1N5820, 1N5821, 1N5822 www.vishay.com Vishay General Semiconductor Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation DO-201AD • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in low voltage high frequency inverters, I 3.0 A freewheeling, DC/DC converters, and polarity protection F(AV) applications. V 20 V, 30 V, 40 V RRM I 80 A FSM MECHANICAL DATA V 0.475 V, 0.500 V, 0.525 V F Case: DO-201AD T max. 125 °C J Molding compound meets UL 94 V-0 flammability rating Package DO-201AD Base P/N-E3 - RoHS-compliant, commercial grade Diode variations Single Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL 1N5820 1N5821 1N5822 UNIT Maximum repetitive peak reverse voltage V 20 30 40 V RRM Maximum RMS voltage V 14 21 28 V RMS Maximum DC blocking voltage V 20 30 40 V DC Non-repetitive peak reverse voltage V 24 36 48 V RSM Maximum average forward rectified current I 3.0 A at 0.375" (9.5 mm) lead length at T = 95 °C F(AV) L Peak forward surge current, 8.3 ms single half sine-wave I 80 A superimposed on rated load FSM Operating junction and storage temperature range T , T - 65 to + 125 °C J STG ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL 1N5820 1N5821 1N5822 UNIT Maximum instantaneous forward voltage 3.0 V (1) 0.475 0.500 0.525 V F Maximum instantaneous forward voltage 9.4 V (1) 0.850 0.900 0.950 V F Maximum average reverse current TA = 25 °C I (1) 2.0 mA at rated DC blocking voltage T = 100 °C R 20 A Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Revision: 13-Aug-13 1 Document Number: 88526 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1N5820, 1N5821, 1N5822 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL 1N5820 1N5821 1N5822 UNIT R (1) 40 JA Typical thermal resistance °C/W R (1) 10 JL Note (1) Thermal resistance from junction to lead vertical PCB mounted, 0.500" (12.7 mm) lead length with 2.5" x 2.5" (63.5 mm x 63.5 mm) copper pad ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1N5820-E3/54 1.08 54 1400 13" diameter paper tape and reel 1N5820-E3/73 1.08 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 4.0 100 T = 125 °C J Resistive or Inductive Load A) )A 0.375" (9.5 mm) Lead Length nt ( t (ne 3.0 urre 10 Pulse Width = 300 μs rurCd ward C 1 % Duty Cycle rwaro 2.0 s For 1 F u e agrveA 1.0 stantaneo 0.1 TJ = 25 °C n I 0 0.01 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Lead Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 80 10 A) A) 70 TJ = TJ Max. m TJ = 125 °C Current ( 60 8.3 ms Single Half Sine-Wave Current ( 1 d Surge 4500 Reverse 0.1 TJ = 75 °C ar s w u or 30 eo ak F ntan 0.01 TJ = 25 °C Pe 20 sta n I 10 0.001 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics Revision: 13-Aug-13 2 Document Number: 88526 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1N5820, 1N5821, 1N5822 www.vishay.com Vishay General Semiconductor 1000 100 TJ = 25 °C )W )Fp fV =sig 1 =.0 5 M0 HmzVp-p /C°( e ( e cn c a 10 n d a e tic pm apa 100 I la C m noitcnuJ rehT tneis 1 n a rT 10 0.1 0.1 1 10 100 0 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Revision: 13-Aug-13 3 Document Number: 88526 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: 1N5820-E3/23 1N5820-E3/4 1N5821-E3/4 1N5822-E3/1 1N5822-E3/4 VS-1N5820TR 1N5820-E3/51 1N5820- E3/73 1N5821-E3/51 1N5822-E3/51 1N5822-E3/73 VS-1N5820