ICGOO在线商城 > 分立半导体产品 > 二极管 - 齐纳 - 单 > 1N5237B-TR
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1N5237B-TR产品简介:
ICGOO电子元器件商城为您提供1N5237B-TR由Vishay设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 1N5237B-TR价格参考。Vishay1N5237B-TR封装/规格:二极管 - 齐纳 - 单, Zener Diode 8.2V 500mW ±5% Through Hole DO-35。您可以下载1N5237B-TR参考资料、Datasheet数据手册功能说明书,资料中有1N5237B-TR 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE ZENER 8.2V 500MW DO35稳压二极管 8.2 Volt 0.5 Watt |
产品分类 | 单二极管/齐纳分离式半导体 |
品牌 | Vishay SemiconductorsVishay Semiconductor Diodes Division |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,稳压二极管,Vishay Semiconductors 1N5237B-TR- |
数据手册 | |
产品型号 | 1N5237B-TR1N5237B-TR |
不同If时的电压-正向(Vf) | 1.1V @ 200mA |
不同 Vr时的电流-反向漏电流 | 3µA @ 6.5V |
产品种类 | |
供应商器件封装 | DO-35 |
其它名称 | 1N5237BVSCT |
功率-最大值 | 500mW |
功率耗散 | 500 mW |
包装 | 剪切带 (CT) |
商标 | Vishay Semiconductors |
安装类型 | 通孔 |
安装风格 | Through Hole |
容差 | ±5% |
封装 | Reel |
封装/外壳 | DO-204AH,DO-35,轴向 |
封装/箱体 | DO-35 |
工作温度 | - |
工厂包装数量 | 10000 |
最大反向漏泄电流 | 3 uA |
最大工作温度 | + 175 C |
最大齐纳阻抗 | 8 Ohms |
最小工作温度 | - 65 C |
标准包装 | 1 |
电压-齐纳(标称值)(Vz) | 8.2V |
电压容差 | 5 % |
电压温度系数 | 0.062 %/K |
系列 | 1N52xxB |
配置 | Single |
阻抗(最大值)(Zzt) | 8 欧姆 |
齐纳电压 | 8.2 V |
齐纳电流 | 20 mA |
1N5221 to 1N5267 www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes • Standard Zener voltage tolerance is ± 5 % with a “B” suffix in the ordering code (e.g.: 1N5221B), suffix “C” is ± 2 % tolerance • These diodes are also available in MiniMELF case with the type designation TZM5221 to TZM5267, SOT-23 case with the type designations MMBZ5225 to MMBZ5267 and SOD-123 case with the types designations MMSZ5225 to MMSZ5267 • AEC-Q101 qualified PRIMARY CHARACTERISTICS • Material categorization: for definitions of compliance PARAMETER VALUE UNIT please see www.vishay.com/doc?99912 V range nom. 2.4 to 75 V Z APPLICATIONS Test current I 1.7 to 20 mA ZT • Voltage stabilization V specification Thermal equilibrium Z Int. construction Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 1N5221B to 1N5267B 1N5221B to 1N5267B-series-TR 10 000 per 13" reel 1N5221C to 1N5267C 1N5221C to 1N5267C-series-TR 30 000/box 1N5221B to 1N5267B 1N5221B to 1N5267B-series-TAP 10 000 per ammopack (52 mm tape) 1N5221C to 1N5267C 1N5221C to 1N5267C-series-TAP PACKAGE MOLDING COMPOUND MOISTURE SENSITIVITY SOLDERING PACKAGE NAME WEIGHT FLAMMABILITY RATING LEVEL CONDITIONS MSL level 1 DO-35 125 mg UL 94 V-0 260 °C/10 s at terminals (according J-STD-020) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation TL 25 °C Ptot 500 mW Zener current I P /V mA Z tot Z Thermal resistance junction to ambient air I = 4 mm, T = constant R 300 K/W L thJA Junction temperature Tj 175 °C Storage temperature range Tstg -65 to +175 °C Forward voltage (max.) I = 200 mA V 1.1 V F F Rev. 2.1, 08-Sep-14 1 Document Number: 85588 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5221 to 1N5267 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb REVERSE ZENER VOLTAGE DYNAMIC RESISTANCE TEMPERATURE TEST CURRENT LEAKAGE RANGE (1) f = 1 kHz COEFFICIENT CURRENT PART NUMBER VZ at IZT1 IZT1 IZT2 IR at VR ZZ at IZT1 (1) ZZK at IZT2 VZ V mA μA V %/K NOM. MAX. MAX. MAX. TYP. 1N5221 2.4 20 0.25 100 1 30 1200 - 0.085 1N5222 2.5 20 0.25 100 1 30 1250 - 0.085 1N5223 2.7 20 0.25 75 1 30 1300 - 0.08 1N5224 2.8 20 0.25 75 1 30 1400 - 0.08 1N5225 3 20 0.25 50 1 29 1600 - 0.075 1N5226 3.3 20 0.25 25 1 28 1600 - 0.07 1N5227 3.6 20 0.25 15 1 24 1700 - 0.065 1N5228 3.9 20 0.25 10 1 23 1900 - 0.06 1N5229 4.3 20 0.25 5 1 22 2000 0.055 1N5230 4.7 20 0.25 5 2 19 1900 0.03 1N5231 5.1 20 0.25 5 2 17 1600 0.03 1N5232 5.6 20 0.25 5 3 11 1600 0.038 1N5233 6 20 0.25 5 3.5 7 1600 0.038 1N5234 6.2 20 0.25 5 4 7 1000 0.045 1N5235 6.8 20 0.25 3 5 5 750 0.05 1N5236 7.5 20 0.25 3 6 6 500 0.058 1N5237 8.2 20 0.25 3 6.5 8 500 0.062 1N5238 8.7 20 0.25 3 6.5 8 600 0.065 1N5239 9.1 20 0.25 3 7 10 600 0.068 1N5240 10 20 0.25 3 8 17 600 0.075 1N5241 11 20 0.25 2 8.4 22 600 0.076 1N5242 12 20 0.25 1 9.1 30 600 0.077 1N5243 13 9.5 0.25 0.5 9.9 13 600 0.079 1N5244 14 9 0.25 0.1 10 15 600 0.082 1N5245 15 8.5 0.25 0.1 11 16 600 0.082 1N5246 16 7.8 0.25 0.1 12 17 600 0.083 1N5247 17 7.4 0.25 0.1 13 19 600 0.084 1N5248 18 7 0.25 0.1 14 21 600 0.085 1N5249 19 6.6 0.25 0.1 14 23 600 0.086 1N5250 20 6.2 0.25 0.1 15 25 600 0.086 1N5251 22 5.6 0.25 0.1 17 29 600 0.087 1N5252 24 5.2 0.25 0.1 18 33 600 0.088 1N5253 25 5 0.25 0.1 19 35 600 0.089 1N5254 27 4.6 0.25 0.1 21 41 600 0.09 1N5255 28 4.5 0.25 0.1 21 44 600 0.091 1N5256 30 4.2 0.25 0.1 23 49 600 0.091 1N5257 33 3.8 0.25 0.1 25 58 700 0.092 1N5258 36 3.4 0.25 0.1 27 70 700 0.093 1N5259 39 3.2 0.25 0.1 30 80 800 0.094 1N5260 43 3 0.25 0.1 33 93 900 0.095 1N5261 47 2.7 0.25 0.1 36 105 1000 0.095 1N5262 51 2.5 0.25 0.1 39 125 1100 0.096 1N5263 56 2.2 0.25 0.1 43 150 1300 0.096 1N5264 60 2.1 0.25 0.1 46 170 1400 0.097 1N5265 62 2 0.25 0.1 47 185 1400 0.097 1N5266 68 1.8 0.25 0.1 52 230 1600 0.097 1N5267 75 1.7 0.25 0.1 56 270 1700 0.098 Note (1) Based on DC measurement at thermal equilibrium; lead length = 9.5 (3/8"); thermal resistance of heat sink = 30 K/W Rev. 2.1, 08-Sep-14 2 Document Number: 85588 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5221 to 1N5267 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb W) 500 600 K/ W) bient ( 400 on (m 500 Am pati 400 Junction 300 l l wer Dissi 300 st. 200 Po 200 Therm. Resi 1000 TL = constant P - Total tot 1000 - A 0 5 10 15 20 0 40 80 120 160 200 RthJ I - Lead Length (mm) 95 9611 95 9602 Tamb - Ambient Temperature (°C) Fig. 1 - Thermal Resistance vs. Lead Length Fig. 4 - Total Power Dissipation vs. Ambient Temperature 1000 15 nt e mV) effici 10 ge Change ( 100 IZ = 5 mA perature Co-4V (10/K)Z 5 V - VoltaZ 10 K - TemVZof 0 IZ = 5 mA T 1 - 5 0 5 10 15 20 25 0 10 20 30 40 50 95 9598 VZ - Z-Voltage (V) 95 9600 VZ - Z-Voltage (V) Fig. 2 - Typical Change of Working Voltage under Operating Fig. 5 - Temperature Coefficient of V vs. Z-Voltage Z Conditions at T = 25 °C amb 1.3 200 ge VZtn = VZt/VZ (25 °C) F) e Voltage Chan 11..12 TKVZ = 10 x 10-4/K 8246 xxxx 11110000----4444////KKKK Capacitance (p 110500 TVj R= =2 52 °VC Relativ 1.0 - 2 0x 10-4/K Diode 50 - n 0.9 - 4 x 10-4/K - D Zt C V 0.8 0 - 60 0 60 120 180 240 0 5 10 15 20 25 95 9599 Tj - Junction Temperature (°C) 95 9601 VZ - Z-Voltage (V) Fig. 3 - Typical Change of Working Voltage vs. Fig. 6 - Diode Capacitance vs. Z-Voltage Junction Temperature Rev. 2.1, 08-Sep-14 3 Document Number: 85588 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5221 to 1N5267 www.vishay.com Vishay Semiconductors 100 50 A) 10 40 Ptot = 500 mW m T = 25 °C urrent ( 1 Tj = 25 °C nt (mA) 30 amb C e d urr ar 0.1 C 20 w Z- For - Z - F 0.01 I 10 I 0.001 0 0 0.2 0.4 0.6 0.8 1.0 15 20 25 30 35 959605 VF - Forward Voltage (V) 95 9607 VZ - Z-Voltage (V) Fig. 7 - Forward Current vs. Forward Voltage Fig. 9 - Z-Current vs. Z-Voltage 100 1000 Ω) 80 e ( c I = 1 mA A) Ptot = 500 mW an Z nt (m 60 Tamb = 25 °C Resist 100 Curre 40 al Z- 5 mA Z- nti 10 10 mA - Z ere I 20 Diff 0 r - Z 1 Tj = 25 °C 0 4 6 8 12 20 0 5 10 15 20 25 95 9604 VZ - Z-Voltage (V) 95 9606 VZ - Z-Voltage (V) Fig. 8 - Z-Current vs. Z-Voltage Fig. 10 - Differential Z-Resistance vs. Z-Voltage W) 1000 K/ d. ( n o C t/T = 0.5 e p Puls 100 tp/T = 0.2 or e f Single Pulse R = 300 K/W c thJA sistan 10 tp/T = 0.01 T = Tj max. - Tamb Re tp/T = 0.1 tp/T = 0.02 al m tp/T = 0.05 i = (- V + (V 2 + 4r x T/Z ) 1/2)/(2r ) er ZM Z Z zj thp zj Th 1 - p 10-1 100 101 102 h Zt t - Pulse Length (ms) 95 9603 p Fig. 11 - Thermal Response Rev. 2.1, 08-Sep-14 4 Document Number: 85588 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5221 to 1N5267 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): DO-35_1N52xx Cathode Identification 2] 55 max. [0.02 4 min. [0.015] 26 min. [1.024] 33..91 mmainx.. [[00..112504]] 26 min. [1.024] 1.7 [0.067] 1.5 [0.059] 0. 0. Ø Ø Rev. 1 - Date: 19. December 2011 Document no.: S8-V-3906.04-031(4) 94 12648 Rev. 2.1, 08-Sep-14 5 Document Number: 85588 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: 1N5248B\D7 1N5249B\D7 1N5247B\D7 1N5256B\D7 1N5258B\D7 1N5253B\D7 1N5257B\D7 1N5255B\D7 1N5259B\D7 1N5251B\D7 1N5239B\D7 1N5235B\D7 1N5264B\D7 1N5260B\D7 1N5266B\D7 1N5227C-TAP 1N5267C-TAP 1N5247C-TAP 1N5237C-TAP 1N5257C-TAP 1N5266B-TAP 1N5226B-TAP 1N5246B-TAP 1N5236B-TAP 1N5256B-TAP 1N5244B-TAP 1N5224B-TAP 1N5264B-TAP 1N5254B-TAP 1N5234B-TAP 1N5245C-TAP 1N5265C-TAP 1N5225C-TAP 1N5255C-TAP 1N5235C-TAP 1N5240B-TAP 1N5260B-TAP 1N5250B-TAP 1N5230B-TAP 1N5248C-TAP 1N5228C-TAP 1N5258C-TAP 1N5238C-TAP 1N5241C-TAP 1N5221C-TAP 1N5261C-TAP 1N5251C-TAP 1N5231C-TAP 1N5234C-TAP 1N5254C-TAP 1N5244C-TAP 1N5224C-TAP 1N5264C-TAP 1N5237B-TAP 1N5257B-TAP 1N5247B-TAP 1N5267B-TAP 1N5227B-TAP 1N5252B-TAP 1N5232B-TAP 1N5222B-TAP 1N5262B-TAP 1N5242B-TAP 1N5251B-TAP 1N5231B-TAP 1N5221B-TAP 1N5261B-TAP 1N5241B-TAP 1N5229B-TAP 1N5249B-TAP 1N5239B-TAP 1N5259B-TAP 1N5253C-TAP 1N5233C-TAP 1N5263C-TAP 1N5223C-TAP 1N5243C-TAP 1N5256C-TAP 1N5236C-TAP 1N5266C-TAP 1N5226C-TAP 1N5246C-TAP 1N5265B-TAP 1N5225B-TAP 1N5245B-TAP 1N5235B-TAP 1N5255B-TAP 1N5260C-TAP 1N5240C-TAP 1N5230C-TAP 1N5250C-TAP 1N5263B-TAP 1N5223B-TAP 1N5243B-TAP 1N5233B-TAP 1N5253B-TAP 1N5242C-TAP 1N5222C-TAP 1N5262C-TAP 1N5252C-TAP