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  • 型号: 1N5355B/TR12
  • 制造商: American Microsemiconductor, Inc.
  • 库位|库存: xxxx|xxxx
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1N5355B/TR12产品简介:

ICGOO电子元器件商城为您提供1N5355B/TR12由American Microsemiconductor, Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 1N5355B/TR12价格参考¥14.98-¥16.08。American Microsemiconductor, Inc.1N5355B/TR12封装/规格:二极管 - 齐纳 - 单, Zener Diode 18V 5W ±5% Through Hole T-18。您可以下载1N5355B/TR12参考资料、Datasheet数据手册功能说明书,资料中有1N5355B/TR12 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE ZENER 18V 5W T-18

产品分类

单二极管/齐纳

品牌

Microsemi Commercial Components Group

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

1N5355B/TR12

rohs

含铅 / 不符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同If时的电压-正向(Vf)

1.2V @ 1A

不同 Vr时的电流-反向漏电流

500nA @ 13V

供应商器件封装

T-18

其它名称

1N5355BMSCT
1N5355BMSCT-ND

功率-最大值

5W

包装

剪切带 (CT)

安装类型

通孔

容差

±5%

封装/外壳

T-18,轴向

工作温度

-65°C ~ 150°C

标准包装

1

电压-齐纳(标称值)(Vz)

18V

阻抗(最大值)(Zzt)

2.5 欧姆

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PDF Datasheet 数据手册内容提取

1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION DESCRIPTION APPEARANCE W The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt W T-18 W Zeners provides voltage regulation in a selection from 3.3 to 200 volts with . different tolerances as identified by specific suffix letter on the part number. M These plastic encapsulated Zeners have moisture classification of Level 1 ic r with no dry pack required and are also available in various military o s equivalent screening levels by adding a prefix identifier as also described in e the Features section. They may be operated at high maximum dc currents m with adequate heat sinking with their comparatively low thermal resistance i . design. Microsemi also offers numerous other Zener products to meet C O higher and lower power applications. M IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • JEDEC registered 1N5333 to 1N5388B • Regulates voltage over a broad operating current and • Zener voltage available 3.3V to 200V temperature range • Standard voltage tolerances are plus/minus 5% with B • Wide selection from 3.3 to 200 V suffix and 10 % with A suffix identification • Flexible axial-lead mounting terminals • Tight tolerances available in plus or minus 2% or 1% • Nonsensitive to ESD per MIL-STD-750 Method 1020 with C or D suffix respectively • Withstands high surge stresses • Options for screening in accordance with MIL-PRF- • Minimal changes of voltage versus current as 19500 for JAN, JANTX, and JANTXV are available specified by voltage regulation (ΔV ) Z by adding MQ, MX, or MV prefixes respectively to • High specified maximum current (I ) when part numbers. ZM adequately heat sunk • Surface mount equivalents available as SMBJ5333 to • Moisture classification is Level 1 per IPC/JEDEC J- SMBJ5388B, or SMBG5333B to SMBG5388B STD-020B with no dry pack required • RoHS Compliant devices available by adding e3 suffix MAXIMUM RATINGS MECHANICAL AND PACKAGING • Power dissipation at 25ºC: 5.0 watts (also see • CASE: Void-free transfer molded thermosetting derating in Figure 1). epoxy body meeting UL94V-0 • Operating and Storage temperature: -65ºC to • TERMINALS: Leads, Tin-Lead or RoHS Compliant +150ºC annealed matte-Tin plating solderable per MIL-STD- • Thermal Resistance: 25 ºC/W junction to lead at 3/8 750, method 2026 (10 mm) lead length from body, or 85ºC/W junction • POLARITY: Cathode indicated by band. Diode to 1 to ambient when mounted on FR4 PC board (1oz be operated with the banded end positive with N Cu) with 4 mm2 copper pads and track width 1 respect to the opposite end. 53 mm, length 25 mm • MARKING: Part number 33 • S(t1e0a dmym-S)t afrtoem P boowdeyr,: o 5r w1.a4t7ts w aat tTtsL a<t 2T5Ao =C 235/8ºC i nch • “TTARP” Esu &ff iRx EtoE pLa ortp ntiounm: b Sert)a n dard per EIA-296 (add B thr when mounted on FR4 PC described for thermal u • WEIGHT: 0.7 grams 1 resistance (also see Figure 1) N • See package dimensions on last page 5 • Forward voltage @1.0 A: 1.2 volts (maximum) 3 • Solder Temperatures: 260 ºC for 10 s (max) 88 B , e 3 Copyright © 2008 Microsemi Page 1 8-06-2008 REV D Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION *ELECTRICAL CHARACTERISTICS @ 25oC W MAXIMUM W REGULATOR TEST MDYANXIAMMUIMC MAXIMUM VIOR LTTEASGTE IR TEST RMEGAUXLIMAUTMOR DYNMAAMXIIMC UKMN EE MAXIMUM VOLTAGE W REVERSE VOLTAGE SURGE REGULATION TYPE VOLTAGE CURRENT IMPEDANCE CURRENT (VR) (V ) CURRENT IMPEDANCE CURRENT (ΔV ) . NUMBER (VZ) (IZT) (A&B(Z SZu) ff ix) (IR) (NoAn S-Suufffifxix) & (B,C,D SRuffix) (B,C(,DIZ MSu) ffix) (ZA,ZBK, C@,D 1 S.0u mffiAx) (IZSM) (AS,uBf,fCiZx,)D Mic V mA dc OHMS μA V V mA OHMS AMPS VOLTS ro 1N5333B 3.3 380 3.0 300 1.0 1.0 1440 400 20 0.85 s 1N5334B 3.6 350 2.5 150 1.0 1.0 1320 500 18.7 0.80 e 1N5335B 3.9 320 2.0 50 1.0 1.0 1220 500 17.6 0.54 m 1N5336B 4.3 290 2.0 10 1.0 1.0 1100 500 16.4 0.49 1N5337B 4.7 260 2.0 5.0 1.0 1.0 1010 450 15.3 0.44 i . 1N5338B 5.1 240 1.5 1.0 1.0 1.0 930 400 14.4 0.39 C 1N5339B 5.6 220 1.0 1.0 2.0 2.0 865 400 13.4 0.25 O 1N5340B 6.0 200 1.0 1.0 3.0 3.0 790 300 12.7 0.19 M 1N5341B 6.2 200 1.0 1.0 3.0 3.0 765 200 12.4 0.10 1N5342B 6.8 175 1.0 10 4.9 5.2 700 200 11.5 0.15 1N5343B 7.5 175 1.5 10 5.4 5.7 630 200 10.7 0.15 1N5344B 8.2 150 1.5 10 5.9 6.2 580 200 10 0.20 1N5345B 8.7 150 2.0 10 6.25 6.6 545 200 9.5 0.20 1N5346B 9.1 150 2.0 7.5 6.6 6.9 520 150 9.2 0.22 1N5347B 10 125 2.0 5.0 7.2 7.6 475 125 8.6 0.22 1N5348B 11 125 2.5 5.0 8.0 8.4 430 125 8.0 0.25 1N5349B 12 100 2.5 2.0 8.6 9.1 395 125 7.5 0.25 1N5350B 13 100 2.5 1.0 9.4 9.9 365 100 7.0 0.25 1N5351B 14 100 2.5 1.0 10.1 10.6 340 75 6.7 0.25 1N5352B 15 75 2.5 1.0 10.8 11.5 315 75 6.3 0.25 1N5353B 16 75 2.5 1.0 11.5 12.2 295 75 6.0 0.30 1N5354B 17 70 2.5 0.5 12.2 12.9 280 75 5.8 0.35 1N5355B 18 65 2.5 0.5 13 13.7 264 75 5.5 0.40 1N5356B 19 65 3.0 0.5 13.7 14.4 250 75 5.3 0.40 1N5357B 20 65 3.0 0.5 14.4 15.2 237 75 5.1 0.40 1N5358B 22 50 3.5 0.5 15.8 16.7 216 75 4.7 0.45 1N5359B 24 50 3.5 0.5 17.3 18.2 198 100 4.4 0.55 1N5360B 25 50 4.0 0.5 18 19 190 110 4.3 0.55 1N5361B 27 50 5.0 0.5 19.4 20.6 176 120 4.1 0.60 1N5362B 28 50 6.0 0.5 20.1 21.2 170 130 3.9 0.60 1N5363B 30 40 8.0 0.5 21.6 22.8 158 140 3.7 0.60 1N5364B 33 40 10 0.5 23.8 25.1 144 150 3.5 0.60 1N5365B 36 30 11 0.5 25.9 27.4 132 160 3.3 0.65 1N5366B 39 30 14 0.5 28.1 29.7 122 170 3.1 0.65 1N5367B 43 30 20 0.5 31 32.7 110 190 2.8 0.70 1N5368B 47 25 25 0.5 33.8 35.8 100 210 2.7 0.80 1N5369B 51 25 27 0.5 36.7 38.8 93 230 2.5 0.90 1N5370B 56 20 35 0.5 40.3 42.6 86 280 2.3 1.00 1N5371B 60 20 40 0.5 43 45.5 79 350 2.2 1.20 1N5372B 62 20 42 0.5 44.6 47.1 76 400 2.1 1.35 1N5373B 68 20 44 0.5 49 51.7 70 500 2.0 1.50 1N5374B 75 20 45 0.5 54 56 63 620 1.9 1.60 1N5375B 82 15 65 0.5 59 62.2 58 720 1.8 1.80 1N5376B 87 15 75 0.5 63 66 54.5 760 1.7 2.00 1N5377B 91 15 75 0.5 65.5 69.2 52.5 760 1.6 2.20 1N5378B 100 12 90 0.5 72 76 47.5 800 1.5 2.30 1N5379B 110 12 125 0.5 79.2 83.6 43 1000 1.4 2.50 1N5380B 120 10 170 0.5 86.4 91.2 39.5 1150 1.3 2.50 1N5381B 130 10 190 0.5 93.6 98.8 36.6 1250 1.2 2.50 1N5382B 140 8.0 230 0.5 101 106 34 1500 1.2 2.50 1N5383B 150 8.0 330 0.5 108 114 31.6 1500 1.1 3.00 1N5384B 160 8.0 350 0.5 115 122 29.4 1650 1.1 3.00 1N5385B 170 8.0 380 0.5 122 129 28 1750 1.0 3.00 1N5386B 180 5.0 430 0.5 130 137 26.4 1750 1.0 4.00 1 1N5387B 190 5.0 450 0.5 137 144 25 1850 0.9 5.00 N 1N5388B 200 5.0 480 0.5 144 152 23.6 1850 0.9 5.00 5 *JEDEC Registered Data. 3 3 NOTE 1: Devices listed above with B suffix have ±5% tolerance, A suffix designates ±10% tolerance, C suffix designates ±2% 3 B tolerance, and D suffix designates ±1% tolerance. No suffix designates ±20%. NOTE 2: Zener voltage (Vz) is measured at TL = 25oC (+8, -2oC). Voltage measurement performed at 40 ±10 milliseconds th after application of dc current. ru NOTE 3: The zener impedance is derived from 1 kHz ac voltage resulting from an ac current modulation having an rms value 1 equal to 10% of the dc zener current (I or I ) superimposed on I or I . See Micro Note 202 for zener impedance N ZT ZK ZT ZK 5 variation with different operating currents. 3 NOTE 4: The maximum current (IZM) shown is for a ±5% tolerance devices. The IZM for other tolerances can be calculated using 88 the formula: I = P/V where V is the V at the high end of the voltage tolerance specified and P is the rated power B ZM ZM ZM Z for the method of mounting. , e NOTE 5: The surge current (I ) is specified as the maximum peak of a non-recurrent half-sine wave of 8.3 ms duration. 3 ZSM NOTE 6: Voltage regulation (ΔV ) is the difference between the voltage measured at 10% and 50% of I . Z ZM Copyright © 2008 Microsemi Page 2 8-06-2008 REV D Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION OUTLINE AND CIRCUIT W W W . M ic r o s e m Power Watts) T L i .CO um n ( M mo xiati ap Msi d, Dis P T on FR4 A PC board T, Lead temperature (oC) 3/8” from body. or L T ambient temperature on FR4 PC Board A FIGURE 1 FIGURE 2 Power Derating Curve Typical Capacitance vs. Reverse Voltage for 5 Watt Zeners PACKAGE DIMENSIONS 1 N 5 3 3 3 B t h r u 1 N 5 3 8 8 B T y p i c a Fl ICGaUpRacEit a3n c e v s . , e3 Reverse Voltage for 5 Watt Zeners Copyright © 2008 Microsemi Page 3 8-06-2008 REV D Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503