249-2-21 V at I =100mA 1 V F F APPLICATIONS TJ MAX 150 °C ● Switching mode power supply (SMPS) Package DO-35 Configuration Singal die MECHANICAL DATA ● Case: DO-35 ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Polarity: Indicated by cathode band ● Weight: 125 ± 4 mg ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted) A PARAMETER SYMBOL 1N4148 1N4448 1N914B UNIT Power dissipation P 500 mW D Repetitive peak reverse voltage V 100 V RRM Non-Repetitive peak forward surge current I 2 A Pluse width = 1μs, Square wave FSM Non-Repetitive peak forward current I 450 mA FM Forward current I 150 mA F Junction temperature range T -65 to +150 °C J Storage temperature range T -65 to +150 °C STG THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 240 °C/W ӨJA 1 Version:J1804

1N4148 / 1N4448 / 1N914B Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25°C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 5 mA, 1N4448,1N914B F 0.62 0.72 T = 25°C J Forward voltage I = 10 mA, 1N4148 F V - 1.00 V per diode (1) T = 25°C F J I = 100 mA, 1N4448,1N914B F - 1.00 T = 25°C J I = 100 μA, T = 25°C 100 - Reverse voltage R J V V (2) R I = 5 μA, T = 25°C 75 - R J V = 20 V, T = 25°C - 25 nA Reverse current R J I (2) R V = 75 V, T = 25°C - 5 μA R J Junction 1 MHz, V =0V C - 4 pF R J capacitance Reverse I = 10mA , V =6V, R = 100Ω , F R L t - 4 ns rr recovery time I = 1mA RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PACKAGE PACKING 1N4148 R0G DO-35 10K / 14" Reel 1N4148 R0 DO-35 10K / 14" Reel 1N4148 A0G DO-35 5K / Box(Ammo) 1N4148 A0 DO-35 5K / Box(Ammo) 1N4448 R0G DO-35 10K / 14" Reel 1N4448 R0 DO-35 10K / 14" Reel 1N4448 A0G DO-35 5K / Box(Ammo) 1N4448 A0 DO-35 5K / Box(Ammo) 1N914B R0G DO-35 10K / 14" Reel 1N914B R0 DO-35 10K / 14" Reel 1N914B A0G DO-35 5K / Box(Ammo) 1N914B A0 DO-35 5K / Box(Ammo) 2 Version:J1804

1N4148 / 1N4448 / 1N914B Taiwan Semiconductor CHARACTERISTICS CURVES (T = 25°C unless otherwise noted) A Fig.1 Typical Forward Characteristics Fig. 2 Reverse Current VS. Reverse Voltage 1 10000 100°C nt (A) 0.1 TA=25°C nA) 1000 70°C Curre nt :l (R d e 100 war Curr 50°C or e F 0.01 s er Rev 10 TA=25°C 0.001 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 80 100 120 Forward Voltage (V) Reverse Voltage : VR (V) Fig.3 Admissible Power Dissipation Curve Fig.4 Typical Junction Capacitance 500 1.5 W) 400 pF) 1.2 f=1.0 MHz m e ( n ( nc o 300 a 0.9 ati cit p a wer Dissi 200 ction Cap 0.6 o n P u J 100 0.3 0 0 0 25 50 75 100 125 150 175 200 0 5 10 15 20 25 30 Ambient Temperature (oC) Reverse Voltage (V) 3 Version:J1804

1N4148 / 1N4448 / 1N914B Taiwan Semiconductor PACKAGE OUTLINE DIMENSION DO-35 Unit (mm) Unit (inch) DIM. Min Max Min Max A 0.34 0.60 0.013 0.024 B 2.90 5.08 0.114 0.200 C 25.40 38.10 1.000 1.500 D 1.30 2.28 0.051 0.090 MARKING DIAGRAM 4 Version:J1804

1N4148 / 1N4448 / 1N914B Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version:J1804

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: T aiwan Semiconductor: 1N914B 1N4148 1N4448 1N4148 R0 1N4148 A0 1N4448 A0 1N914B R0 1N4448 R0 1N4148 R0G 1N4148 A0G 1N4448 R0G 1N4448 A0G 1N914B R0 G