1N5913B Series (cid:2) 3 W DO−41 Surmetic 30 Zener Voltage Regulators This is a complete series of 3 W Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial−lead, transfer−molded plastic package that offers protection in all common http://onsemi.com environmental conditions. Features Cathode Anode • Zener Voltage Range − 3.3 V to 200 V • ESD Rating of Class 3 (>16 KV) per Human Body Model • Surge Rating of 98 W @ 1 ms • Maximum Limits Guaranteed on up to Six Electrical Parameters • Package No Larger than the Conventional 1 W Package AXIAL LEAD • CASE 59 Pb−Free Packages are Available PLASTIC STYLE 1 Mechanical Characteristics CASE: Void free, transfer−molded, thermosetting plastic MARKING DIAGRAM FINISH: All external surfaces are corrosion resistant and leads are readily solderable A MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 1N 59xxB 260°C, 1/16″ from the case for 10 seconds YYWW(cid:2) POLARITY: Cathode indicated by polarity band (cid:2) MOUNTING POSITION: Any A = Assembly Location 1N59xxB = Device Number MAXIMUM RATINGS YY = Year WW = Work Week Rating Symbol Value Unit (cid:2) = Pb−Free Package Max. Steady State Power Dissipation PD 3 W (Note: Microdot may be in either location) @ TL = 75°C, Lead Length = 3/8″ Derate above 75°C 24 mW/°C ORDERING INFORMATION Ste@a dTyA S=t a5t0e° CPower Dissipation PD 1 W Device Package Shipping† Derate above 50°C 6.67 mW/°C 1N59xxB, G Axial Lead 2000 Units/Box Operating and Storage TJ, Tstg −65 to °C (Pb−Free) Temperature Range +200 1N59xxBRL, G Axial Lead 6000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. (Pb−Free) Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are †For information on tape and reel specifications, exceeded, device functional operation is not implied, damage may occur and including part orientation and tape sizes, please reliability may be affected. refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: April, 2006 − Rev. 5 1N5913B/D

1N5913B Series ELECTRICAL CHARACTERISTICS I (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types) IF Symbol Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT VZVR V IR VF IZK Reverse Current IZT ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Breakdown Voltage IF Forward Current VF Forward Voltage @ IF Zener Voltage Regulator IZM Maximum DC Zener Current http://onsemi.com 2

1N5913B Series ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types) Zener Voltage (Note 2) Zener Impedance (Note 3) Leakage Current Device† Device VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR IZM (Note 1) Marking Min Nom Max mA (cid:2) (cid:2) mA (cid:2)A Max Volts mA 1N5913B, G 1N5913B 3.14 3.3 3.47 113.6 10 500 1 100 1 454 1N5917B, G 1N5917B 4.47 4.7 4.94 79.8 5 500 1 5 1.5 319 1N5919B, G 1N5919B 5.32 5.6 5.88 66.9 2 250 1 5 3 267 1N5920B, G 1N5920B 5.89 6.2 6.51 60.5 2 200 1 5 4 241 1N5921B, G 1N5921B 6.46 6.8 7.14 55.1 2.5 200 1 5 5.2 220 1N5923B, G 1N5923B 7.79 8.2 8.61 45.7 3.5 400 0.5 5 6.5 182 1N5924B, G 1N5924B 8.65 9.1 9.56 41.2 4 500 0.5 5 7 164 1N5925B, G 1N5925B 9.50 10 10.50 37.5 4.5 500 0.25 5 8 150 1N5926B, G 1N5926B 10.45 11 11.55 34.1 5.5 550 0.25 1 8.4 136 1N5927B, G 1N5927B 11.40 12 12.60 31.2 6.5 550 0.25 1 9.1 125 1N5929B, G 1N5929B 14.25 15 15.75 25.0 9 600 0.25 1 11.4 100 1N5930B, G 1N5930B 15.20 16 16.80 23.4 10 600 0.25 1 12.2 93 1N5931B, G 1N5931B 17.10 18 18.90 20.8 12 650 0.25 1 13.7 83 1N5932B, G 1N5932B 19.00 20 21.00 18.7 14 650 0.25 1 15.2 75 1N5933B, G 1N5933B 20.90 22 23.10 17.0 17.5 650 0.25 1 16.7 68 1N5934B, G 1N5934B 22.80 24 25.20 15.6 19 700 0.25 1 18.2 62 1N5935B, G 1N5935B 25.65 27 28.35 13.9 23 700 0.25 1 20.6 55 1N5936B, G 1N5936B 28.50 30 31.50 12.5 28 750 0.25 1 22.8 50 1N5937B, G 1N5937B 31.35 33 34.65 11.4 33 800 0.25 1 25.1 45 1N5938B, G 1N5938B 34.20 36 37.80 10.4 38 850 0.25 1 27.4 41 1N5940B, G 1N5940B 40.85 43 45.15 8.7 53 950 0.25 1 32.7 34 1N5941B, G 1N5941B 44.65 47 49.35 8.0 67 1000 0.25 1 35.8 31 1N5942B, G 1N5942B 48.45 51 53.55 7.3 70 1100 0.25 1 38.8 29 1N5943B, G 1N5943B 53.20 56 58.80 6.7 86 1300 0.25 1 42.6 26 1N5944B, G 1N5944B 58.90 62 65.10 6.0 100 1500 0.25 1 47.1 24 1N5946B, G 1N5946B 71.25 75 78.75 5.0 140 2000 0.25 1 56 20 1N5947B, G 1N5947B 77.90 82 86.10 4.6 160 2500 0.25 1 62.2 18 1N5948B, G 1N5948B 86.45 91 95.55 4.1 200 3000 0.25 1 69.2 16 1N5950B, G 1N5950B 104.5 110 115.5 3.4 300 4000 0.25 1 83.6 13 1N5951B, G 1N5951B 114 120 126 3.1 380 4500 0.25 1 91.2 12 1N5952B, G 1N5952B 123.5 130 136.5 2.9 450 5000 0.25 1 98.8 11 1N5953B, G 1N5953B 142.5 150 157.5 2.5 600 6000 0.25 1 114 10 1N5954B, G 1N5954B 152 160 168 2.3 700 6500 0.25 1 121.6 9 1N5955B, G 1N5955B 171 180 189 2.1 900 7000 0.25 1 136.8 8 1N5956B, G 1N5956B 190 200 210 1.9 1200 8000 0.25 1 152 7 Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. †The “G’’ suffix indicates Pb−Free package available. 1. TOLERANCE AND TYPE NUMBER DESIGNATION Tolerance designation − device tolerance of ±5% are indicated by a “B” suffix. 2. ZENER VOLTAGE (VZ) MEASUREMENT ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C, 3/8″ from the diode body. 3. ZENER IMPEDANCE (ZZ) DERIVATION The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK. http://onsemi.com 3

1N5913B Series S) 5 T L = LEAD LENGTH T A L = 1/8″ TO HEAT SINK W N ( 4 O TI L = 3/8″ A 3 P SI S DI TE 2 L = 1″ A T S Y 1 D A E T S 0 , D 0 20 40 60 80 100 120 140 160 180 200 P TL, LEAD TEMPERATURE (°C) Figure 1. Power Temperature Derating Curve 30 E C N 20 A D =0.5 T SW) ESIC/10 L RD ( ° 7 0.2 MAEA 5 ENT THERTION-TO-L 23 00.0.15 PPK t1t2 θ(t, D) TRANSIJL JUNC000...3571 D00 ..=0012 0 N O T E : RTBEOES LAPONOWYN L0SE.E1A CSDUE LCREOVNENG DITS,H TA H(PLEP).RLIMCAALB LE SRIENPGELTEIT PIVUEL SPEU L(cid:3)DSTUEJTSLY =(cid:3) C(cid:4)TYJJLCL (L=t)E P(cid:4), PJDLK (=t,tD1/)t2PPK 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 t, TIME (SECONDS) Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch 1K 3 E 2 WATTS) 500 RNWEOACNVTERAFENOPGREUTMILTAIVRE c) @ VRR. TABL 0.51 TA = 125°C R ( 300 TJ(cid:2)=(cid:2)25°C PRIOR AdHA 0.2 P , PEAK SURGE POWEPK122350000000 TO INITIAL PULSE I, REVERSE LEAKAGE (μRAS SPECIFIED IN ELEC. C0.0000...0000000...00000000.51251251 TA = 125°C 0.0003 10 1 2 5 10 20 50 100 200 400 1000 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 NOMINAL V (VOLTS) PW, PULSE WIDTH (ms) Z Figure 3. Maximum Surge Power Figure 4. Typical Reverse Leakage http://onsemi.com 4

1N5913B Series APPLICATION NOTE Since the actual voltage available from a given zener (cid:3)T is the increase in junction temperature above the lead JL diode is temperature dependent, it is necessary to determine temperature and may be found from Figure 2 for a train of junction temperature under any set of operating conditions power pulses (L = 3/8 inch) or from Figure 10 for dc power. in order to calculate its value. The following procedure is (cid:3)T = (cid:4) P JL JL D recommended: For worst-case design, using expected limits of I , limits Z Lead Temperature, T , should be determined from: L of P and the extremes of T ((cid:3)T ) may be estimated. D J J TL = (cid:4)LA PD + TA Changes in voltage, VZ, can then be found from: (cid:4)LA is the lead-to-ambient thermal resistance (°C/W) and (cid:3)V = (cid:4) (cid:3)T VZ J P is the power dissipation. The value for (cid:4) will vary and deDpends on the device mounting method. (cid:4)LA is generally (cid:4)VZ, the zener voltage temperature coefficient, is found LA 30−40°C/W for the various clips and tie points in common from Figures 5 and 6. Under high power-pulse operation, the zener voltage will use and for printed circuit board wiring. vary with time and may also be affected significantly by the The temperature of the lead can also be measured using a zener resistance. For best regulation, keep current thermocouple placed on the lead as close as possible to the excursions as low as possible. tie point. The thermal mass connected to the tie point is Data of Figure 2 should not be used to compute surge normally large enough so that it will not significantly capability. Surge limitations are given in Figure 3. They are respond to heat surges generated in the diode as a result of lower than would be expected by considering only junction pulsed operation once steady-state conditions are achieved. temperature, as current crowding effects cause temperatures Using the measured value of T , the junction temperature L to be extremely high in small spots resulting in device may be determined by: degradation should the limits of Figure 3 be exceeded. T = T + (cid:3)T J L JL http://onsemi.com 5

1N5913B Series TEMPERATURE COEFFICIENT RANGES (90% of the Units are in the Ranges Indicated) T mV/ C) @ I°Z 108 V/ C) @ I°ZT1050000 NT ( 6 T (m E N 200 FFICI 4 FICIE E F 100 O E C 2 RANGE O RE E C 50 U R T 0 U A T R A E R MP −2 PE 20 E M T E , VZ −4 , TZ 10 θ 3 4 5 6 7 8 9 10 11 12 V 10 20 50 100 200 400 1000 θ VZ, ZENER VOLTAGE @ IZT (VOLTS) VZ, ZENER VOLTAGE @ IZT (VOLTS) Figure 5. Units To 12 Volts Figure 6. Units 10 To 400 Volts ZENER VOLTAGE versus ZENER CURRENT (Figures 7, 8 and 9) 100 100 50 50 30 30 A) 20 A) 20 m m T ( 10 T ( 10 N N RE 5 RE 5 R R CU 3 CU 3 R 2 R 2 E E EN 1 EN 1 Z Z I , Z 0.5 I , Z 0.5 0.3 0.3 0.2 0.2 0.1 0.1 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS) Figure 7. V = 3.3 thru 10 Volts Figure 8. V = 12 thru 82 Volts Z Z W) 10 C/ 80 ( ° CE 70 5 N A A) ST 60 m SI ENT ( 2 L RE 50 R A CUR 1 ERM 40 L L I , ZENER Z 0.5 TO-LEAD TH 2300 PRIMARYT PLATH OF 0.2 ON- 10 CONDUCTION IS THROUGH TI THE CATHODE LEAD C 0.1 N 0 100 150 200 250 300 350 400 JU 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1 VZ, ZENER VOLTAGE (VOLTS) θ, JL L, LEAD LENGTH TO HEAT SINK (INCH) Figure 9. V = 100 thru 400 Volts Figure 10. Typical Thermal Resistance Z http://onsemi.com 6

1N5913B Series PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K D 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. F 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. A INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.161 0.205 4.10 5.20 OPPOTLIOANRAITLY A INSD NICEEADTOEDR F B 0.079 0.106 2.00 2.70 (SEE STYLES) D 0.028 0.034 0.71 0.86 F −−− 0.050 −−− 1.27 K K 1.000 −−− 25.40 −−− STYLE 1: PIN 1.CATHODE (POLARITY BAND) 2.ANODE http://onsemi.com 7

1N5913B Series SURMETIC is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative. http://onsemi.com 1N5913B/D 8