1N746 thru 1N759A, -1, e3 and 1N4370 thru 1N4372A, -1, e3 DO-35 Silicon 500 mW Zener Diodes SCOTTSDALE DIVISION DESCRIPTION APPEARANCE W The popular 1N746 thru 1N759A and 1N4370 thru 1N4372A series of 0.5 DO-35 W W watt Zener Voltage Regulators provides a selection from 2.4 to 12 volts in (DO-204AH) . standard 5% or 10% tolerances as well as tighter tolerances identified by M different suffix letters on the part number. These glass axial-leaded DO-35 ic r Zeners are also available with an internal-metallurgical-bond option by o s adding a “-1” suffix as well as RoHS Compliant by adding an “e3” suffix. e Microsemi also offers numerous other Zener products to meet higher and m lower power applications. i .C IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com O M FEATURES APPLICATIONS / BENEFITS • JEDEC registered 1N746 thru 1N759A and 1N4370 • Regulates voltage over a broad operating thru 1N4372A series current and temperature range • Internal metallurgical bond option available by adding a • Selection from 2.4 to 12 V “-1” suffix similar to military devices • Standard voltage tolerances are plus/minus 5% • Commercial Surface Mount equivalents available as with A suffix identification and 10 % with no suffix MLL746 to MLL759A and MLL4370 to MLL4372A • Tight tolerances available in plus or minus 2% including the “-1” suffix in the DO-213AA MELF style package (consult factory for others) or 1% with C or D suffix respectively • RoHS Compliant devices available by adding “e3” suffix • Flexible axial-lead mounting terminals • DO-7 glass body axial-leaded Zener equivalents are • Nonsensitive to ESD per MIL-STD-750 Method also available 1020 • Minimal capacitance (see Figure 3) • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • Operating and Storage temperature: -65ºC to +175ºC • CASE: Hermetically sealed axial-lead glass • Thermal Resistance: 250 ºC/W junction to lead at 3/8 DO-35 (DO-204AH) package (10 mm) lead length from body, or 310ºC/W junction to • TERMINALS: Tin-Lead or RoHS Compliant ambient when mounted on FR4 PC board (1 oz Cu) annealed matte-Tin plating solderable per MIL- with 4 mm2 copper pads and track width 1 mm, length STD-750, method 2026 25 mm • POLARITY: Cathode indicated by band. Diode to • Steady-State Power: 0.5 watts at T < 50oC 3/8 inch be operated with the banded end positive with L (10 mm) from body or 0.48 W at T < 25ºC when respect to the opposite end for Zener regulation A mounted on FR4 PC board as described for thermal • MARKING: Part number resistance above (also see Figure1) 1 • TAPE & REEL option: Standard per EIA-296 (add N • Forward voltage @200 mA: 1.1 volts “TR” suffix to part number) 4 • Solder Temperatures: 260 ºC for 10 s (max) • WEIGHT: 0.2 grams 371 0N • See package dimensions on last page - 7 4346 72 - A7 5 , 9 e A 3 (D, e 3 O - 3 5 ) Copyright © 2005 Microsemi Page 1 10-18-2005 REV C Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N746 thru 1N759A, -1, e3 and 1N4370 thru 1N4372A, -1, e3 DO-35 Silicon 500 mW Zener Diodes SCOTTSDALE DIVISION ELECTRICAL CHARACTERISTICS* @ 25oC W W NOMINAL ZENER MAXIMUM MAXIMUM REVERSE MAXIMUM TYPICAL W JEDEC ZENER TEST ZENER CURRENT IR ZENER TEMP COEFF. . TYPE NO. VOLTAGE CURRENT IMPEDANCE @ V = 1 VOLT CURRENT OF ZENER M R VZ @ IZT IZT ZZT @ IZT IZM VOLTAGE ic (NOTE1) (NOTE 2) (NOTE 3) @25ºC @+150ºC (NOTE 4) αVZ ro VOLTS mA OHMS μA μA mA %/oC s 1N4370 2.4 20 30 100 200 150 -.085 e m 1N4371 2.7 20 30 75 150 135 -.080 1N4372 3.0 20 29 50 100 120 -.075 i . C 1N746 3.3 20 28 10 30 110 -.066 O 1N747 3.6 20 24 10 30 100 -.058 M 1N748 3.9 20 23 10 30 95 -.046 1N749 4.3 20 22 2 30 85 -.033 1N750 4.7 20 19 2 30 75 -.015 1N751 5.1 20 17 1 20 70 +/-.010 1N752 5.6 20 11 1 20 65 +.030 1N753 6.2 20 7 .1 20 60 +.049 1N754 6.8 20 5 .1 20 55 +.053 1N755 7.5 20 6 .1 20 50 +.057 1N756 8.2 20 8 .1 20 45 +.060 1N757 9.1 20 10 .1 20 40 +.061 1N758 10.0 20 17 .1 20 35 +.062 1N759 12.0 20 30 .1 20 30 +.062 * JEDEC Registered Data NOTE 1: Standard tolerance on JEDEC types shown is +/- 10%. Suffix letter A denotes +/- 5% tolerance; suffix letter C denotes +/- 2%; and suffix letter D denotes +/- 1% tolerance. NOTE 2: Voltage measurements to be performed 20 seconds after application of dc test current. NOTE 3: Zener impedance derived by superimposing on IZT, a 60 cps, rms ac current equal to 10% IZT (2mA ac). See MicroNote 202 for typical zener Impedance variation with different operating currents. NOTE 4: Allowance has been made for the increase in VZ due to ZZ and for the increase in junction temperature as the unit approaches thermal equilibrium at the power dissipation of 400 mW. GRAPHS T W EM m T P TION - FICIEN ERATU A F R SSIP COE E CO 1N DI E E 4 OWER RATUR FFICIE 370- 1N7 P E N 44 RATED TEMP T mV/Co 372A6 - 75 , 9 e A 3 TL – LEAD T E MTPA EoRn AFTRU4R PEC ( BoCO) A3R/8D” FROM BODY or NOMINAL ZENER VOLTAGE (VOLTS) (D, e3 FIGURE 1 FIGURE 2 O - POWER DERATING CURVE ZENER VOLTAGE TEMPERATURE 3 5 COEFFICIENT vs. ZENER VOLTAGE ) Copyright © 2005 Microsemi Page 2 10-18-2005 REV C Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N746 thru 1N759A, -1, e3 and 1N4370 thru 1N4372A, -1, e3 DO-35 Silicon 500 mW Zener Diodes SCOTTSDALE DIVISION PACKAGE DIMENSIONS W W W . M ic r o s e m i . C O M All dimensions in: INCH mm FIGURE 3 CAPACITANCE vs. ZENER VOLTAGE (TYPICAL) 1 N 4 3 71 0N - 7 44 36 7 2- A7 5 , 9 e A 3 (D, e 3 O - 3 5 ) Copyright © 2005 Microsemi Page 3 10-18-2005 REV C Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503